JPH0394843A - Synthetic quartz glass crucible and its production - Google Patents
Synthetic quartz glass crucible and its productionInfo
- Publication number
- JPH0394843A JPH0394843A JP22890789A JP22890789A JPH0394843A JP H0394843 A JPH0394843 A JP H0394843A JP 22890789 A JP22890789 A JP 22890789A JP 22890789 A JP22890789 A JP 22890789A JP H0394843 A JPH0394843 A JP H0394843A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- quartz glass
- viscosity
- synthetic quartz
- glass crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 12
- 230000003301 hydrolyzing effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 6
- 238000002844 melting Methods 0.000 abstract description 6
- 230000008018 melting Effects 0.000 abstract description 6
- 238000005245 sintering Methods 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 238000003980 solgel method Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000006148 magnetic separator Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229910021489 α-quartz Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
- C03B19/066—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
Abstract
Description
【発明の詳細な説明】
［産業土の利用分野］
本発明は合成石英ガラスるつぼ、特には天然石英ガラス
と同等以上の高温粘度を有することから半導体基村など
の溶融るつぼとして有用とされる合成石英ガラスるつぼ
およびその製造方法に関するものである。[Detailed Description of the Invention] [Field of Application of Industrial Soil] The present invention is a synthetic silica glass crucible, particularly a synthetic quartz glass crucible that is useful as a melting crucible for semiconductor substrates because it has a high-temperature viscosity equal to or higher than that of natural quartz glass. The present invention relates to a quartz glass crucible and a method for manufacturing the same.
［従来の技術］
半導体物質、特にシリコン車結晶の引上げ用るつぼは高
温での耐熱性Ｃすぐれていることから天然石英ガラス製
のものが汎用されているが、天然石英ガラスは不純物を
含有していることから最近における半導体メモリの高集
積化のために歩留まりの低下が問題となり、この高純度
化が要望されている。[Prior Art] Crucibles for pulling semiconductor materials, especially silicon wheel crystals, are commonly made of natural quartz glass because of their excellent heat resistance C at high temperatures, but natural quartz glass contains impurities. Due to the recent increase in the degree of integration of semiconductor memories, a decrease in yield has become a problem, and higher purity is desired.
［発明が解決しようとする課題］
このため、このるつぼを純度の高い合成石英ガラスで作
ることも検討されているが、■四塩化けい素などを酸水
素火炎中で加水分解させてシリカ徹粒子ヒし、これを溶
融して石英ガラスとする方法にはガラス中＆：０１１基
が１，０Ｏ０ｐｐｍも残留しているために高温粘性が低
く、真空中高温では発泡するという問題点があり、■こ
の酸水素火炎をプラズマ炎とする方法にはコストが高《
、量産化も難しいという不利がある。また、これについ
てはアルコキシシランをアルコール溶媒中で加水分解し
てシリカを作り、これを溶融して合成石英を得るという
、いわゆるゾルーゲル法によるこ辷も検討されており、
これには高純度品を安価に得るこεができる辷いう利益
があるもののＯＨ基が残り易く、製造に長時間が必要辷
されるという不利があり、高温粘性の高いものが得られ
難いという欠点がある。[Problems to be Solved by the Invention] For this reason, it is being considered to make this crucible from highly pure synthetic silica glass; However, the method of melting this to make quartz glass has the problem that the &:011 group remains in the glass at a level of 1,000 ppm, resulting in low high temperature viscosity and foaming at high temperatures in vacuum. The method of converting this oxyhydrogen flame into a plasma flame is expensive.
However, it has the disadvantage of being difficult to mass produce. In addition, a so-called sol-gel method is also being considered for this purpose, in which silica is produced by hydrolyzing alkoxysilane in an alcohol solvent, and this is then melted to obtain synthetic quartz.
Although this method has the advantage of being able to obtain high-purity products at low cost, it has the disadvantages that OH groups tend to remain, and production requires a long time, making it difficult to obtain products with high viscosity at high temperatures. There are drawbacks.
