JPH035329A - Production of synthetic quartz glass - Google Patents
Production of synthetic quartz glassInfo
- Publication number
- JPH035329A JPH035329A JP13961989A JP13961989A JPH035329A JP H035329 A JPH035329 A JP H035329A JP 13961989 A JP13961989 A JP 13961989A JP 13961989 A JP13961989 A JP 13961989A JP H035329 A JPH035329 A JP H035329A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- pressure
- heating
- silica
- under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000005245 sintering Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims abstract description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000012643 polycondensation polymerization Methods 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 abstract description 16
- 238000009792 diffusion process Methods 0.000 abstract description 9
- 239000000843 powder Substances 0.000 abstract description 9
- 239000012535 impurity Substances 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 6
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract description 6
- 230000003301 hydrolyzing effect Effects 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 239000003054 catalyst Substances 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000000034 method Methods 0.000 description 16
- 239000010453 quartz Substances 0.000 description 9
- 238000006460 hydrolysis reaction Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000008119 colloidal silica Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000004071 soot Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000005373 porous glass Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/10—Forming beads
- C03B19/1095—Thermal after-treatment of beads, e.g. tempering, crystallisation, annealing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/06—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction
- C03B19/066—Other methods of shaping glass by sintering, e.g. by cold isostatic pressing of powders and subsequent sintering, by hot pressing of powders, by sintering slurries or dispersions not undergoing a liquid phase reaction for the production of quartz or fused silica articles
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/10—Forming beads
- C03B19/1005—Forming solid beads
- C03B19/106—Forming solid beads by chemical vapour deposition; by liquid phase reaction
- C03B19/1065—Forming solid beads by chemical vapour deposition; by liquid phase reaction by liquid phase reactions, e.g. by means of a gel phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は合成石英ガラスの製造方法、特には高純度で粘
度が高く、ガス放出量が少ないことからプロセスチュー
ブ、ボート、カンチレバーなどの半導体用耐熱治具に好
適とされる合成石英ガラスの製造方法に関するものであ
る。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a method for producing synthetic quartz glass, particularly for use in semiconductors such as process tubes, boats, and cantilevers because of its high purity, high viscosity, and low gas emission. The present invention relates to a method for manufacturing synthetic quartz glass suitable for heat-resistant jigs.
[従来の技術]
石英ガラスの製造については天然の水晶粉を減圧下に2
、000℃付近の温度で溶融する方法がよく知られて
おり、これについては炭化けい素を内張すした黒鉛ルツ
ボに水晶粉を入れ、10−2〜10−4トールの減圧下
に2,000℃で溶融し、冷却の際に減圧を解除し、炭
酸ガスによって圧力を加えて泡を肉眼では見えないよう
に小さくするという方法がベルベルゲル法と呼ばれてい
る。そして、この方法で作られた石英ガラスはOH基含
有量が極端に少なく、−5i−5i−結合を含んでいる
ので高粘度であり、不純物拡散も遅いという特性をもっ
ているので、半導体拡散部材、ランプなどに多く使用さ
れている。[Conventional technology] For the production of quartz glass, natural crystal powder is heated under reduced pressure.
A well-known method is to melt crystal powder at a temperature around 1,000°C, and in this method, crystal powder is placed in a graphite crucible lined with silicon carbide and heated under reduced pressure of 10-2 to 10-4 Torr. The method of melting at 000°C, releasing the reduced pressure during cooling, and applying pressure with carbon dioxide gas to make the bubbles so small that they are invisible to the naked eye is called the Berber gel method. The quartz glass made by this method has extremely low OH group content, high viscosity because it contains -5i-5i- bonds, and slow impurity diffusion, so it can be used as a semiconductor diffusion member. It is often used in lamps, etc.
