JPH0450263B2 - - Google Patents
Info
- Publication number
- JPH0450263B2 JPH0450263B2 JP32562688A JP32562688A JPH0450263B2 JP H0450263 B2 JPH0450263 B2 JP H0450263B2 JP 32562688 A JP32562688 A JP 32562688A JP 32562688 A JP32562688 A JP 32562688A JP H0450263 B2 JPH0450263 B2 JP H0450263B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- glass
- synthetic quartz
- nitrogen
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 18
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 25
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 230000000704 physical effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000007062 hydrolysis Effects 0.000 description 5
- 238000006460 hydrolysis reaction Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000003301 hydrolyzing effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000006148 magnetic separator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000005373 porous glass Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Glass Melting And Manufacturing (AREA)
- Glass Compositions (AREA)
Description
(産業上の利用分野)
本発明は合成石英ガラス、特には合成石英ガラ
ス中に極微量の窒素を導入することによつてその
高温における粘度、硬度、ヤング率、電気抵抗、
化学的耐久性を大幅に改良したので、半導体工業
用のシリコン引上げるつぼ、拡散プロセスチユー
ブ、拡散治具、洗浄槽用として、また高温絶縁体
や各種機器の基板ガラスとして有用とされる合成
石英ガラスに関するものである。
(従来の技術)
石英ガラスはシリカ系ガラスの中では純度、耐
熱性、機械的強度が最もすぐれているものである
が、現在の石英ガラスのレベルでは未だ満足でき
ない用途も多く、この特性向上が要求されてい
る。
そのため、この石英ガラスについてはこの分子
中の≡Si−0≡基の酸素原子を窒素原子で置換し
て
(Industrial Application Field) The present invention introduces a very small amount of nitrogen into synthetic quartz glass, particularly synthetic quartz glass, to improve its viscosity, hardness, Young's modulus, and electrical resistance at high temperatures.
Synthetic quartz glass has significantly improved chemical durability, making it useful for silicon pulling crucibles, diffusion process tubes, diffusion jigs, and cleaning tanks for the semiconductor industry, as well as as high-temperature insulators and substrate glass for various equipment. It is related to. (Conventional technology) Quartz glass has the highest purity, heat resistance, and mechanical strength among silica-based glasses, but there are still many applications that cannot be satisfied with the current level of silica glass, and improvements in these properties are needed. requested. Therefore, for this silica glass, the oxygen atoms of the ≡Si-0≡ group in this molecule are replaced with nitrogen atoms.
【式】という構造をもつものとする
ことが提案されており、これについては例えば珪
酸質が96%で約200m2/gの比表面積をもつバイ
コール型の多孔質ガラスを窒素ガスをキヤリヤー
ガスとしてアンモニアで処理して窒素含有量が3
重量%であるガラスを合成したという報告があり
[T.H.Elmer,J.Am.Ceram.Soc.,50(1967)
275参照]これにはこのガラスは徐冷点が150℃向
上したとされている。また、石英ガラスに窒素を
導入した例としてはシリコンウエーハ上に気相合
成でオキシナイトライド膜を設けたという報告も
あり[J,Electrochem.Soc.,115(1968)318参
照]、これについてはゾルーゲル法で作られた多
孔質ゲルに400〜800℃でアンモニアを通ずるとい
