JPH02172832A - Synthesized quartz glass and production thereof - Google Patents
Synthesized quartz glass and production thereofInfo
- Publication number
- JPH02172832A JPH02172832A JP32562688A JP32562688A JPH02172832A JP H02172832 A JPH02172832 A JP H02172832A JP 32562688 A JP32562688 A JP 32562688A JP 32562688 A JP32562688 A JP 32562688A JP H02172832 A JPH02172832 A JP H02172832A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- nitrogen
- ammonia
- synthesized quartz
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 12
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 3
- 239000002994 raw material Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 33
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 6
- 230000007062 hydrolysis Effects 0.000 abstract description 5
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 5
- 230000003301 hydrolyzing effect Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 230000000704 physical effect Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000000499 gel Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000003980 solgel method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000006148 magnetic separator Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000005373 porous glass Substances 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は合成石英ガラス、特には合成石英ガラス中に８
ｉ微量の窒素を導入することによってその高温における
粘度、硬度、ヤング率、電気抵抗、化学的耐久性を大幅
に改良したので、半導体工業用のシリコン引上げるつぼ
、拡散プロセスチューブ、拡散治具、洗浄槽用として、
また高温絶縁体や各種機器の基板ガラスとして有用とさ
れる合成石英ガラスに関するものである。Detailed Description of the Invention (Industrial Field of Application) The present invention relates to synthetic quartz glass, particularly synthetic quartz glass containing 8
By introducing a trace amount of nitrogen, we have significantly improved its viscosity, hardness, Young's modulus, electrical resistance, and chemical durability at high temperatures, making it suitable for use in silicon pulling crucibles, diffusion process tubes, diffusion jigs, and cleaning for the semiconductor industry. For tank use,
The present invention also relates to synthetic quartz glass, which is useful as a high-temperature insulator and substrate glass for various devices.
（従来の技術）
石英ガラスはシリカ系ガラスの中では純度、耐熱性、機
械的強度が最もすぐれているものであるが、現在の石英
ガラスのレベルでは未だ満足できない用途も多く、この
特性向上が要求されている。(Conventional technology) Quartz glass has the highest purity, heat resistance, and mechanical strength among silica-based glasses, but there are still many applications that cannot be satisfied with the current level of silica glass, and improvements in these properties are needed. requested.
そのため、この石英ガラスについてはこの分子中の＝Ｓ
ｉ−０＝基の酸素原子を窒素原子で置換して＝ ５ｉ−
Ｎ−５ｉＥという構造をもつものとすることが提一
案されており、これについては例えば珪酸質が９６％で
約２ｏｏｍ２／ｇの比表面積をもつバイコール型の多孔
質ガラスを窒素ガスをキャリヤーガスとしてアンモニア
で処理して窒素含有量が３重量％であるガラスを合成し
たという報告があり（Ｔ、Ｈ。Therefore, for this quartz glass, =S in this molecule
i-0 = replacing the oxygen atom of the group with a nitrogen atom = 5i-
It has been proposed to have a structure called N-5iE, and for this, for example, Vycol-type porous glass with 96% silicic acid and a specific surface area of about 2oom2/g is heated with nitrogen gas as a carrier gas. There is a report that a glass with a nitrogen content of 3% by weight was synthesized by treatment with ammonia (T, H).
Ｅｌｍｅｒ、 Ｊ、 ＡＯｌ、 Ｃｅｒａｍ、 Ｓｏｃ
、、 ５０ （１９［ｉ７） ２７５参照］これにはこ
のガラスは徐冷点が１５０℃向上したとされている。ま
た、石英ガラスに窒素を導入した例としてはシリコンウ
ェーハ上に気相合成でオキシナイトライド膜を設けたと
いう報告もあり［Ｊ、 Ｅｌｅｃｔｒｏｃｈｅｍ、 Ｓ
ｏｃ、、 １１５（１９ｆｉ８） ３１Ｂ参照］、これ
についてはゾル−ゲル法で作られた多孔質ゲルに４００
〜８００℃でアンモニアを通ずるという方法も検討され
ている。Elmer, J., A.O.L., Ceram, Soc.
,, 50 (19 [i7) 275] It is said that this glass has an annealing point improved by 150°C. In addition, as an example of introducing nitrogen into quartz glass, there is a report that an oxynitride film was formed on a silicon wafer by vapor phase synthesis [J, Electrochem, S.
oc,, 115 (19fi8) 31B], for which porous gels made by the sol-gel method have 400
A method of passing ammonia through at ~800°C is also being considered.