また、この石英ガラスの製造については発煙状シリカを
バインダーを用いて成形し、減圧下に1.300〜1,
500℃で焼結させ、連続的に管引きするという方法、
四塩化けい素の火炎加水分解法で生成した微粉末シリカ
スートをターゲットに付着、成長させて得た多孔買ガラ
ス部材を減圧下で焼結させる方法も知られており、さら
にはアルコキシシランを加水分解して得たシリカゾルを
コロイダルシリカと混合し、成形したのち、減圧下に焼
結するゾル−ゲル法も知られている。In addition, regarding the production of this quartz glass, fumed silica is molded using a binder, and then molded under reduced pressure to a diameter of 1.300 to 1.
A method of sintering at 500℃ and continuously drawing a tube,
A method is also known in which finely powdered silica soot produced by flame hydrolysis of silicon tetrachloride is attached to a target and grown, and a porous glass member obtained is sintered under reduced pressure. A sol-gel method is also known, in which the silica sol obtained is mixed with colloidal silica, molded, and then sintered under reduced pressure.
[発明が解決しようとする課題]
しかし、この天然石英を真空溶解する方法で得られる石
英ガラスは純度がわるく、例えばAPが20ppm 、
Feが1 ppm 、 Na、 K、 Li、
Caが1〜2 ppmであるために、これを半導体の
拡散炉部材として使用すると不純物の拡散によってシリ
コンウェー八が汚染されてしまい、シリコン素子の集積
度向上に大きな問題を与えるという不利があり、発煙状
シリカを使用する方法には安価であるけれどもこれもA
j、 Feが500ppb、 Na、 K、 LL、
Caが2〜300ppbで純度がそれ程良くなく、粘度
も高くないという不利がある。[Problems to be Solved by the Invention] However, the quartz glass obtained by vacuum melting natural quartz has poor purity, for example, AP of 20 ppm,
Fe: 1 ppm, Na, K, Li,
Since the Ca content is 1 to 2 ppm, if it is used as a semiconductor diffusion furnace member, the silicon wafer will be contaminated by the diffusion of impurities, which will pose a major problem in improving the integration degree of silicon devices. Although the method of using fuming silica is cheap, it is also A.
j, Fe is 500 ppb, Na, K, LL,
The disadvantage is that the Ca content is 2 to 300 ppb, the purity is not very good, and the viscosity is not high.
また、上記した四塩化けい素の火炎加水分解によるスー
ト法は使用する酸水素の量が製品重量に比較して多量で
コスト的に不利であるし、量産化、大型化が難しいとい
う欠点がある。なお、シリカゾルとコロイダルシリカと
を混合し成形するゾル−ゲル法は、乾燥と仮焼、焼結の
速度が速いと割れてしまい、特に大型品にその傾向が強
く、コスト高で量産化、大型化が難しいという欠点があ
り、さらに純度を高くするためには試薬、道具類の選択
は勿論のこと、乾燥、仮焼、焼結をクリーンルーム内で
行なわなければならないという不利がある。In addition, the above-mentioned soot method using flame hydrolysis of silicon tetrachloride has disadvantages in terms of cost, as the amount of oxyhydrogen used is large compared to the weight of the product, and it is difficult to mass produce and scale up. . In addition, the sol-gel method, in which silica sol and colloidal silica are mixed and molded, cracks when the drying, calcination, and sintering speeds are high, and this tendency is particularly strong in large products. It has the disadvantage that it is difficult to synthesize, and furthermore, in order to increase the purity, not only reagents and tools must be selected, but also drying, calcining, and sintering must be performed in a clean room.
[課題を解決するための手段]
本発明はこのような不利、欠点を解決した合成石英ガラ
スの製造方法に関するものであり、これはメチルシリケ
ートをアンモニアの存在下で加水分解し、縮重合させて
シリカ粒子を生成させたのち、これを酸化雰囲気におい
て加熱して脱炭後、減圧下に1,500 N1,700
℃で焼結し、ついで常圧下あるいは加圧下に1,800
〜2,200℃に加熱することを特徴とするものである
。[Means for Solving the Problems] The present invention relates to a method for producing synthetic quartz glass that solves the above disadvantages and disadvantages. After generating silica particles, they were decarburized by heating in an oxidizing atmosphere, and then heated to 1,500 N1,700 under reduced pressure.
sintered at 1,800 °C, then sintered at normal pressure or under pressure.