う方法も検討されている。
(解決されるべき課題)
しかし、この公知の方法に開示されている石英
ガラスは窒素が多量に含有されているもののガラ
ス徐冷点の向上が述べられているだけであるし、
シリコンウエーハ処理のものは表面にオキシナイ
トライド膜を設けたもので石英ガラスブロツクに
関するものではなく、さらにゾルーゲル法による
多孔質ゲルのアンモニアによる処理はこれが発泡
体となるために実用性がないという不利がある。
(課題を解決するための手段)
本発明はこのような不利を解決した合成石英ガ
ラスおよびその製造方法に関するものであり、こ
れは1400℃における粘度が1010ポイズ以上、ビツ
カース硬度が1000Kg/mm2、ヤング率が90 GPa以
上であり、1200℃におけるで電気抵抗が10-8Ω・
cm/cm2以上であることを特徴とする合成石英ガラ
ス、およびメチルシリケートをアンモニアの存在
下で加水分解してシリカ粒子を作り、これを原料
として合成石英ガラスを製造することを特徴とす
る上記した合成石英ガラスの製造方法に関するも
のである。
すなわち、本発明者らは石英ガラスに窒素を導
入して石英ガラスを改質する方法について種々検
討した結果、石英ガラスに窒素を導入するために
はアルコキシシランを加水分解してシリカ粒子を
作り、これを溶融して石英ガラスを得る、いわゆ
るゾルーゲル法において、アルコキシシランとし
てメチルシリケートを使用し、この加水分解をア
ンモニアの存在下で行ない、ついでこれを加熱す
れば極微量であるけれども窒素を石英ガラス中に
導入することができることを見出すと共に、この
ようにして得られた石英ガラスは意外にもその物
性が大幅に改良され、1400℃における粘度が1010
ポイズ以上、ビツカース硬度が1000Kg/mm2以上、
ヤング率が90Gpa以上となり、1200℃における電
気抵抗が10-8Ω・cm/cm2以上のものになるという
ことを確認して本発明を完成させた。
以下にこれをさらに詳細する。
(作用)
本発明の合成石英ガラスはその中に微量の窒素
を導入することによつてその物性値を大幅に改良
したものであるが、石英ガラス中に窒素を導入す
るのはメチルシリケートをアンモニアの存在下で
加水分解すればよい。
本発明の合成石英ガラスはいわゆるゾルーゲル
法で作ればよいが、これはメチルシリケートをア
ンモニアの存在下で加水分解してゾル状シリカ粒
子を作り、ついでこれを乾燥してゲル状シリカ粒
子としたのち、加熱処理すればよい。
この加水分解時に系内に存在させるアンモニア
の量は目的とする合成石英ガラス中に導入すべき
窒素量によつて調節すればよいが、本発明の目的
とする合成石英ガラス中に導入させるべき窒素量
が10〜1000ppm重量%という極微量のものでよい
ということから、これはメチリシリケート100重
量部に対して50〜500重量部とすればよく、この
加水分解はこのアンモニアの存在下に常温で行な
わせればよい。この加水分解で得られたゾル状の
シリカ粒子は遠心脱水器で脱水後、例えば窒素ガ
ス気流中において150℃で乾燥してゲル状シリカ
粒子としたのち、酸素ガス中において室温から
1200℃まで10時間程度加熱してガラス化すればよ
いが、この石英ガラスはさらに真空中において室
温から1500℃まで2時間、ついで1500℃から1700
℃まで10時間程度加熱して焼結させることがよ
い。
このようにして得られた合成石英ガラスは10〜
1000ppmの窒素が導入されたものとなるので、こ
のものはその物性値が市販の合成石英ガラス、天
然石英ガラスにくらべて大幅に改良されたものと
なり、その1400℃における粘性値が1010ポイズ以
上、ビツカース硬度が、1000Kg/mm2以上、ヤング
率が90Gpa以上となり、1200℃における電気抵抗
値も108Ω・cm/cm2以上になるという優れた物性
値を示すので、これは例えば半導体工業における
シリコン引上げ用るつぼ、拡散プロセスチユー
ブ、拡散治具、洗浄槽用として有用とされるほ
か、高温絶縁体や各種機器の基板ガラスとしても
有用とされる。
(実施例)
つぎに本発明の実施例、比較例をあげる。
実施例、比較例1〜2
500lのグラスライニング反応器に半導体グレー
ドのアンモニア水130lと超純水30lを入れて0℃
に冷却し、テフロンコート撹拌棒で撹拌しなが
ら、ここにメチルシリケート(蒸留品)265Kgを
滴下し、滴下終了後遠水脱水器で脱水してゾル状
シリカ粉105Kgを作つた。
ついでこのシリカ粉を窒素ガス中において150
℃で乾燥してゲル状シリカ粉としてのち、これを
石英炉芯管に詰め、酸素ガス気流中で室温から
1200℃昇温加熱し、この25Kgを高純度黒鉛ケース
に詰めて真空中で室温から1500℃まで2時間、さ
らに、1500℃から1700℃まで10時間かけて昇温し
て焼結させた。
つぎに、この焼結体を粉砕して粒度を50〜80メ
ツシユに揃え、HCl,HFで洗浄し、乾燥後磁選
機にかけてから高純度黒鉛ケースに詰め直し、
10-3トールの真空中で室温から1800℃まで20時間
かけて昇温したところ、300mmΦ×600mmLの透明
な合成石英インゴツトが得られたが、この石英ガ
ラスにはその500ppmの窒素が導入されており、
この物性値を測定したところ、第1表に示した通
りの結果が得られた。
しかし、比較のために市販の合成石英ガラス・
スプラシイル[西独ヘラウス社製商品名](比較
例1)および市販の天然石英ガラス・ヘラルツク
ス[西独ヘラウス社製商品名](比較例2)につ
いての物性値しらべたところ、第1表に併記した
とおりの結果が得られ、本発明の合成石英ガラス
がすぐれた物性値をもつものであることが確認さ
れた。It has been proposed to have the structure [Formula]. For example, a Vycol type porous glass with 96% silicic acid and a specific surface area of about 200 m 2 /g is heated with ammonia using nitrogen gas as a carrier gas. treatment to reduce the nitrogen content to 3.