［課題を解決するための手段］
本発明はこのような不利を解決するこヒのできる合成石
英ガラスるつぼおよびその製造方法に関するもので、こ
れはＯＨ基がＢＯｐｐｍ以下であり、１，４００℃社お
ける粘度（ｌｏｇη）がｌＯ．６ポイズ以上であること
を特徴Ｌする合成石英ガラスるつぼおよびアルコキシシ
ランを加水分解して得たシリカわ３を減圧下１．７００
℃以上の温度で焼結したのち粉砕し、吸着水分を０．０
３重量％以下とした状態でアーク炎で熔融し、るつぼに
成形することを特徴とする合成石英ガラスるつぼの製造
方法に関するものである。[Means for Solving the Problems] The present invention relates to a synthetic quartz glass crucible that can solve these disadvantages and a method for manufacturing the same, which has an OH group of BOppm or less and a crucible that can be heated at 1,400°C. The viscosity (log η) at lO. A synthetic quartz glass crucible characterized by having a poise of 6 poise or more and a silica glass 3 obtained by hydrolyzing an alkoxysilane were heated under reduced pressure to 1.700 poise.
After sintering at a temperature of ℃ or higher, it is crushed to reduce the adsorbed moisture to 0.0
The present invention relates to a method for manufacturing a synthetic quartz glass crucible, which is characterized by melting with an arc flame in a state where the content is 3% by weight or less and forming it into a crucible.
すなわち、本発明者らは高温粘度が高い合成石英ガラス
るつぼをゾルーゲル法で製造する方法について種々検討
した結果、天然石英ガラスではこれに含有される０■基
ｍｂ粘度辷の間に特は相関はないが、合成石英ガラスで
はこれに含有され′Ｃいる０Ｈ基量ヒ粘度εの間に強い
相関があり、高温粘度を高くするためにはＯｌ１基含有
量を８０ｐｐｍ以下ヒする必要のあるこヒ、またこれを
８０ｐｐｍ以下とすれば合成石英ガラスの１． ． ４
０ ０℃における粘度（Ｒｏｇｎ）を１０．６ポイズ
以上ヒすることができることを見出す辷共に、このよう
な合成石英ガラスを得るためにはゾルーゲル法で得られ
たシリカを減圧下＆：］．，７００℃以上の温度で焼結
したのち粉砕し、この吸着水分を０．０３重量以下εし
、これをアーク炎で溶融し、戊形すねばよいということ
を確認して本発明を完成させた。That is, as a result of various studies by the present inventors on methods for manufacturing synthetic silica glass crucibles with high high-temperature viscosity using the sol-gel method, it was found that in natural quartz glass, there is no particular correlation between the viscosity and the 0-base MB contained in the crucible. However, in synthetic quartz glass, there is a strong correlation between the amount of 0H groups contained in it and the viscosity ε, and in order to increase the high temperature viscosity, it is necessary to reduce the content of 0H groups to 80 ppm or less. Also, if this is 80 ppm or less, synthetic quartz glass is 1. ．． 4
In addition to finding that the viscosity (Rogn) at 0.0°C can be lowered by 10.6 poise or more, in order to obtain such synthetic quartz glass, silica obtained by the sol-gel method is heated under reduced pressure. After confirming that it is necessary to sinter the product at a temperature of 700°C or higher, pulverize it, reduce the adsorbed moisture to 0.03 weight or less, melt it with an arc flame, and shape it, the present invention was completed. Ta.
以下はこれをさらじ詳述する。This will be explained in detail below.
［作 用１
本発明の合成万英ガラスるつぼは０１｛基含有量が８０
ｐｐｍ以下であり、１，４００℃における粘度（ｆｌａ
ｇη）が１０，６ポイズ以上であるものとされる。[Function 1] The synthetic Man-Ei glass crucible of the present invention has a 01 {group content of 80
ppm or less, and the viscosity at 1,400°C (fla
gη) shall be 10.6 poise or more.
これは一般に合成石英ガラスは高温粘度が低いために１
，５００℃付近で使用される半導体用シリコンなどの引
上げ用るつぼには使用できないとされていたのであるが
、粉体に吸着している水分量辷るつぼに含有されている
ＯＨ基量および高温粘度εの関係を天然石英ガラスるつ
ぼと合成石英ガラスるつぼについて比較検討したヒころ
、天然石英ガラスるつぼは天然水晶やけい砂などを原料
とするもので、このα一石英は規則正しい結晶であるｋ
めに事実上０｝１基なとは結合上存在せず、これに含有
されているＯＨ基はその気泡中あるいはガラス中に８２
０．Ｔｈして存在しでいるものであるため、元来その量
は少なく、したがってとのＯＨ基含有量と高温粘度との
間には第１図に示したように相関が認められていないけ
れども、合成石英ガラスるつぼはガラス内部におけるヨ
ＳＲ − ＳＫミ結合がるつぼ形戒時のアーク炎で加熱
されるとこれが吸着水分と反応してミＳ ｉＯＨ基とな
るために結合が弱くなり、これが増加するヒ高温粘度が
下がるものと考えられており、事実第１図に示したよう
にそのＯＨ基含有量ヒ高温粘度［ｆｆｉｏｇη（ポイズ
）］との間には強い相関のあることが確認された。This is because synthetic silica glass generally has a low high temperature viscosity.
