JPH04173841A - Method for partially forming polymer membrane having functional group - Google Patents

Method for partially forming polymer membrane having functional group

Info

Publication number
JPH04173841A
JPH04173841A JP2299290A JP29929090A JPH04173841A JP H04173841 A JPH04173841 A JP H04173841A JP 2299290 A JP2299290 A JP 2299290A JP 29929090 A JP29929090 A JP 29929090A JP H04173841 A JPH04173841 A JP H04173841A
Authority
JP
Japan
Prior art keywords
substrate
film
polymer
polymer film
functional group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2299290A
Other languages
Japanese (ja)
Inventor
Shigeyuki Miyamoto
重幸 宮本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2299290A priority Critical patent/JPH04173841A/en
Publication of JPH04173841A publication Critical patent/JPH04173841A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To produce an ion sensor, enzyme sensor, etc., by forming a hydrophobic part on the surface of a substrate for forming a polymer membrane, applying a solution of a polymeric compound having high affinity to the substrate and forming the polymer compound membrane on the substrate., CONSTITUTION:A part of the surface of a substrate on which a polymer membrane is to be formed is treated in such a manner as to make the part to be hydrophobic compared with the other part of the substrate. The substrate is coated with a solution of a polymer compound having functional group and high affinity to the hydrophobic part. A polymer membrane having functional group can be formed on a part of the substrate by forming a membrane of the polymer compound on the hydrophobic part by this process.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、機能性を備えた官能基を有する高分子膜の部
分的形成方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for partially forming a polymer membrane having functional groups with functionality.

(従来の技術) 近年、工業的に有用な機能を備えた官能基を有する高分
子化合物が数多く合成されている。正や負の電荷を持つ
官能基をはじめとして、特定のイオンに対してのみ親和
性の高いイオノフオア、特定の化学反応を触媒する金属
錯体などが機能性基として高分子鎖に導入されている。
(Prior Art) In recent years, many polymer compounds having functional groups with industrially useful functions have been synthesized. In addition to functional groups with positive or negative charges, ionophores that have a high affinity for specific ions, and metal complexes that catalyze specific chemical reactions are introduced into polymer chains as functional groups.

例えば、ポリビニルピリジンのルテニウム、鉄、銅錯体
は、電気化学的活性を示す(高分子機能電極、p、41
、学会出版センター、1983年)。また、アミノ基や
カルボキシル基、アルデヒド基などの反応性基を有する
高分子化合物は、酵素、微生物、抗原、抗体のための優
れた固定化担体として利用されている。以上に挙げたよ
うな、機能性を備えた高分子化合物は、電極表面や光フ
ァイバーに塗布することによってイオンセンサやバイオ
センサに応用されている。また、酵素免疫分析法に用い
られるマイクロプレートや細胞培養用プレートは、抗体
や細胞の固定を促進するために、その表面を疎水性や正
に荷電した高分子化合物によって処理されている。
For example, ruthenium, iron, and copper complexes of polyvinylpyridine exhibit electrochemical activity (Polymer Functional Electrodes, p. 41
, Gakkai Publishing Center, 1983). Furthermore, polymer compounds having reactive groups such as amino groups, carboxyl groups, and aldehyde groups are used as excellent immobilization carriers for enzymes, microorganisms, antigens, and antibodies. The functional polymer compounds listed above are applied to ion sensors and biosensors by coating them on electrode surfaces and optical fibers. Furthermore, the surfaces of microplates and cell culture plates used in enzyme immunoassay are treated with hydrophobic or positively charged polymer compounds in order to promote immobilization of antibodies and cells.

一方、イオンセンサやバイオセンサを微小化する試みが
盛んに進められている。微小センサの作製には、微小な
センサの感応部に機能性膜を正確に均一に形成する技術
が不可欠である。アクリル樹脂、エポキシ樹脂、フッ素
樹脂、シリコーン樹脂をイオン感受性電界効果型トラン
ジスタ(ISFET)の感応部に成膜して参照電極を作
製する試みがなされているが(第49回応用惣理学会講
演予稿集、p。
On the other hand, attempts to miniaturize ion sensors and biosensors are actively underway. In the production of microsensors, a technique for accurately and uniformly forming a functional film on the sensitive part of a microsensor is essential. Attempts have been made to fabricate reference electrodes by depositing acrylic resins, epoxy resins, fluorine resins, and silicone resins on the sensitive part of ion-sensitive field effect transistors (ISFETs). Collection, p.