There is a report that a glass with a weight percent of
275] This glass is said to have improved the annealing point by 150°C. There is also a report that an oxynitride film was formed on a silicon wafer by vapor phase synthesis as an example of introducing nitrogen into quartz glass [see J. Electrochem. Soc., 115 (1968) 318]. Another method being considered is to pass ammonia through a porous gel made by the sol-gel method at 400 to 800°C. (Problem to be Solved) However, although the silica glass disclosed in this known method contains a large amount of nitrogen, it is only stated that the annealing point of the glass is improved.
The silicon wafer treatment has an oxynitride film on the surface and is not related to quartz glass blocks.Furthermore, the treatment of porous gel with ammonia using the sol-gel method has the disadvantage that it becomes a foam, making it impractical. There is. (Means for Solving the Problems) The present invention relates to a synthetic quartz glass that solves these disadvantages and a method for producing the same, which has a viscosity of 10 to 10 poise or more at 1400°C and a Vickers hardness of 1000 Kg/mm 2 , the Young's modulus is 90 GPa or more, and the electrical resistance at 1200°C is 10 -8 Ω・
cm/cm 2 or more, and the above-mentioned synthetic quartz glass characterized by producing silica particles by hydrolyzing methyl silicate in the presence of ammonia and using the silica particles as a raw material. The present invention relates to a method for producing synthetic quartz glass. That is, the present inventors have studied various methods of modifying silica glass by introducing nitrogen into quartz glass, and have found that in order to introduce nitrogen into quartz glass, alkoxysilane is hydrolyzed to produce silica particles. In the so-called sol-gel method, in which silica glass is obtained by melting this, methyl silicate is used as the alkoxysilane, and this hydrolysis is carried out in the presence of ammonia, which is then heated to release a very small amount of nitrogen into silica glass. In addition, the physical properties of the quartz glass thus obtained were surprisingly improved, with a viscosity of 10 10 at 1400°C.
Poise or more, Bitskers hardness is 1000Kg/ mm2 or more,
The present invention was completed by confirming that the Young's modulus was 90 Gpa or more and the electrical resistance at 1200°C was 10 −8 Ω·cm/cm 2 or more. This will be explained in further detail below. (Function) The physical properties of the synthetic silica glass of the present invention are greatly improved by introducing a small amount of nitrogen into it. Hydrolysis may be carried out in the presence of. The synthetic silica glass of the present invention may be produced by the so-called sol-gel method, which involves hydrolyzing methyl silicate in the presence of ammonia to produce sol-like silica particles, which are then dried to form gel-like silica particles. , heat treatment is sufficient. The amount of ammonia present in the system at the time of hydrolysis may be adjusted depending on the amount of nitrogen to be introduced into the synthetic quartz glass aimed at. Since a very small amount of 10 to 1000 ppm by weight is sufficient, the amount should be 50 to 500 parts by weight per 100 parts by weight of methylisilicate, and this hydrolysis is carried out at room temperature in the presence of this ammonia. You can do it with The sol-like silica particles obtained by this hydrolysis are dehydrated in a centrifugal dehydrator, dried at 150°C in a nitrogen gas stream to form gel-like silica particles, and then heated from room temperature to oxygen gas.
It can be vitrified by heating it to 1200℃ for about 10 hours, but this quartz glass is further heated in a vacuum from room temperature to 1500℃ for 2 hours, then from 1500℃ to 1700℃.
It is preferable to sinter by heating to ℃ for about 10 hours. The synthetic quartz glass obtained in this way is 10~
Since 1000 ppm of nitrogen has been introduced, the physical properties of this product are significantly improved compared to commercially available synthetic silica glass and natural quartz glass, and the viscosity value at 1400°C is 10 to 10 poise or higher. It exhibits excellent physical properties such as a Bitkers hardness of 1000 Kg/mm 2 or more, a Young's modulus of 90 Gpa or more, and an electrical resistance value of 10 8 Ω・cm/cm 2 or more at 1200°C. It is useful for silicon pulling crucibles, diffusion process tubes, diffusion jigs, and cleaning tanks, as well as for high-temperature insulators and substrate glass for various devices. (Example) Next, examples of the present invention and comparative examples will be given. Examples, Comparative Examples 1 to 2 130 liters of semiconductor grade ammonia water and 30 liters of ultrapure water were placed in a 500 liter glass-lined reactor and heated to 0°C.