, it was said that it could not be used in crucibles for pulling silicon for semiconductors, which are used at around 500°C, but it was difficult to use because of the amount of water adsorbed to the powder, the amount of OH groups contained in the crucible, and the high-temperature viscosity. A comparative study of the relationship between ε between natural silica glass crucibles and synthetic silica glass crucibles revealed that natural silica glass crucibles are made from natural quartz or silica sand, and this α-quartz is a regular crystal.
Therefore, there is virtually no 0}1 group in the bond, and the OH group contained in this group is 82% in the bubbles or in the glass.
0. Since it exists as Th, its amount is originally small, and therefore there is no correlation between the OH group content and high temperature viscosity as shown in Figure 1. In a synthetic silica glass crucible, when the SR-SK bonds inside the glass are heated in the arc flame of the crucible, they react with the adsorbed moisture and become SiOH groups, weakening the bonds and increasing the number of bonds. It is thought that the high-temperature viscosity of H is reduced, and in fact, as shown in FIG. 1, it has been confirmed that there is a strong correlation between the OH group content and the high-temperature viscosity [ffiogη (poise)].
したがって、本発明の合成石英ガラスるつぼについては
そのＯＨ基含有量を第１図の結果から８０ｐｐｍ以下ε
ずることが必要とされ、これによればその１，４００℃
における高温粘度（Ｊｏ３η）を１０．６ポイズ以上ヒ
することができるので、このものは半導体用シリコンな
どの溶融るつぼεしても使用するこ辷ができるεいう有
利性が与えられる。Therefore, the OH group content of the synthetic silica glass crucible of the present invention is 80 ppm or less ε from the results shown in FIG.
According to this, 1,400 degrees Celsius is required.
Since the high-temperature viscosity (Jo3η) can be lowered to 10.6 poise or more, this product has the advantage that it can be used even in melting crucibles such as silicon for semiconductors.
まｋ１この合成石英ガラスるつぼの製造をゾルーゲル法
で得られたシリカから製造するためにはアルコキシシラ
ンの加水分解で得たシリカを焼結し、粉砕してから、こ
れをアーク炎で溶融成形するのであるが、この合成石英
ガラスは上記したようじこれは含有されるＯＨ基を８０
ｐｐｍ以下とずるこヒが必要とされるので、このシリカ
の焼結は〜 気圧のような減圧下に１．７［１０℃以上
の高温で行なって得られる石英ガラス中におけるミＳｉ
−Ｓｉミ結合の発生量を多くしてミＳｉ−ＯＨ基をで
きるだけ低下させる必要があり、このように焼結して得
た′ｒｉ莢ガラス塊な粉砕すれば叶基が８０ｐｐｍ以下
辷された石英ガラス粉末２−得るこ辷ができる．目的ヒ
する合或る英ガラスるつぼはこの合成石英ガラス粉末を
アーク炎で溶融成形するこεによって得るこヒができる
が、この合成石英ガラλ粉末中に吸着水分が多量に存在
しているヒアーク炎による溶融時社合成石英ガラス中に
含有きれ゛ＣいるミＳｉ〜５ｉ＝結合がこの吸着水分ε
反応しでミＳｉ・−ＯＨ基εなり、０１１基が８０ｐｐ
Ｉｌ１以上辷なる可能性があるので、この合成石英ガラ
ス粉末中にお【→る吸着水分量は厳重に管理する必要が
あり、この［及着水分がカールフィッシャー水分測定計
での測定値で０．０３重量％以上であるεこれが合成石
英ガラス粉未中のミＳＲ−Ｓｉｉｉｉｉヒ結合してミＳ
ｌ−０１１基εなるので、これは０．０３重量％以下に
低く抑えておくことが必要ヒされ、このように低く抑え
てお＋−１ばこの反応によっでＯＨ基量が８０ｐｐｎｉ
以士ヒなることはない。なお、この吸着水分量は当然低
ければ低いほどよい巾であるが、あまり低いと静電気が
発生して成望で含なくなるおそれが１・じるので、その
よ？）なεきにはイオナイザーなどを用いて中和するこ
εがよい。In order to manufacture this synthetic quartz glass crucible from silica obtained by the sol-gel method, the silica obtained by hydrolysis of alkoxysilane is sintered, crushed, and then melted and molded using an arc flame. However, this synthetic quartz glass has 80% of the OH groups contained in it.