It is characterized by heating to ~2,200°C.
すなわち、本発明者らは高純度で粘度が高く、無泡で透
明性のよい合成石英ガラスを得る方法について種々検討
した結果、ゾル−ゲル法において始発材とされるアルコ
キシシランをメチルシリケートに特定し、これを充分精
製したうえでアンモニアの存在下で加水分解させると粒
径が大きく、孔径も大きく三次元マトリックス構造をも
つ球状のシリカが容易に得られ、これを減圧下で焼結し
、ついで高温で加熱すれば高純度で粘度の高く、しかも
不純物の拡散速度の極めて遅い合成石英ガラスを得るこ
とができることを見出し、この焼結条件、事後の加熱処
理条件についての研究を進めて本発明を完成させた。In other words, the present inventors investigated various methods for obtaining synthetic quartz glass with high purity, high viscosity, no bubbles, and good transparency, and as a result, they identified methyl silicate as the alkoxysilane used as the starting material in the sol-gel method. However, by sufficiently refining this and hydrolyzing it in the presence of ammonia, spherical silica with a large particle size and large pore size and a three-dimensional matrix structure can be easily obtained, which is sintered under reduced pressure. Next, they discovered that by heating at high temperatures, it was possible to obtain synthetic quartz glass with high purity and high viscosity, as well as an extremely slow diffusion rate of impurities.They conducted research on the sintering conditions and subsequent heat treatment conditions, and developed the present invention. completed.
以下にこれをさらに詳述する。This will be explained in further detail below.
[作 用]
本発明の合成石英ガラスの製造方法はメチルシリケート
をアンモニアの存在下で加水分解してシリカ粒子を生成
させたのち、これを脱炭し、焼結し、加熱処理して石英
ガラスとするものである。[Function] The method for producing synthetic quartz glass of the present invention involves hydrolyzing methyl silicate in the presence of ammonia to generate silica particles, then decarburizing, sintering, and heat-treating the silica particles to produce silica glass. That is.
本発明の方法における始発材は反応性に富んでおり、ア
ンモニアの存在下では溶媒なしでも容易に粒径が400
〜1 、000nmである径の大きな球状シリカを生成
するということからメチルシリケートが選択されるが、
このメチルシリケートは目的とする合成石英ガラスを高
純度のものとするということから事前に蒸留操作などに
より充分に精製したものとして供給する必要がある。The starting material used in the method of the present invention is highly reactive, and in the presence of ammonia, the particle size can easily be reduced to 400 mm without a solvent.
Methyl silicate is selected because it produces spherical silica with a large diameter of ~1,000 nm;
This methyl silicate needs to be sufficiently purified by distillation or the like before being supplied, since the desired synthetic quartz glass is to be of high purity.
このメチルシリケートは加水分解によってシリカゾルと
されるのであるが、この加水分解は公知の塩酸のような
酸触媒の存在下で行なうと得られるシリカが粒子の小さ
いものとなるので、アンモニア触媒の存在下で行なう必
要がある。このメチルシリケートをアンモニア触媒の存
在下で加水分解すると得られるシリカは粒径が400〜
1,000nmの大きい球状物となるし、このものはそ
の表面に大きな孔をもフている非常に規則的な三次元マ
トリックス構造をもつものになる。This methyl silicate is made into silica sol by hydrolysis, but if this hydrolysis is carried out in the presence of a known acid catalyst such as hydrochloric acid, the resulting silica will have small particles, so in the presence of an ammonia catalyst It is necessary to do so. The silica obtained by hydrolyzing this methyl silicate in the presence of an ammonia catalyst has a particle size of 400~
It becomes a large spherical object with a diameter of 1,000 nm, and this object has a very regular three-dimensional matrix structure with large pores on its surface.
この加水分解反応は40〜50℃で行なわせればよく、
このようにして得られたシリカゾルは例えばフィルター
プレスを使用して固液分離してシリカとすればよい。This hydrolysis reaction may be carried out at 40 to 50°C,
The silica sol thus obtained may be subjected to solid-liquid separation using, for example, a filter press to obtain silica.