265 kg of methyl silicate (distilled product) was added dropwise to the mixture while stirring with a Teflon-coated stirring rod, and after the addition was completed, it was dehydrated using a centrifugal dehydrator to produce 105 kg of sol-like silica powder. Next, this silica powder was heated to 150% in nitrogen gas.
After drying at ℃ to form gel-like silica powder, this was packed into a quartz furnace tube and heated from room temperature in an oxygen gas stream.
The material was heated to 1200°C, and the 25kg was packed in a high-purity graphite case and sintered in a vacuum from room temperature to 1500°C for 2 hours, and then from 1500°C to 1700°C for 10 hours. Next, this sintered body is crushed to have a particle size of 50 to 80 mesh, washed with HCl and HF, dried, passed through a magnetic separator, and then packed back into a high-purity graphite case.
When the temperature was raised from room temperature to 1800℃ over 20 hours in a vacuum of 10 -3 Torr, a transparent synthetic quartz ingot measuring 300mmΦ x 600mmL was obtained, but 500ppm of nitrogen was introduced into this quartz glass. Ori,
When the physical properties were measured, the results shown in Table 1 were obtained. However, for comparison, commercially available synthetic quartz glass
When we investigated the physical properties of Splashil [trade name manufactured by Heraus AG, West Germany] (Comparative Example 1) and commercially available natural quartz glass Heraltux [trade name manufactured by Heraus AG, West Germany] (Comparative Example 2), the results were as shown in Table 1. The following results were obtained, and it was confirmed that the synthetic quartz glass of the present invention has excellent physical properties.
Claims (1)
ース硬度が1000Kg/mm2以上、ヤング率が90GPa以
上であり、1200℃における電気抵抗が108Ω・
cm/cm2以上であることを特徴とする合成石英ガラ
ス。 2 メチルシリケートをアンモニアの存在下で加
水分解してシリカ粒子を作り、これを原料として
合成石英ガラスを製造することを特徴とする請求
項1に記載の合成石英ガラスの製造方法。[Claims] 1. Viscosity at 1400°C of 10 10 poise or more, Vickers hardness of 1000 Kg/mm 2 or more, Young's modulus of 90 GPa or more, and electrical resistance at 1200°C of 10 8 Ω・
Synthetic quartz glass characterized by cm/cm 2 or more. 2. The method for producing synthetic quartz glass according to claim 1, wherein methyl silicate is hydrolyzed in the presence of ammonia to produce silica particles, and synthetic quartz glass is produced using the particles as a raw material.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32562688A JPH02172832A (en) | 1988-12-22 | 1988-12-22 | Synthesized quartz glass and production thereof |
US07/404,585 US4979973A (en) | 1988-09-13 | 1989-09-08 | Preparation of fused silica glass by hydrolysis of methyl silicate |
DE8989402471T DE68905735T2 (en) | 1988-09-13 | 1989-09-11 | SYNTHETIC MOLTEN QUARTZ GLASS AND METHOD FOR THE PRODUCTION THEREOF. |
EP89402471A EP0360659B1 (en) | 1988-09-13 | 1989-09-11 | Synthetic fused silica glass and method for the preparation thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32562688A JPH02172832A (en) | 1988-12-22 | 1988-12-22 | Synthesized quartz glass and production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02172832A JPH02172832A (en) | 1990-07-04 |
JPH0450263B2 true JPH0450263B2 (en) | 1992-08-13 |
Family
ID=18178958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32562688A Granted JPH02172832A (en) | 1988-09-13 | 1988-12-22 | Synthesized quartz glass and production thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02172832A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0394843A (en) * | 1989-09-04 | 1991-04-19 | Shin Etsu Chem Co Ltd | Synthetic quartz glass crucible and its production |
JPH085683B2 (en) * | 1989-07-06 | 1996-01-24 | 信越石英株式会社 | Method for producing synthetic quartz glass member having excellent heat resistance and processability |
KR100566051B1 (en) * | 1998-07-31 | 2006-03-29 | 신에쯔 세끼에이 가부시키가이샤 | Quartz glass crucible for pulling up silicon single crystal and process for producing the same |
-
1988
- 1988-12-22 JP JP32562688A patent/JPH02172832A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH02172832A (en) | 1990-07-04 |
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