Since the sintering of this silica is carried out at a high temperature of 1.7 [10°C or more] under reduced pressure such as 1.7 ppm or less, the Si in the obtained silica glass is
It is necessary to increase the amount of -Si bonds to reduce the number of Si-OH groups as much as possible, and if the glass lump obtained by sintering in this way was crushed, the base group would be reduced to less than 80 ppm. Quartz glass powder 2 - Obtainable. A certain quartz glass crucible for the purpose can be obtained by melting and molding this synthetic quartz glass powder with an arc flame. When melted by flame, the free carbon contained in the synthetic quartz glass is Si ~ 5i = the bond is this adsorbed water ε
After the reaction, the Si・-OH group becomes ε, and the 011 group becomes 80pp.
The amount of adsorbed moisture in this synthetic quartz glass powder must be strictly controlled, as there is a possibility that the amount of adsorbed moisture in this synthetic quartz glass powder is 0 as measured by a Karl Fischer moisture meter. .03% by weight or more.
Since the l-011 group ε is generated, it is necessary to keep it low to 0.03% by weight or less.
There is no need to worry. Naturally, the lower the amount of adsorbed water, the better, but if it is too low, there is a risk that static electricity will be generated and it will not be absorbed. ), it is best to neutralize it using an ionizer, etc.
［実施例』 つぎ定木発明の実施例をあげる。[Example" Next, examples of the fixed tree invention will be given.
実施例
５（１（ｌ ｉのグラスライニング反応器に半導体グレ
ードのアンモニア木１３０ｊ２＆超純水３０Ｊ２を入れ
で０℃い冷却し、デフロンコート攪拌棒で攪拌しながら
、ここにメチルシリケート（蒸望晶）２Ｆｉ５ｋ３を滴
．１”し、滴下終Ｙ後遠水脱水器で脱水してＶル状シリ
カ粉１０５ｋｇを作った。Example 5 (1) Semiconductor grade ammonia wood 130J2 and ultrapure water 30J2 were placed in a glass-lined reactor, cooled to 0°C, and methyl silicate (vaporized) was added to the reactor while stirring with a deflon coated stirring rod. Crystal) 2Fi5k3 was added in 1" drop, and after the drop was finished, it was dehydrated in a centrifugal dehydrator to produce 105 kg of V-shaped silica powder.
９いでこのシリカ粉を窒素がス中に４３いて１５０℃で
乾燥してゲル状シリカ粉としてのｔ）、これを石英幻』
芯管に詰め、酸素ガス気流中で室温から１，２００℃昇
温加熱し、この２５ｋｇを高純度黒鉛ケースに詰めて真
空中で室温から１．，５００ ｔ：まで２時間、きらニ
１，５００℃から１，８００ ”Ｃまで１０時間かけて
昇温して焼結させた。In step 9, this silica powder was placed in a nitrogen atmosphere and dried at 150°C to form a gel-like silica powder.
The 25 kg was packed in a core tube and heated from room temperature to 1,200°C in an oxygen gas stream, and then packed into a high-purity graphite case and heated from room temperature to 1.0°C in vacuum. , 500 t: for 2 hours, and the temperature was raised from 1,500°C to 1,800''C over 10 hours for sintering.