385)、微小なセンサの感応部だけに膜を作製するに
は至っていない。固定化酵素膜の形成に関しては、この
技術はl5FETを利用したバイオセンサ製造において
実現されている。例えば特公昭61−88135号公報
参照(特願昭59−209165号)。これは、半導体
製造技術であるフォトリソグラフィー法を用い、固定化
酵素膜を形成したい表面の一部分だけを露出させた基板
に、酵素と架橋剤を含んだタンパク質溶液を展開、回転
させ、最後にフォトレジストを溶解して所定の表面以外
の固定化酵素膜を除去する工程からなる。
385), it has not yet been possible to fabricate a film only on the sensitive part of a minute sensor. Regarding the formation of immobilized enzyme membranes, this technology has been realized in biosensor fabrication using 15FET. For example, see Japanese Patent Publication No. 61-88135 (Japanese Patent Application No. 59-209165). This method uses photolithography, a semiconductor manufacturing technology, to spread a protein solution containing an enzyme and a crosslinking agent onto a substrate that exposes only a portion of the surface on which an immobilized enzyme film is to be formed, rotate it, and finally photophotograph it. This process consists of dissolving the resist and removing the immobilized enzyme film on areas other than the predetermined surface.

(発明が解決しようとする課題) 有用な機能をもった官能基を側鎖にもった高分子化合物
の膜の場合、固定化酵素膜とは溶媒溶解性、安定性、物
理的強度等の性質が異なるため、固定化酵素膜の形成法
と同様の方法では微小な任意の寸法の膜を形成すること
は不可能であり、そのため、このような高分子化合物を
利用した、イオンセンサなとデバイスの微小化は困難で
あった。同様の理由で、酵素、抗体、細胞に対して優れ
た親和性を備え、優れた機能を持った官能基を有する高
分子化合物を、酵素センサや酵素免疫分析用プレート、
細胞培養用プレートなどに応用することは困難であった
(Problem to be solved by the invention) In the case of a membrane made of a polymer compound having a functional group with a useful function in its side chain, an immobilized enzyme membrane is characterized by properties such as solvent solubility, stability, and physical strength. Therefore, it is impossible to form microscopic membranes of arbitrary dimensions using a method similar to the method used to form immobilized enzyme membranes.Therefore, ion sensors and devices using such polymeric compounds are required. miniaturization was difficult. For the same reason, polymer compounds with functional groups that have excellent affinity for enzymes, antibodies, and cells and have excellent functions are used for enzyme sensors, enzyme immunoassay plates, etc.
It was difficult to apply it to cell culture plates, etc.

本発明の目的は、有用な機能を備えた官能基を有する高
分子化合物の膜を基板表面の任意の位置と寸法で設ける
ための方法を提供することにある。
An object of the present invention is to provide a method for providing a film of a polymer compound having a functional group with a useful function at an arbitrary position and size on a substrate surface.

(課題を解決するための手段) 本発明の機能性基を有する高分子膜の部分的形成方法は
、基板表面の一部に機能性基を有する高分子膜を形成す
る方法において、高分子膜の形成を所望する基板表面の
一部分を他の部分に比して疎水性になるように表面を処
理する工程と、省該基板に機能性基を有しかつ疎水処理
した部分との親和性が高い高分子化合物の溶液を塗布し
て、疎水性に処理した部分に高分子化合物の膜を形成す
る工程とを備えたことを特徴とする。
(Means for Solving the Problems) The method for partially forming a polymer film having a functional group of the present invention is a method for forming a polymer film having a functional group on a part of a substrate surface. A process of treating a part of the surface of the substrate where it is desired to be formed to make it more hydrophobic than other parts, and a step of treating the surface of the substrate so that it becomes more hydrophobic than other parts, and a process of treating the surface of the substrate to make it more hydrophobic than other parts, and to make the part of the substrate that has a functional group and has an affinity with the hydrophobically treated part. The method is characterized by comprising a step of applying a solution of a high molecular compound to form a film of the high molecular compound on the hydrophobically treated portion.

または基板表面の一部に機能性基を有する高分子膜を形
成する方法において、基板の表面全体に機能性基を有す
る単量体の膜を形成する工程と、高分子膜の形成を所望
する当該基板表面の一部分に紫外線を照射し単量体を重
合せしめて、高分子膜を形成する工程と、当該基板を単
量体のみを溶解する溶媒で洗浄してこれを取り除く工程
とを備えたことを特徴とする。
Or, in a method of forming a polymer film having a functional group on a part of the surface of a substrate, a step of forming a film of a monomer having a functional group on the entire surface of the substrate, and forming a polymer film is desired. A step of irradiating a portion of the surface of the substrate with ultraviolet rays to polymerize monomers to form a polymer film, and a step of cleaning the substrate with a solvent that dissolves only the monomers to remove them. It is characterized by