このようにして得られたシリカ粉末はついでこれをカー
ボンケースに詰め、減圧下で焼結するのであるが、この
減圧は低ければ低い程よいけれども通常は10−2〜1
0−’トールとすればよい、また、この焼結温度はi、
soo℃未満では十分な焼結が行なわれず、したがって
次段における加熱によって外観上不透明なものとなるし
、1,700℃より高い温度とするとシリカ粒子に含有
されている泡が成長して大きくなり、この泡が最後まで
残るようになるので、これは1,500〜1,700℃
の範囲とする必要がある。The silica powder obtained in this way is then packed into a carbon case and sintered under reduced pressure.
The sintering temperature may be i,
If the temperature is lower than 1,700°C, sufficient sintering will not take place and the next heating step will result in an opaque appearance; if the temperature is higher than 1,700°C, the bubbles contained in the silica particles will grow and become larger. , this bubble will remain until the end, so this temperature is 1,500 to 1,700℃.
It needs to be within the range of
この焼結によってシリカは合成ガラスとされるが、本発
明の方法ではこのようにして得た石英ガラスをさらに1
,800〜2,200℃に加熱処理する。Silica is made into synthetic glass by this sintering, but in the method of the present invention, the silica glass obtained in this way is further
, 800-2,200°C.
すなわち、このようにして得られた焼結物としての石英
ガラスは炉外に取り出したのち再度加熱するのであるが
、この加熱温度は1,800〜2,200℃とすると石
英ガラスの粘度が低くなって前段の減圧焼結で発生した
泡が圧力差でつぶれ易くなり、目視でわかる泡がなくな
るという有利性が与えられるけれども、これを2,00
0℃以上とするとSIOの蒸気が激しく発生するので、
これは好ましくは1.800〜2,000℃の範囲とす
ることがよい。なお、この加熱は常圧で行なえばよいが
、これは1〜10気圧での加圧下で行なってもよく、加
圧とすればますます泡がつぶれ、目視では全く分らなく
なるという有利性が与えられる。In other words, the silica glass as a sintered product obtained in this way is heated again after being taken out of the furnace, but if the heating temperature is 1,800 to 2,200°C, the viscosity of the quartz glass is low. This gives the advantage that the bubbles generated in the previous stage of vacuum sintering are easily crushed by the pressure difference, and there are no visible bubbles.
If the temperature is above 0℃, SIO steam will be generated violently.
This is preferably in the range of 1.800 to 2,000°C. Note that this heating may be carried out at normal pressure, but it may also be carried out under pressure of 1 to 10 atmospheres, which has the advantage that the bubbles are further crushed and become completely invisible to the naked eye. It will be done.
[実施例] つぎに本発明の実施例および比較例をあげる。[Example] Next, examples of the present invention and comparative examples will be given.
実施例1
1rn’のグラスライニング反応器に20重量%のNH
4OH300uを入れ、これに充分精製したメチルシリ
ケート265 ftを滴下し、40〜50tで加水分解
反応を行なわせ、この反応液をフィルタープレスで固液
分離してシリカ粉135kgを作った。Example 1 20 wt% NH in a 1rn' glass-lined reactor
300 u of 4OH was added, 265 ft of sufficiently purified methyl silicate was added dropwise thereto, a hydrolysis reaction was carried out at 40 to 50 t, and the reaction liquid was separated into solid and liquid using a filter press to produce 135 kg of silica powder.
ついで、このシリカを石英製容器に入れ、清浄な空気の
存在下に800℃で20時間加熱処理して脱水し、脱炭
したところ、シリカ粉は95kgとなったので、この5
0kgを外径300 mmφ×内径280 mmφの容
積1.000 jlのカーボンケースに詰め、10−’
トールの減圧下に50℃/時の昇温速度で1,600
℃まで昇温して2時間焼結し、降温後取り出したところ
、外観上不透明な径が278 mmφで容積75J2の
石英インゴットが得られた。Next, this silica was placed in a quartz container and heated at 800°C for 20 hours in the presence of clean air to dehydrate and decarburize the silica powder, which weighed 95 kg.