（解決されるべぎ課題）
しかし、この公知の方法に開示されている石英ガラスは
窒素が多量に含有されているもののガラス徐冷点の向上
が述べられているだけであるし、シリコンウェーハ処理
のものは表面にオキシナイトライド膜を設けたもので石
英ガラスブロックに関するものではなく、さらにゾル−
ゲル法による多孔質ゲルのアンモニアによる処理はこれ
が発泡体となるために実用性がないという不利がある。(Problem to be solved) However, although the silica glass disclosed in this known method contains a large amount of nitrogen, it is only stated that the annealing point of the glass is improved. This type has an oxynitride film on its surface, and is not related to silica glass blocks.
Treatment of porous gel with ammonia by the gel method has the disadvantage that it becomes a foam and is therefore impractical.
（課題を解決するための手段）
本発明はこのような不利を解決した合成石英ガラスおよ
びその製造方法に関するものであり、これは１，４００
℃における粘度が１０１０ポイズ以上、ビッカース硬度
が１，０００ｋｇ／ｍｍ’ 、ヤング率が９００ｐａ以
上であり、１，２００℃におけるで電気抵抗が１０−ａ
Ω・ｃｍ／ｃｍ’以上であることを特徴とする合成石英
ガラス、およびメチルシリケートをアンモニアの存在下
で加水分解してシリカ粒子を作り、これを原料として合
成石英ガラスを製造することを特徴とする上記した合成
石英ガラスの製造方法に関するものである。(Means for Solving the Problems) The present invention relates to a synthetic quartz glass that solves the above disadvantages and a method for manufacturing the same.
The viscosity at °C is 1010 poise or more, the Vickers hardness is 1,000 kg/mm', the Young's modulus is 900 pa or more, and the electrical resistance at 1,200 °C is 10-a.
A synthetic quartz glass characterized by having a resistance of Ωcm/cm' or more, and a synthetic quartz glass produced by hydrolyzing methyl silicate in the presence of ammonia to produce silica particles and using the silica particles as a raw material. The present invention relates to a method of manufacturing the above-described synthetic quartz glass.
すなわち、本発明者らは石英ガラスに窒素を導入して石
英ガラスを改質する方法について種々検討した結果、石
英ガラスに窒素を導入するためにはアルコキシシランを
加水分解してシリカ粒子を作り、これを溶融して石英ガ
ラスを得る、いわゆるゾル−ゲル法において、アルコキ
シシランとしてメチルシリケートを使用し、この加水分
解をアンモニアの存在下で行ない、ついでこれを加熱す
れば極微量であるけれども窒素を石英ガラス中に導入す
ることができることを見出すと共に、このようにして得
られた石英ガラスは意外にもその物性が大幅に改良され
、１，４００℃における粘度が１０１０ポイズ以上、ビ
ッカース硬度が１，０００ｋｇ／憧ｆｆ１２以上、ヤン
グ率が９０６ｐａ以上となり、１，２００℃における電
気抵抗が１Ｏ−８Ω・ｃｍ／ｃｍ２以上のものになると
いうことを確認して本発明を完成させた。That is, the present inventors have studied various methods of modifying silica glass by introducing nitrogen into quartz glass, and have found that in order to introduce nitrogen into quartz glass, alkoxysilane is hydrolyzed to produce silica particles. In the so-called sol-gel method, in which silica glass is obtained by melting this, methyl silicate is used as the alkoxysilane, and this hydrolysis is carried out in the presence of ammonia, which is then heated to release nitrogen, although it is a very small amount. In addition to discovering that the quartz glass can be incorporated into quartz glass, the physical properties of the quartz glass thus obtained are surprisingly improved, with a viscosity of 1010 poise or more at 1,400°C and a Vickers hardness of 1. The present invention was completed by confirming that the electric resistance at 1,200° C. was 10-8 Ω·cm/cm2 or more, and the Young's modulus was 906 pa or more.
以下にこれをさらに詳細する。This will be explained in further detail below.
（作用）
本発明の合成石英ガラスはその中に微量の窒素を導入す
ることによってその物性値を大幅に改良したものである
が、石英ガラス中に窒素を導入するのはメチルシリケー
トをアンモニアの存在下で加水分解すればよい。(Function) The synthetic quartz glass of the present invention has its physical properties significantly improved by introducing a trace amount of nitrogen into it. However, the introduction of nitrogen into the quartz glass is due to the presence of ammonia in the methyl silicate. It can be hydrolyzed below.
本発明の合成石英ガラスはいわゆるゾル−ゲル法で作れ
ばよいが、これはメチルシリケートをアンモニアの存在
下で加水分解してゾル状シリカ粒子を作り、ついでこれ
を乾燥してゲル状シリカ粒子としたのち、加熱処理すれ
ばよい。The synthetic silica glass of the present invention may be produced by the so-called sol-gel method, which involves hydrolyzing methyl silicate in the presence of ammonia to produce sol-like silica particles, which are then dried to form gel-like silica particles. After that, heat treatment may be performed.