または基板表面の一部に機能性基を有する高分子膜を形
成する方法において、基板の表面全体に機能性基を有す
る高分子化合物の膜を形成する工程と、当該基板にフォ
トレジストを塗布した後フォトリソグラフィー法により
高分子膜の形成を所望する表面のフォトレジストを除去
する工程と、プラズマエツチング法によって当該基板表
面の露出した高分子膜を除去する工程と、フォトレジス
トを除去する工程を備えることを特徴とする。
Or, in a method of forming a polymer film having a functional group on a part of the surface of a substrate, the step of forming a film of a polymer compound having a functional group on the entire surface of the substrate, and coating the substrate with a photoresist. A step of removing the photoresist on the surface on which a polymer film is desired to be formed by a post-photolithography method, a step of removing the exposed polymer film on the surface of the substrate by a plasma etching method, and a step of removing the photoresist. It is characterized by

または基板表面の一部に機能性基を有する高分子膜を形
成する方法において、基板にフォトレジストを塗布した
後フォトリソグラフィー法により高分子膜の形成を所望
する表面のフォトレジストを除去する工程と、当該基板
に機能性基を有する高分子化合物とアルブミンと架橋剤
を含む溶液を塗布する工程と、フォトレジストを溶解し
て所定の表面以外の高分子膜を除去することを特徴とす
る。
Alternatively, a method for forming a polymer film having a functional group on a part of the substrate surface includes a step of applying a photoresist to the substrate and then removing the photoresist on the surface on which the polymer film is desired to be formed using a photolithography method. , is characterized by a step of applying a solution containing a polymer compound having a functional group, albumin, and a crosslinking agent to the substrate, and dissolving the photoresist to remove the polymer film on areas other than a predetermined surface.

(作用) 基板上の、高分子膜を設けたい部分を予め疎水性処理を
施し、その後疎水性表面に対して親和性の高い高分子化
合物の溶液を塗布すると、疎水性表面の部分のみに高分
子化合物の膜を形成することができる。この場合、高分
子化合物には熱、光や酸、アルカリなどの化学物質を作
用させていないので、高分子化合物の機能性基部分の分
解、失活を起こすことなく任意の寸法の膜を作製するこ
とができる。
(Function) If you first perform hydrophobic treatment on the part of the substrate where you want to provide a polymer film, and then apply a solution of a polymer compound that has high affinity for the hydrophobic surface, the high molecular weight will be applied only to the part on the hydrophobic surface. Films of molecular compounds can be formed. In this case, since the polymer compound is not exposed to heat, light, acid, alkali, or other chemical substances, a film of any size can be produced without decomposing or deactivating the functional group portion of the polymer compound. can do.

また、基板に機能性基を有する単量体の膜を形成した後
、高分子膜を設けたい部分に紫外線を照射すると、紫外
線が照射した部分の単量体が重合して高分子膜となる。
In addition, after forming a film of monomers having functional groups on the substrate, when UV rays are irradiated to the part where the polymer film is to be provided, the monomers in the parts irradiated with UV rays polymerize and form a polymer film. .

この場合は、紫外線で重合反応が進む単量体であること
、機能性基部分が紫外線で分解されないことが必要であ
るが、上記の方法よりさらに精密な形状の膜を作製する
ことができる。
In this case, it is necessary that the monomer undergoes a polymerization reaction under ultraviolet light and that the functional group portion is not decomposed by ultraviolet light, but it is possible to produce a film with a more precise shape than the above method.

基板に機能性基を有する高分子膜を形成した後、高分子
膜を残したい部分だけをフォトレジストが覆うようにフ
ォトリソグラフィーによって処理して、プラズマエツチ
ングを施すと、フォトレジストの覆っていない部分はエ
ツチングされて基板表面が露出するので、フォトレジス
トを除去することによってやはり任意の寸法、形状の高
分子膜を得ることができる。
After forming a polymer film with functional groups on a substrate, photolithography is performed so that the photoresist covers only the areas where the polymer film is desired to remain, and plasma etching is performed to remove the areas not covered by the photoresist. Since the substrate surface is exposed by etching, a polymer film of any size and shape can be obtained by removing the photoresist.