Pack 0 kg into a carbon case with an outer diameter of 300 mmφ and an inner diameter of 280 mmφ and a volume of 1.000 Jl, and
1,600 at a heating rate of 50°C/hour under a vacuum of Torr.
The temperature was raised to .degree. C. and sintered for 2 hours, and when the temperature was lowered and taken out, an opaque quartz ingot with a diameter of 278 mm and a volume of 75 J2 was obtained.
つぎにこのインゴットをアルゴンガス雰囲気下テ2,0
00℃に1時間加熱処理したところ、径が470 mm
φで容積が2iの透明なインゴット44kgが得られ、
このものの不純物量(化学分析値)、粘度、不純物の拡
散速度(Na”イオンの拡散係数)をしらべたところ、
第1表に示したとおりの結果が得られた。Next, this ingot was heated to 2,0°C under an argon gas atmosphere.
When heated at 00℃ for 1 hour, the diameter was 470 mm.
44 kg of transparent ingot with a volume of 2i was obtained at φ,
When we investigated the amount of impurities (chemical analysis values), viscosity, and diffusion rate of impurities (diffusion coefficient of Na'' ions), we found that
The results shown in Table 1 were obtained.
しかし、比較のために天然の水晶粉を10−3トールの
減圧下に2 、000℃で溶融して作った石英(比較例
1)、発煙状シリカをポリビニルアルコールを用いて円
柱状に成形し、10−’ トールの減圧下に1.500
℃で焼結して作った石英(比較例2)、テトラエチルシ
リケートを塩酸の存在下で加水分解して得たシリカゾル
をコロイダルシリカと混合し、成形したのち、10−’
トールの減圧下に1,800℃で焼結して得た石英(
比較例3)について、その化学分析値、粘度、不純物の
拡散速度をしらべたところ、第1表に併記したとおりの
結果が得られ、本発明の方法で得られた石英がすぐれた
物性を示すことが確認された。However, for comparison, quartz made by melting natural crystal powder at 2,000°C under a reduced pressure of 10-3 Torr (Comparative Example 1) and fuming silica were molded into a cylinder shape using polyvinyl alcohol. , 1.500 under a vacuum of 10-' Torr.
Quartz made by sintering at ℃ (Comparative Example 2), silica sol obtained by hydrolyzing tetraethyl silicate in the presence of hydrochloric acid was mixed with colloidal silica, and after molding, 10-'
Quartz obtained by sintering at 1,800℃ under Torr vacuum (
Comparative Example 3) was examined for its chemical analysis values, viscosity, and diffusion rate of impurities, and the results shown in Table 1 were obtained, indicating that the quartz obtained by the method of the present invention has excellent physical properties. This was confirmed.
が極めて遅い合成石英ガラスを得ることができくので、
プロセスチューブ、ボート、カンチレバーなどの半導体
用耐熱治具として、またハロゲンランプ、赤外線ヒータ
ーなどの封管材として有用すされる合成石英ガラスを容
易に、かつ安価に得ンことができるという有利性が与え
られる。Because it is possible to obtain synthetic quartz glass with extremely slow
The advantage is that synthetic quartz glass, which is useful as heat-resistant jigs for semiconductors such as process tubes, boats, and cantilevers, and as sealing materials for halogen lamps and infrared heaters, can be obtained easily and at low cost. .
実施例2
実施例1で得られた不透明な石英インゴットを円研加工
して250 rnmφx 701のインゴットを作り、
この中心に50mmφの穴をあけ、 1,950℃の電
気炉中で延伸して外径70mm、内径80mmのバイブ
を作り、また上記の不透明インゴットについてはこれを
円研加工によって100 mmφ×701のインゴット
としたのち酸水素火炎バーナーを用いて10mmφのム
ク棒を試作した。Example 2 The opaque quartz ingot obtained in Example 1 was circularly polished to produce an ingot of 250 rnmφx 701.