つぎに、この焼結体を粉砕して粒度を５ｏ〜８０メッシ
，１に揃え、ＩＩＣＲ， ｌ｛Ｆで洗浄し、乾燥後磁選
機にかけ、吸着水分量が第１表に示Ｌ・たように０．０
０５ Ｊｉｉ％から０．０４８徂量までの１１種のザン
ブル苓・・作り、これをアーク炎を使用してるつぼに溶
融成刑し、このるつぼに含イｊ”されているＯＮ基量２
・ｌ．，４００℃に請５ける粘度を測定すると共に”．
、ごのる″）ぼ片を１０−’ トール、ｉ，５００℃に
４時間保持し・たヒきの膨れをしらべたεころ、第１表
に併記したとおりの結果が得られた。Next, this sintered body was crushed to have a particle size of 5o to 80 mesh, washed with IICR, l{F, dried, and then passed through a magnetic separator, so that the adsorbed water content was as shown in Table 1. 0.0 to
05 11 types of Zambole from 0.048% to 0.048% were made and melted in a crucible using an arc flame, and the ON group content in this crucible was 2.
・l. , to measure the viscosity at 400°C.
The results are shown in Table 1.
「発明の効果］
本発明は合成石英ガラスるつぼおよびその製造方法に関
するもので、これは前記したようにＯＨ基含存量が８０
ｐｐｍ以十であり、１，４００℃における粘度（Ｊｏｇ
η）が１０．６ポイズ以上である合成石英ガラスるつぼ
、およびアルコキシシランを加水分解して得たシリカ粉
を減圧下に１，７００℃以上の温度で焼結したのち粉砕
し、吸着水分を０．０３重量以下起した状、態でアーク
炎で溶融成形してるつぼとすると１／Ｍうものであり、
この合成石英ガラスるつぼは高温粘度が高いので半導体
シリロンの引上げるつぼヒして使用し得るという有利性
をもつものであり、これは上記したようゾルーゲル法で
作られるので安価にかつ容易に得ることができるという
有利性をもつものである。"Effects of the Invention" The present invention relates to a synthetic quartz glass crucible and a method for manufacturing the same, which, as described above, has an OH group content of 80
ppm or more, and the viscosity at 1,400°C (Jog
A synthetic silica glass crucible with a η) of 10.6 poise or higher and silica powder obtained by hydrolyzing alkoxysilane are sintered under reduced pressure at a temperature of 1,700°C or higher and then crushed to remove adsorbed moisture to zero. If it is melted and formed into a crucible with an arc flame in a state where it weighs less than .03 weight, it will weigh 1/M,
This synthetic silica glass crucible has a high viscosity at high temperatures, so it has the advantage of being used as a crucible for pulling up the semiconductor Silylon, and since it is made by the sol-gel method as mentioned above, it can be obtained easily and at low cost. This has the advantage of being possible.
第１図は天然石英ガラスるつぼと合威石英ガラスるつぼ
の含有ＯＨ基量＆Ｉ．，４００℃における粘度［ｉ！ｏ
ｇηくポイズ）］ との関係を示したグラフである。
２００
○Ｈ含有量（ｐｐｒｎ）
第１図Figure 1 shows the content of OH groups and I. , viscosity at 400°C [i! o
This is a graph showing the relationship between 200 ○H content (pprn) Figure 1
Claims (1)
℃における粘度（ｌｏｇη）が１０．６ポイズ以上であ
ることを特徴とする合成石英ガラスるつぼ。 ２、アルコキシシランを加水分解して得たシリカ粉を減
圧下１，７００℃以上の温度で焼結したのち粉砕し、吸
着水分を０．０３重量％以下とした状態でアーク炎で溶
融し、るつぼに成形することを特徴とする合成石英ガラ
スるつぼの製造方法。[Claims] 1. The OH group content is 80 ppm or less, and 1,400 ppm or less.