フォトリソグラフィーによって高分子化合物を設けたい
部分の基板を露出させ、他の部分をフォトレジストで覆
った後、機能性基を有する高分子化合物とアルブミンと
架橋剤を含む溶液を塗布し、最後にフォトレジストを除
去すると、所望の部分のみに、機能性基を有する高分子
化合物を含むアルブミン架橋膜が形成される。この方法
は、特に水溶性の高分子化合物の場合に有効で、生体適
合性に優れた膜を作製することが可能であるので、バイ
オセンサや細胞培養用プレートなどへの応用に適してい
る。
After exposing the parts of the substrate where the polymer compound is to be provided by photolithography and covering the other parts with photoresist, a solution containing a polymer compound having a functional group, albumin, and a crosslinking agent is applied, and finally photo-coating is applied. When the resist is removed, an albumin crosslinked film containing a polymer compound having a functional group is formed only in desired areas. This method is particularly effective in the case of water-soluble polymer compounds, and it is possible to produce membranes with excellent biocompatibility, so it is suitable for application to biosensors, cell culture plates, etc.

(実施例) 本発明の実施例図面を用いて説明する。(Example) Embodiments of the present invention will be explained using drawings.

実施例1 第1図(a)〜(C)は、本発明の請求項1に示した、
機能性基を有する高分子膜の部分的形成方法の一実施例
の製作工程を説明するための断面図である。
Example 1 FIGS. 1(a) to (C) are shown in claim 1 of the present invention,
FIG. 3 is a cross-sectional view for explaining the manufacturing process of an example of a method for partially forming a polymer film having functional groups.

作製工程を順に説明する。第1図(a)のように清浄な
サファイア基板1の表面に疎水性を有するフォトレジス
ト膜2(東京応化製0MR83)をスピン塗布した。
The manufacturing process will be explained in order. As shown in FIG. 1(a), a hydrophobic photoresist film 2 (0MR83 manufactured by Tokyo Ohka Chemical Co., Ltd.) was spin-coated on the surface of a clean sapphire substrate 1.

次に第1図(b)のようにフォトマスクを用いて露光、
現、像処理をおこない、高分子膜を塗布したい部分以外
のフォトレジスト膜を除去した。イエハ150°Cで1
時間加熱処理した後、1%ポリビニルフェロセン(ポリ
サイエンス社製)のクロロベンゼン溶液をスピン塗布し
、室温で乾燥させた。ポリビニルフェロセンのクロロベ
ンゼン溶液からなる高分子膜3はフォトレジストのある
疎水的表面だけに残り、第1図(C)のように高分子膜
3がパターニングされた。
Next, as shown in FIG. 1(b), exposure using a photomask,
Image processing was then performed to remove the photoresist film from areas other than those to which the polymer film was to be applied. 1 at 150°C
After heat treatment for an hour, a chlorobenzene solution of 1% polyvinylferrocene (manufactured by Polyscience) was spin-coated and dried at room temperature. The polymer film 3 made of a chlorobenzene solution of polyvinylferrocene remained only on the hydrophobic surface of the photoresist, and the polymer film 3 was patterned as shown in FIG. 1(C).

この方法を用いることができる高分子化合物は、有機溶
媒に溶解する、ポリエチレン、ポリスチレンやその誘導
体が適している。また、ここで挙げた基板表面を疎水的
に処理する方法は疎水的なネガティブフォトレジスト膜
の塗布であったが、疎水的な膜であればポジデイプフォ
トレジスト、アルキル基を有する単分子膜、金属膜、金
属の酸化膜などでもよい。
Suitable polymer compounds that can be used in this method include polyethylene, polystyrene, and derivatives thereof, which are soluble in organic solvents. In addition, the method mentioned here to make the substrate surface hydrophobic was to apply a hydrophobic negative photoresist film, but if the film is hydrophobic, it can be applied using a positive deep photoresist or a monomolecular film containing an alkyl group. , a metal film, a metal oxide film, or the like.

実施例2 第2図(a)〜(c)は、本発明の請求項1の一実施例
の製作工程を説明するための断面図である。作製工程を
順に説明する。第2図(a)のように清浄なサファイア
基板1の表面にプルラン(和光純薬工業製、平均分子量
5〜10万)と重クロム酸カリウムを含む水溶液をスピ
ン塗布しプルラン膜4を形成した。次に、第2図(b)
のようにフォトマスクを用いて露光、現像処理をおこな
い、高分子膜を塗布したい部分のプルラン膜4を水洗し
除去した。次いで、1%ポリビニルフェロセンのクロロ
ベンゼン溶液をスピン塗布し、室温で乾燥させた。ポリ
ビニルフェロセンのクロロベンゼン溶液からなる高分子
膜3はプルラン膜4の塗布された親水的表面以外の部分
に残り、第2図(C)のように高分子膜3がパターニン
グされた。
Embodiment 2 FIGS. 2(a) to 2(c) are sectional views for explaining the manufacturing process of an embodiment of claim 1 of the present invention. The manufacturing process will be explained in order. As shown in FIG. 2(a), a pullulan film 4 was formed by spin coating an aqueous solution containing pullulan (manufactured by Wako Pure Chemical Industries, Ltd., average molecular weight 50,000 to 100,000) and potassium dichromate on the surface of a clean sapphire substrate 1. . Next, Figure 2(b)
Exposure and development were performed using a photomask as described above, and the part of the pullulan film 4 on which the polymer film was to be applied was washed with water and removed. A 1% polyvinylferrocene solution in chlorobenzene was then spin applied and allowed to dry at room temperature. The polymer film 3 made of a chlorobenzene solution of polyvinylferrocene remained on the part of the pullulan film 4 other than the coated hydrophilic surface, and the polymer film 3 was patterned as shown in FIG. 2(C).