この加水分解時に系内に存在させるアンモニアの量は目
的とする合成石英ガラス中に導入すべき窒素量によって
調節すればよいが、本発明の目的とする合成石英ガラス
中に導入させるべき窒素量がｌθ〜１．０００ｐｐｍ重
量％という極微量のものでよいということから、これは
メチリシリケート １００重量部に対して５０〜５００
重量部とすればよく、この加水分解はこのアンモニアの
存在下に常温で行なわせればよい。この加水分解で得ら
れたゾル状のシリカ粒子は遠心脱水器で脱水後、例えば
窒素ガス気流中において１５０℃で乾燥してゲル状シリ
カ粒子としたのち、酸素ガス中において室温から１．２
００℃まで１０時間程度加熱してガラス化すればよいが
、この石英ガラスはさらに真空中において室温から１，
５００℃まで２時間、ついでｔ、ｇｏｏ℃から１，７０
０℃まで１０時間程度加熱して焼結させることがよい。The amount of ammonia present in the system during this hydrolysis may be adjusted depending on the amount of nitrogen to be introduced into the synthetic quartz glass aimed at, but the amount of nitrogen to be introduced into the synthetic quartz glass aimed at in the present invention Since a very small amount of lθ ~ 1.000 ppm by weight is sufficient, this is 50 to 500 parts by weight per 100 parts by weight of methylisilicate.
The hydrolysis may be carried out in the presence of ammonia at room temperature. The sol-like silica particles obtained by this hydrolysis are dehydrated in a centrifugal dehydrator, dried at 150°C in a nitrogen gas stream to form gel-like silica particles, and then heated in oxygen gas from room temperature to 1.2°C.
It can be vitrified by heating to 00℃ for about 10 hours, but this quartz glass can be further heated from room temperature to 1,000℃ in a vacuum.
2 hours to 500℃, then 1,70℃ from t, goo℃
It is preferable to sinter by heating to 0° C. for about 10 hours.
このようにして得られた合成石英ガラスは１０〜１ 、
０００ｐｐｍの窒素が導入されたものとなるので、この
ものはその物性値が市販の合成石英ガラス、天然石英ガ
ラスにくらべて大幅に改良されたものとなり、その１，
４００℃における粘性値が１０１０ポイズ以上、ビッカ
ース硬度が１ 、０００ｋｇ／ｍｍ２以上、ヤング率が
９０６ｐａ以上となり、１，２００℃における電気抵抗
値も１Ｏ−６Ω・ｃｍ／ｃｍ’以上になるという優れた
物性値を示すので、これは例えば半導体工業におけるシ
リコン引上げ用るつぼ、拡散プロセスチューブ、拡散治
具、洗浄槽用として有用とされるほか、高温絶縁体や各
種機器の基板ガラスとしても有用とされる。The synthetic quartz glass obtained in this way has a crystallinity of 10 to 1,
000 ppm of nitrogen has been introduced, so the physical properties of this product are significantly improved compared to commercially available synthetic quartz glass and natural quartz glass.
It has excellent properties such as a viscosity value of 1010 poise or more at 400°C, a Vickers hardness of 1,000 kg/mm2 or more, a Young's modulus of 906 pa or more, and an electrical resistance value of 10-6 Ωcm/cm' or more at 1,200°C. Because it exhibits physical properties, it is useful, for example, in silicon pulling crucibles, diffusion process tubes, diffusion jigs, and cleaning tanks in the semiconductor industry, as well as as high-temperature insulators and substrate glass for various devices. .
（実施例） つぎに本発明の実施例、比較例をあげる。(Example) Next, examples of the present invention and comparative examples will be given.
実施例、比較例１〜２
５００Ｊ２のグラスライニング反応器に半導体グレード
のアンモニア水１３０１と超純水３１を入れて０℃に冷
却し、テフロンコート撹拌棒で攪拌しながら、ここにメ
チルシリケート（蒸留品） ２６５ｋｇを滴下し、滴
下終了後還水脱水器で脱水してゾル状シリカ粉１０５ｋ
ｇを作った。Examples, Comparative Examples 1 to 2 Semiconductor grade ammonia water 1301 and ultrapure water 31 were placed in a 500J2 glass-lined reactor, cooled to 0°C, and while stirring with a Teflon-coated stirring rod, methyl silicate (distilled) was added to the reactor. Product) 265 kg was dropped, and after the drop was finished, it was dehydrated in a recirculating water dehydrator to obtain 105 kg of sol-form silica powder.
I made g.
ついでこのシリカ粉を窒素ガス中において１５０℃で乾
燥してゲル状シリカ粉としてのち、これを石英炉芯管に
詰め、酸素ガス気流中で室温から１．２００℃昇温加熱
し、この２５ｋｇを高純度黒鉛ケースに詰めて真空中で
室温から １，５００℃まで２時間、さらに１，５００
℃から１，７００℃まで１０時間かけて昇温して焼結さ
せた。Next, this silica powder was dried at 150°C in nitrogen gas to form a gel-like silica powder, which was then packed into a quartz furnace tube and heated to 1.200°C from room temperature in an oxygen gas stream. Packed in a high-purity graphite case and heated in vacuum from room temperature to 1,500℃ for 2 hours, then heated to 1,500℃ for 2 hours.