A synthetic silica glass crucible, characterized in that its viscosity (log η) at °C is 10.6 poise or more. 2. Silica powder obtained by hydrolyzing alkoxysilane is sintered under reduced pressure at a temperature of 1,700°C or higher, then pulverized, and melted with an arc flame in a state where the absorbed moisture is 0.03% by weight or less, A method for producing a synthetic quartz glass crucible, the method comprising forming the crucible into a crucible.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22890789A JPH0394843A (en) | 1989-09-04 | 1989-09-04 | Synthetic quartz glass crucible and its production |
| US07/485,954 US5141786A (en) | 1989-02-28 | 1990-02-27 | Synthetic silica glass articles and a method for manufacturing them |
| EP19900302137 EP0385753A3 (en) | 1989-02-28 | 1990-02-28 | Synthetic silica glass articles and a method for manufacturing them |
| US07/862,799 US5302556A (en) | 1989-02-28 | 1992-04-03 | Synthetic silica glass articles and a method for manufacturing them |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22890789A JPH0394843A (en) | 1989-09-04 | 1989-09-04 | Synthetic quartz glass crucible and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0394843A true JPH0394843A (en) | 1991-04-19 |
| JPH0464741B2 JPH0464741B2 (en) | 1992-10-15 |
Family
ID=16883725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22890789A Granted JPH0394843A (en) | 1989-02-28 | 1989-09-04 | Synthetic quartz glass crucible and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0394843A (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS472771U (en) * | 1971-01-26 | 1972-08-31 | ||
| JPS5345318A (en) * | 1976-10-06 | 1978-04-24 | Toshiba Ceramics Co | Process and apparatus for preparing glass vessel and the like of high silica content |
| JPS55167143A (en) * | 1979-06-15 | 1980-12-26 | Hitachi Ltd | Manufacture of optical glass |
| JPS5849519A (en) * | 1981-09-07 | 1983-03-23 | Toyota Motor Corp | Body floor structure of automobile |
| JPS6090836A (en) * | 1983-10-25 | 1985-05-22 | Shin Etsu Chem Co Ltd | Manufacture of synthetic quartz |
| JPS60137892A (en) * | 1983-12-26 | 1985-07-22 | Toshiba Ceramics Co Ltd | Quartz glass crucible |
| JPS6144793A (en) * | 1984-08-09 | 1986-03-04 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling up silicon single crystal |
| JPS62176928A (en) * | 1986-01-29 | 1987-08-03 | Mitsubishi Metal Corp | Production of quartz glass powder |
| JPS6330335A (en) * | 1986-07-21 | 1988-02-09 | Seiko Epson Corp | Production of quartz glass |
| JPH01215728A (en) * | 1988-02-22 | 1989-08-29 | Shinetsu Sekiei Kk | Production of quartz glass |
| JPH01275496A (en) * | 1988-04-28 | 1989-11-06 | Mitsubishi Metal Corp | Quartz crucible for pulling up silicon single crystal |
| JPH02172832A (en) * | 1988-12-22 | 1990-07-04 | Shin Etsu Chem Co Ltd | Synthesized quartz glass and production thereof |
| JPH02229735A (en) * | 1989-02-28 | 1990-09-12 | Shin Etsu Chem Co Ltd | Quartz glass member |
-
1989
- 1989-09-04 JP JP22890789A patent/JPH0394843A/en active Granted
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS472771U (en) * | 1971-01-26 | 1972-08-31 | ||
| JPS5345318A (en) * | 1976-10-06 | 1978-04-24 | Toshiba Ceramics Co | Process and apparatus for preparing glass vessel and the like of high silica content |
| JPS55167143A (en) * | 1979-06-15 | 1980-12-26 | Hitachi Ltd | Manufacture of optical glass |
| JPS5849519A (en) * | 1981-09-07 | 1983-03-23 | Toyota Motor Corp | Body floor structure of automobile |
| JPS6090836A (en) * | 1983-10-25 | 1985-05-22 | Shin Etsu Chem Co Ltd | Manufacture of synthetic quartz |
| JPS60137892A (en) * | 1983-12-26 | 1985-07-22 | Toshiba Ceramics Co Ltd | Quartz glass crucible |
| JPS6144793A (en) * | 1984-08-09 | 1986-03-04 | Toshiba Ceramics Co Ltd | Quartz glass crucible for pulling up silicon single crystal |
| JPS62176928A (en) * | 1986-01-29 | 1987-08-03 | Mitsubishi Metal Corp | Production of quartz glass powder |
| JPS6330335A (en) * | 1986-07-21 | 1988-02-09 | Seiko Epson Corp | Production of quartz glass |
| JPH01215728A (en) * | 1988-02-22 | 1989-08-29 | Shinetsu Sekiei Kk | Production of quartz glass |
| JPH01275496A (en) * | 1988-04-28 | 1989-11-06 | Mitsubishi Metal Corp | Quartz crucible for pulling up silicon single crystal |
| JPH02172832A (en) * | 1988-12-22 | 1990-07-04 | Shin Etsu Chem Co Ltd | Synthesized quartz glass and production thereof |
| JPH02229735A (en) * | 1989-02-28 | 1990-09-12 | Shin Etsu Chem Co Ltd | Quartz glass member |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0464741B2 (en) | 1992-10-15 |
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