親水性膜としては、プルランのような多糖類などのゲル
膜が適しており、これらによって、基板表面の一部を親
水的に処理することで、高分子膜の形成を防ぐことがで
きる。親水性膜と、実施例1で挙げた疎水性膜を組み合
わせることによって、良好な高分子膜のパターニングが
可能であることは明らかである。
As the hydrophilic film, a gel film made of a polysaccharide such as pullulan is suitable, and by treating a portion of the substrate surface to be hydrophilic using these, it is possible to prevent the formation of a polymer film. It is clear that by combining the hydrophilic film and the hydrophobic film mentioned in Example 1, good patterning of the polymer film is possible.

実施例3 第3図(a)〜(C)は、請求項2の一実施例を説明す
るための製作工程断面図である。作製工程を順に説明す
る。第3図(a)のように清浄なサファイア基板1の表
面にp−スチレンスルホン酸ナトリウム水溶液をスピン
塗布し、乾燥させて単量体の膜5を形成した。次に、第
3図(b)のようにフォトマスクを用いて高分子膜を形
成したい部分に水銀ランプを20分間照射した。次いで
、第3図(c)のように基板全体を水洗してモノマー取
り除いて、パターニングされた高分子膜3を得た。
Embodiment 3 FIGS. 3(a) to 3(C) are sectional views of manufacturing steps for explaining an embodiment of claim 2. The manufacturing process will be explained in order. As shown in FIG. 3(a), a sodium p-styrene sulfonate aqueous solution was spin coated on the surface of a clean sapphire substrate 1 and dried to form a monomer film 5. Next, as shown in FIG. 3(b), a portion where a polymer film was to be formed was irradiated with a mercury lamp for 20 minutes using a photomask. Next, as shown in FIG. 3(c), the entire substrate was washed with water to remove the monomer, thereby obtaining a patterned polymer film 3.

この方法で作製できる高分子膜は、その単量体が紫外線
照射によって重合反応を起こす、ビニル基などの活性な
基を持っていればよい。これにより高分子膜ができる。
The polymer film that can be produced by this method only needs to have monomers that have active groups, such as vinyl groups, that cause a polymerization reaction when irradiated with ultraviolet rays. This creates a polymer membrane.

また、必要に応じて、増感剤や重合反応を促進する薬剤
を単量体に混入させてもよい。
Furthermore, if necessary, a sensitizer or a drug that promotes the polymerization reaction may be mixed into the monomer.

実施例4 第4図(a)〜(e)は、本発明の請求項3の一実施例
を説明するための断面図である。作製工程を順に説明す
る。第4図(a)のように清浄なサファイア基板1の表
面にポリスチレンスルホン酸(ポリサイエンス社製、分
子量50万)のベンゼン溶液からなる高分子膜3をスピ
ン塗布し、乾燥させた。次に、第4図(b)のようにフ
ォトレジスト膜7(シラプレー社製MP−1300−3
7)をスピン塗布し、フォトマスクを用いて露光、現像
処理をおこない、第4図(C)のように高分子膜3を取
り除きたい部分のフォトレジスト膜7を除去した。次に
第4図(d)のようにウェハを150°Cで1時間加熱
処理した後、0.1Torrの酸素中で13.56MH
z、200Wの高周波を2時間印加してエツチングを行
なった。最後に、残ったフォトレジストをアセトンで溶
解して取り除いて第4図(e)のように高分子膜3が形
成された。
Embodiment 4 FIGS. 4(a) to 4(e) are sectional views for explaining an embodiment of claim 3 of the present invention. The manufacturing process will be explained in order. As shown in FIG. 4(a), a polymer film 3 consisting of a benzene solution of polystyrene sulfonic acid (manufactured by Polyscience Co., Ltd., molecular weight: 500,000) was spin-coated on the surface of a clean sapphire substrate 1 and dried. Next, as shown in FIG.
7) was spin-coated, exposed to light using a photomask, and developed to remove the photoresist film 7 at the portion where the polymer film 3 was to be removed, as shown in FIG. 4(C). Next, as shown in FIG. 4(d), the wafer was heat-treated at 150°C for 1 hour, and then heated to 13.56MH in oxygen at 0.1 Torr.
Etching was performed by applying a high frequency wave of 200 W for 2 hours. Finally, the remaining photoresist was dissolved and removed with acetone to form a polymer film 3 as shown in FIG. 4(e).

