JPH0419634B2 - - Google Patents
Info
- Publication number
- JPH0419634B2 JPH0419634B2 JP58118342A JP11834283A JPH0419634B2 JP H0419634 B2 JPH0419634 B2 JP H0419634B2 JP 58118342 A JP58118342 A JP 58118342A JP 11834283 A JP11834283 A JP 11834283A JP H0419634 B2 JPH0419634 B2 JP H0419634B2
- Authority
- JP
- Japan
- Prior art keywords
- word line
- address decoder
- circuit
- word lines
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000007667 floating Methods 0.000 abstract description 12
- 230000008878 coupling Effects 0.000 abstract description 9
- 238000010168 coupling process Methods 0.000 abstract description 9
- 238000005859 coupling reaction Methods 0.000 abstract description 9
- HCUOEKSZWPGJIM-YBRHCDHNSA-N (e,2e)-2-hydroxyimino-6-methoxy-4-methyl-5-nitrohex-3-enamide Chemical compound COCC([N+]([O-])=O)\C(C)=C\C(=N/O)\C(N)=O HCUOEKSZWPGJIM-YBRHCDHNSA-N 0.000 abstract description 7
- 101001109689 Homo sapiens Nuclear receptor subfamily 4 group A member 3 Proteins 0.000 abstract description 7
- 101000598778 Homo sapiens Protein OSCP1 Proteins 0.000 abstract description 7
- 101001067395 Mus musculus Phospholipid scramblase 1 Proteins 0.000 abstract description 7
- 102100022673 Nuclear receptor subfamily 4 group A member 3 Human genes 0.000 abstract description 7
- 230000000295 complement effect Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58118342A JPS6013395A (ja) | 1983-07-01 | 1983-07-01 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58118342A JPS6013395A (ja) | 1983-07-01 | 1983-07-01 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6013395A JPS6013395A (ja) | 1985-01-23 |
| JPH0419634B2 true JPH0419634B2 (enrdf_load_stackoverflow) | 1992-03-31 |
Family
ID=14734304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58118342A Granted JPS6013395A (ja) | 1983-07-01 | 1983-07-01 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6013395A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5161121A (en) * | 1988-06-27 | 1992-11-03 | Oki Electric Industry Co., Ltd. | Random access memory including word line clamping circuits |
-
1983
- 1983-07-01 JP JP58118342A patent/JPS6013395A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6013395A (ja) | 1985-01-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5276649A (en) | Dynamic-type semiconductor memory device having staggered activation of column groups | |
| US4636982A (en) | Semiconductor memory device | |
| KR950014559B1 (ko) | 반도체 기억장치 | |
| USRE37176E1 (en) | Semiconductor memory | |
| JPS60234298A (ja) | 半導体集積回路装置 | |
| US7307901B2 (en) | Apparatus and method for improving dynamic refresh in a memory device | |
| US6108233A (en) | Ultra low voltage static RAM memory cell | |
| US4602355A (en) | Memory circuit with noise preventing means for word lines | |
| US5886553A (en) | Semiconductor device having a latch circuit for latching data externally input | |
| TWI654616B (zh) | 輸入緩衝電路 | |
| EP1143453B1 (en) | Semiconductor memory device | |
| US6570799B1 (en) | Precharge and reference voltage technique for dynamic random access memories | |
| JPS62223891A (ja) | 半導体記憶装置 | |
| US6111805A (en) | Power-on-reset circuit for generating a reset signal to reset a DRAM | |
| CN111312311A (zh) | 用于减少写入上拉时间的设备和使用方法 | |
| US6137715A (en) | Static random access memory with rewriting circuit | |
| JPH0419634B2 (enrdf_load_stackoverflow) | ||
| JP3238806B2 (ja) | 半導体記憶装置 | |
| US5936904A (en) | Device and process for reading/rewriting a dynamic random access memory cell | |
| TWI889299B (zh) | 記憶體裝置及其操作方法 | |
| JPH0551992B2 (enrdf_load_stackoverflow) | ||
| JPS6013396A (ja) | ダイナミツク型ｒａｍ | |
| JPS61217989A (ja) | 半導体記憶装置 | |
| JPH0542757B2 (enrdf_load_stackoverflow) | ||
| JPS59152589A (ja) | ダイナミツク型ｒａｍ |