A hole of 50 mmφ was made in the center and stretched in an electric furnace at 1,950°C to make a vibrator with an outer diameter of 70 mm and an inner diameter of 80 mm.The above opaque ingot was also circularly polished to a diameter of 100 mmφ×701 mm. After making it into an ingot, a 10 mm diameter bar was prototyped using an oxyhydrogen flame burner.
つぎにこのようにして作った石英バイブおよび棒の物性
をしらべたところ、実施例1の第1表と同じ特性を示し
た。Next, when the physical properties of the quartz vibrator and rod thus produced were examined, they showed the same characteristics as in Table 1 of Example 1.
[発明の効果][Effect of the invention]
Claims (1)
し、縮重合させてシリカ粒子を生成させたのち、これを
酸化雰囲気において加熱して脱炭後、減圧下に1,50
0〜1,700℃で焼結し、ついで常圧あるいは加圧下
に1,800〜2,200℃に加熱することを特徴とす
る合成石英ガラスの製造方法。1. Methyl silicate is hydrolyzed in the presence of ammonia and subjected to condensation polymerization to produce silica particles, which are then heated in an oxidizing atmosphere to decarburize, and then heated to 1,50 ml under reduced pressure.
A method for producing synthetic quartz glass, which comprises sintering at 0 to 1,700°C, and then heating to 1,800 to 2,200°C under normal pressure or pressure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1139619A JPH0717389B2 (en) | 1989-06-01 | 1989-06-01 | Method for producing synthetic quartz glass |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1139619A JPH0717389B2 (en) | 1989-06-01 | 1989-06-01 | Method for producing synthetic quartz glass |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH035329A true JPH035329A (en) | 1991-01-11 |
JPH0717389B2 JPH0717389B2 (en) | 1995-03-01 |
Family
ID=15249509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1139619A Expired - Fee Related JPH0717389B2 (en) | 1989-06-01 | 1989-06-01 | Method for producing synthetic quartz glass |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0717389B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0912322A (en) * | 1995-06-29 | 1997-01-14 | Tosoh Corp | High-purity transparent quartz glass and its production |
JPH0940434A (en) * | 1995-07-28 | 1997-02-10 | Tosoh Corp | High purity quartz glass and production thereof |
EP1167309A1 (en) * | 2000-06-28 | 2002-01-02 | Mitsubishi Materials Quartz Corporation | Synthetic quartz powder, its production process, and synthetic quartz crucible |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS599497A (en) * | 1982-06-23 | 1984-01-18 | ヴアレオ | Method and device for assembling at least one tube on plate |
JPS60226418A (en) * | 1984-04-20 | 1985-11-11 | Nippon Kogaku Kk <Nikon> | Preparation of quartz glass mass |
JPS63100025A (en) * | 1986-10-15 | 1988-05-02 | Seiko Epson Corp | Production of quartz glass |
-
1989
- 1989-06-01 JP JP1139619A patent/JPH0717389B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS599497A (en) * | 1982-06-23 | 1984-01-18 | ヴアレオ | Method and device for assembling at least one tube on plate |
JPS60226418A (en) * | 1984-04-20 | 1985-11-11 | Nippon Kogaku Kk <Nikon> | Preparation of quartz glass mass |
JPS63100025A (en) * | 1986-10-15 | 1988-05-02 | Seiko Epson Corp | Production of quartz glass |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0912322A (en) * | 1995-06-29 | 1997-01-14 | Tosoh Corp | High-purity transparent quartz glass and its production |
JPH0940434A (en) * | 1995-07-28 | 1997-02-10 | Tosoh Corp | High purity quartz glass and production thereof |
EP1167309A1 (en) * | 2000-06-28 | 2002-01-02 | Mitsubishi Materials Quartz Corporation | Synthetic quartz powder, its production process, and synthetic quartz crucible |
US6826927B2 (en) | 2000-06-28 | 2004-12-07 | Mitsubishi Materials Quartz Corporation | Synthetic quartz powder, its production process, and synthetic quartz crucible |
Also Published As
Publication number | Publication date |
---|---|
JPH0717389B2 (en) | 1995-03-01 |
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