ここで用いるフォトレジストは、プラズマエツチングの
過程で一部エッチングされるので、フォトレジストの厚
さは、高分子膜の厚さより10倍以上厚くした方がよい
Since the photoresist used here is partially etched during the plasma etching process, the thickness of the photoresist should preferably be at least 10 times thicker than the thickness of the polymer film.

実施例5 第5図(a)〜(d)は、本発明の請求項4の一実施例
を説明するための断面図である。作製工程を順に説明す
る。第5図(a)のように清浄なサファイア基板1の表
面にフォトレジスト膜7(シラプレー社製MP−130
0−37)をスピン塗布し、第5図(b)のようにフォ
トマスクを用いて露光、現像処理をおこない、高分子膜
を形成したい部分のフォトレジスト膜を除去した。1%
アミノプロピルトリエトキシシランによるプライマー処
理の後、第5図(C)のように1%ポリビニルアルコー
ル、15%牛血清アルブミン、1%グルタルアルデヒド
の水溶液をスピン塗布した。最後に、残ったフォトレジ
ストをアセトンで溶解して取り除き、第5図(d)のよ
うに高分子化合物を含むアルブミン膜(高分子膜)8が
形成された。
Embodiment 5 FIGS. 5(a) to 5(d) are sectional views for explaining an embodiment of claim 4 of the present invention. The manufacturing process will be explained in order. As shown in FIG. 5(a), a photoresist film 7 (MP-130 manufactured by Silapray Co., Ltd.) is coated on the surface of a clean sapphire substrate 1.
0-37) was spin-coated, exposed and developed using a photomask as shown in FIG. 5(b), and the photoresist film in the portion where the polymer film was to be formed was removed. 1%
After primer treatment with aminopropyltriethoxysilane, an aqueous solution of 1% polyvinyl alcohol, 15% bovine serum albumin, and 1% glutaraldehyde was spin-coated as shown in FIG. 5(C). Finally, the remaining photoresist was removed by dissolving it with acetone, and an albumin film (polymer film) 8 containing a polymer compound was formed as shown in FIG. 5(d).

この方法は、ポリアクリルアミド、カルボキシメチルセ
ルロース、ポリアミノ酸などの水溶性の高分子化合物に
対して特に有効であるが、水溶性ポリマーでなくとも、
分散してアルブミン膜内に導入することが可能である。
This method is particularly effective for water-soluble polymer compounds such as polyacrylamide, carboxymethylcellulose, and polyamino acids, but it can also be used for non-water-soluble polymers.
It is possible to disperse it and introduce it into the albumin membrane.

さらに、この方法で作製した高分子膜はアルブミン膜を
ベースとしているので、生体適合性に優れている。
Furthermore, since the polymer membrane produced by this method is based on an albumin membrane, it has excellent biocompatibility.

(発明の効果) 以上のように、高分子化合物の疎水性を利用する、単量
体を紫外線で重合させる、プラズマエツチングを用いて
高分子膜をパターニングする、またはアルブミン膜を利
用して高分子膜を形成する、などの方法を取ることによ
って、現在広く用いられている、有用な機能を持った官
能基をもった、種々の高分子化合物の膜を基板表面の任
意の位置と寸法で設けることが可能となった。特に、必
ずしも安定とはいえない高機能な高分子化合物を、微小
な部分にパターニングするこの方法は、微小なイオンセ
/す、酵素センサ、免疫分析用プレート、細胞培養用プ
レートなどの製造に応用することができる。
(Effects of the Invention) As described above, it is possible to pattern a polymer film using the hydrophobicity of a polymer compound, to polymerize a monomer with ultraviolet rays, to pattern a polymer film using plasma etching, or to pattern a polymer film using an albumin film. By taking methods such as forming a film, films of various polymer compounds having functional groups with useful functions, which are currently widely used, can be provided at arbitrary positions and dimensions on the substrate surface. It became possible. In particular, this method of patterning highly functional polymer compounds, which are not necessarily stable, into minute parts can be applied to the production of minute ion cells, enzyme sensors, immunoassay plates, cell culture plates, etc. be able to.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の第1の実施例を説明するための、製
作工程の断面図である。第2図は、本発明の第2の実施
例を説明するための、製作工程断面図である。第3図は
、本発明の第3の実施例を説明するための、製作工程断
面図である。第4図は、本発明の第4の実施例を説明す
るための、製作工程断面図である。第5図は、本発明の
第5の実施例を説明するための、製作工程断面図である
。図中1はサファイア基板、2は疎水性を有するフォト
レジスト、3は高分子膜、4はプルラン膜、5は単量体
の膜、6はフォトマスク、7はフォトレジスト、8は高
分子化合物を含むアルブミン膜である。
FIG. 1 is a sectional view of the manufacturing process for explaining the first embodiment of the present invention. FIG. 2 is a sectional view of the manufacturing process for explaining the second embodiment of the present invention. FIG. 3 is a sectional view of the manufacturing process for explaining the third embodiment of the present invention. FIG. 4 is a sectional view of the manufacturing process for explaining the fourth embodiment of the present invention. FIG. 5 is a sectional view of the manufacturing process for explaining the fifth embodiment of the present invention. In the figure, 1 is a sapphire substrate, 2 is a hydrophobic photoresist, 3 is a polymer film, 4 is a pullulan film, 5 is a monomer film, 6 is a photomask, 7 is a photoresist, and 8 is a polymer compound. It is an albumin membrane containing.

