JPH0413862B2 - - Google Patents

Info

Publication number
JPH0413862B2
JPH0413862B2 JP62146610A JP14661087A JPH0413862B2 JP H0413862 B2 JPH0413862 B2 JP H0413862B2 JP 62146610 A JP62146610 A JP 62146610A JP 14661087 A JP14661087 A JP 14661087A JP H0413862 B2 JPH0413862 B2 JP H0413862B2
Authority
JP
Japan
Prior art keywords
region
type
exposed
insulating film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62146610A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62295446A (ja
Inventor
Hiroshi Shiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62146610A priority Critical patent/JPS62295446A/ja
Publication of JPS62295446A publication Critical patent/JPS62295446A/ja
Publication of JPH0413862B2 publication Critical patent/JPH0413862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP62146610A 1987-06-12 1987-06-12 半導体集積回路装置 Granted JPS62295446A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62146610A JPS62295446A (ja) 1987-06-12 1987-06-12 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62146610A JPS62295446A (ja) 1987-06-12 1987-06-12 半導体集積回路装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1425278A Division JPS54107280A (en) 1978-02-10 1978-02-10 Semiconductor integrated circuit unit

Publications (2)

Publication Number Publication Date
JPS62295446A JPS62295446A (ja) 1987-12-22
JPH0413862B2 true JPH0413862B2 (enrdf_load_stackoverflow) 1992-03-11

Family

ID=15411625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62146610A Granted JPS62295446A (ja) 1987-06-12 1987-06-12 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS62295446A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119484A (en) * 1974-08-09 1976-02-16 Hitachi Ltd Handotaisochito sonoseizohoho
JPS5843912B2 (ja) * 1975-05-06 1983-09-29 松下電器産業株式会社 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JPS62295446A (ja) 1987-12-22

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