JPH0410739B2 - - Google Patents
Info
- Publication number
- JPH0410739B2 JPH0410739B2 JP18109683A JP18109683A JPH0410739B2 JP H0410739 B2 JPH0410739 B2 JP H0410739B2 JP 18109683 A JP18109683 A JP 18109683A JP 18109683 A JP18109683 A JP 18109683A JP H0410739 B2 JPH0410739 B2 JP H0410739B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon
- substrate
- dry etching
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000004381 surface treatment Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 fluorine ions Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18109683A JPS6074441A (ja) | 1983-09-29 | 1983-09-29 | 半導体層の表面処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18109683A JPS6074441A (ja) | 1983-09-29 | 1983-09-29 | 半導体層の表面処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6074441A JPS6074441A (ja) | 1985-04-26 |
| JPH0410739B2 true JPH0410739B2 (de) | 1992-02-26 |
Family
ID=16094758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18109683A Granted JPS6074441A (ja) | 1983-09-29 | 1983-09-29 | 半導体層の表面処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074441A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4701998A (en) * | 1985-12-02 | 1987-10-27 | International Business Machines Corporation | Method for fabricating a bipolar transistor |
| US4897154A (en) * | 1986-07-03 | 1990-01-30 | International Business Machines Corporation | Post dry-etch cleaning method for restoring wafer properties |
| JP2736061B2 (ja) * | 1987-09-17 | 1998-04-02 | 株式会社東芝 | 半導体装置の製造方法 |
| US4886765A (en) * | 1988-10-26 | 1989-12-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making silicides by heating in oxygen to remove contamination |
-
1983
- 1983-09-29 JP JP18109683A patent/JPS6074441A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6074441A (ja) | 1985-04-26 |
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