Claims (4)

【特許請求の範囲】[Claims] (1)基板表面の一部に機能性基を有する高分子膜を形
成する方法において、高分子膜の形成を所望する基板表
面の一部分を他の部分に比して疎水性になるように表面
を処理する工程と、当該基板に機能性基を有しかつ疎水
処理した部分との親和性が高い高分子化合物の溶液を塗
布して、疎水性に処理した部分に高分子化合物の膜を形
成する工程とを備えたことを特徴とする、機能性基を有
する高分子膜の部分的形成方法。
(1) In a method of forming a polymer film having a functional group on a part of the substrate surface, the surface of the substrate is made so that a part of the substrate surface on which the polymer film is desired to be formed is more hydrophobic than other parts. and coating the substrate with a solution of a polymer compound that has a functional group and has a high affinity with the hydrophobically treated area to form a film of the polymeric compound on the hydrophobically treated area. 1. A method for partially forming a polymer film having a functional group, comprising the steps of:
(2)基板表面の一部に機能性基を有する高分子膜を形
成する方法において、基板の表面全体に機能性基を有す
る単量体の膜を形成する工程と、高分子膜の形成を所望
する当該基板表面の一部分に紫外線を照射し単量体を重
合せしめて、高分子膜を形成する工程と、当該基板を単
量体のみを溶解する溶媒で洗浄してこれを取り除く工程
とを備えたことを特徴とする、機能性基を有する高分子
膜の部分的形成方法。
(2) A method for forming a polymer film having functional groups on a part of the substrate surface, which includes the step of forming a monomer film having functional groups on the entire surface of the substrate, and the formation of the polymer film. A step of irradiating a desired part of the surface of the substrate with ultraviolet rays to polymerize the monomers to form a polymer film, and a step of cleaning the substrate with a solvent that dissolves only the monomers to remove them. 1. A method for partially forming a polymer membrane having a functional group, characterized by comprising:
(3)基板表面の一部に機能性基を有する高分子膜を形
成する方法において、基板の表面全体に機能性基を有す
る高分子化合物の膜を形成する工程と、当該基板にフォ
トレジストを塗布した後フォトリソグラフィー法により
高分子膜の形成を所望する表面のフォトレジストを除去
する工程と、プラズマエッチング法によって当該基板表
面の露出した高分子膜を除去する工程と、フォトレジス
トを除去する工程を備えることを特徴とする、機能性基
を有する高分子膜の部分的形成方法。
(3) A method for forming a polymer film having a functional group on a part of the surface of a substrate, which includes a step of forming a film of a polymer compound having a functional group on the entire surface of the substrate, and applying a photoresist to the substrate. After coating, a step of removing the photoresist on the surface on which a polymer film is desired to be formed using a photolithography method, a step of removing the exposed polymer film on the surface of the substrate using a plasma etching method, and a step of removing the photoresist. A method for partially forming a polymer membrane having a functional group, comprising:
(4)基板表面の一部に機能性基を有する高分子膜を形
成する方法において、基板にフォトレジストを塗布した
後フォトリソグラフィー法により高分子膜の形成を所望
する表面のフォトレジストを除去する工程と、当該基板
に機能性基を有する高分子化合物とアルブミンと架橋剤
を含む溶液を塗布する工程と、フォトレジストを溶解し
て所定の表面以外の高分子膜を除去することを特徴とす
る、機能性基を有する高分子膜の部分的形成方法。
(4) In the method of forming a polymer film having a functional group on a part of the substrate surface, a photoresist is applied to the substrate and then the photoresist on the surface on which the polymer film is desired to be formed is removed by photolithography. a step of applying a solution containing a polymer compound having a functional group, albumin, and a crosslinking agent to the substrate; and dissolving the photoresist and removing the polymer film on areas other than the predetermined surface. , a method for partially forming a polymer membrane having functional groups.
JP2299290A 1990-11-05 1990-11-05 Method for partially forming polymer membrane having functional group Pending JPH04173841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2299290A JPH04173841A (en) 1990-11-05 1990-11-05 Method for partially forming polymer membrane having functional group

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2299290A JPH04173841A (en) 1990-11-05 1990-11-05 Method for partially forming polymer membrane having functional group

Publications (1)

Publication Number Publication Date
JPH04173841A true JPH04173841A (en) 1992-06-22

Family

ID=17870617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2299290A Pending JPH04173841A (en) 1990-11-05 1990-11-05 Method for partially forming polymer membrane having functional group

Country Status (1)

Country Link
JP (1) JPH04173841A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08178886A (en) * 1994-12-26 1996-07-12 Agency Of Ind Science & Technol Enzyme electrode and its manufacture
JP2003527615A (en) * 2000-03-17 2003-09-16 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ Cell patterning technology
JP2006042795A (en) * 2004-06-30 2006-02-16 Hokkaido Univ Base material for culturing cell, method for producing the same and method for culturing cell
WO2010038579A1 (en) * 2008-09-30 2010-04-08 ソニー株式会社 Process for producing microbeads and microbeads
CN109130041A (en) * 2017-06-28 2019-01-04 洛阳尖端技术研究院 A kind of ice-covering-proof film and preparation method thereof

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JPS6288952A (en) * 1985-10-15 1987-04-23 Matsushita Electric Works Ltd Enzyme electrode
JPS63101743A (en) * 1986-10-18 1988-05-06 Matsushita Electric Works Ltd Functional electrode
JPS63161627A (en) * 1986-12-25 1988-07-05 Toshiba Corp Substrate
JPH01236207A (en) * 1987-07-24 1989-09-21 Nippon Steel Corp Manufacture of thin polydiacetylene film
JPH02236153A (en) * 1989-03-08 1990-09-19 Kanzaki Paper Mfg Co Ltd Permselective membrane and electrode using the same
JPH02255716A (en) * 1989-03-29 1990-10-16 Ricoh Co Ltd Photochemical production of electrically conductive polymer film formed into pattern shape

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Publication number Priority date Publication date Assignee Title
JPS6188135A (en) * 1984-10-05 1986-05-06 Nec Corp Production of semiconductor biosensor
JPS61210332A (en) * 1985-03-15 1986-09-18 Nippon Telegr & Teleph Corp <Ntt> Material for nonlinear optical element and formation of pattern
JPS6288952A (en) * 1985-10-15 1987-04-23 Matsushita Electric Works Ltd Enzyme electrode
JPS63101743A (en) * 1986-10-18 1988-05-06 Matsushita Electric Works Ltd Functional electrode
JPS63161627A (en) * 1986-12-25 1988-07-05 Toshiba Corp Substrate
JPH01236207A (en) * 1987-07-24 1989-09-21 Nippon Steel Corp Manufacture of thin polydiacetylene film
JPH02236153A (en) * 1989-03-08 1990-09-19 Kanzaki Paper Mfg Co Ltd Permselective membrane and electrode using the same
JPH02255716A (en) * 1989-03-29 1990-10-16 Ricoh Co Ltd Photochemical production of electrically conductive polymer film formed into pattern shape

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08178886A (en) * 1994-12-26 1996-07-12 Agency Of Ind Science & Technol Enzyme electrode and its manufacture
JP2003527615A (en) * 2000-03-17 2003-09-16 プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ Cell patterning technology
JP2006042795A (en) * 2004-06-30 2006-02-16 Hokkaido Univ Base material for culturing cell, method for producing the same and method for culturing cell
JP4752047B2 (en) * 2004-06-30 2011-08-17 国立大学法人北海道大学 Method for producing cell culture substrate and cell culture method
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WO2010038579A1 (en) * 2008-09-30 2010-04-08 ソニー株式会社 Process for producing microbeads and microbeads
CN102165317A (en) * 2008-09-30 2011-08-24 索尼公司 Process for producing microbeads and microbeads
US8546068B2 (en) 2008-09-30 2013-10-01 Sony Corporation Method for fabricating microbeads and microbeads
CN109130041A (en) * 2017-06-28 2019-01-04 洛阳尖端技术研究院 A kind of ice-covering-proof film and preparation method thereof

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