Sintering was carried out by raising the temperature from 1,700°C over 10 hours.
つぎに、この焼結体を粉砕して粒度を５０〜８０メツシ
ユに揃え、ＨＣＩ、ＨＦで洗浄し、乾燥後磁選機にかけ
てから高純度黒鉛ケースに詰め直し、１０−’トールの
真空中で室温から１，８００℃まで２０時間かけて昇温
したところ、３００ａ＋ａ＋ΦＸ ６００ＩＩ１ｍｌの
透明な合成石英インゴットが得られたが、この石英ガラ
スにはその５００ｐｐｍの窒素が導入されており、この
物性値を測定したところ、第１表に示した通りの結果が
得られた。Next, this sintered body is crushed to have a particle size of 50 to 80 mesh, washed with HCI and HF, dried, passed through a magnetic separator, and then packed into a high-purity graphite case in a vacuum of 10-'Torr at room temperature. When the temperature was raised from 1,800℃ to 1,800℃ over 20 hours, a transparent synthetic quartz ingot of 300a+a+ΦX 600II 1ml was obtained, but 500ppm of nitrogen had been introduced into this quartz glass, and its physical properties were measured. However, the results shown in Table 1 were obtained.
しかし、比較のために市販の合成石英ガラス・スプラシ
イル［西独ヘラウス社製商品名］ （比較例１）および
市販の天然石英ガラス・へラルックス〔西独ヘラウス社
製商品名］ （比較例２）についての物性値しらべたと
ころ、第１表に併記したとおりの結果が得られ、本発明
の合成石英ガラスがすぐれた物性値をもつものであるこ
とが確認された。However, for comparison, commercially available synthetic quartz glass Splashil [trade name manufactured by Heraus AG, West Germany] (Comparative Example 1) and commercially available natural quartz glass Heralux [trade name manufactured by Heraus AG, West Germany] (Comparative Example 2). When the physical properties were examined, the results shown in Table 1 were obtained, confirming that the synthetic quartz glass of the present invention has excellent physical properties.
手 続 ネ甫 正 書 １、事件の表示 昭和６３年特許願第３２５６２６号 発明の名称 合成石英ガラスおよびその製造方法 補正をする者 事件との関係 特許出願人 名称 信越化学工業株式会社hand Continued Neho Positive book 1. Display of incident Patent Application No. 325626 of 1988 name of invention Synthetic quartz glass and its manufacturing method person who makes corrections Relationship to the case Patent applicant Name Shin-Etsu Chemical Co., Ltd.
Claims (1)
上、ビッカース硬度が１，０００ｋｇ／ｍｍ＾２以上、
ヤング率が９０ＧＰａ以上であり、１，２００℃におけ
る電気抵抗が１０＾−＾８Ω・ｃｍ／ｃｍ＾２以上であ
ることを特徴とする合成石英ガラス。 ２、メチルシリケートをアンモニアの存在下で加水分解
してシリカ粒子を作り、これを原料として合成石英ガラ
スを製造することを特徴とする請求項１に記載の合成石
英ガラスの製造方法。[Claims] 1. Viscosity at 1,400°C is 10^1^0 poise or more, Vickers hardness is 1,000 kg/mm^2 or more,
Synthetic quartz glass characterized by having a Young's modulus of 90 GPa or more and an electrical resistance at 1,200° C. of 10^-^8 Ω·cm/cm^2 or more. 2. The method for producing synthetic quartz glass according to claim 1, characterized in that methyl silicate is hydrolyzed in the presence of ammonia to produce silica particles, and synthetic quartz glass is produced using the particles as a raw material.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32562688A JPH02172832A (en) | 1988-12-22 | 1988-12-22 | Synthesized quartz glass and production thereof |
| US07/404,585 US4979973A (en) | 1988-09-13 | 1989-09-08 | Preparation of fused silica glass by hydrolysis of methyl silicate |
| EP89402471A EP0360659B1 (en) | 1988-09-13 | 1989-09-11 | Synthetic fused silica glass and method for the preparation thereof |
| DE8989402471T DE68905735T2 (en) | 1988-09-13 | 1989-09-11 | SYNTHETIC MOLTEN QUARTZ GLASS AND METHOD FOR THE PRODUCTION THEREOF. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32562688A JPH02172832A (en) | 1988-12-22 | 1988-12-22 | Synthesized quartz glass and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02172832A true JPH02172832A (en) | 1990-07-04 |
| JPH0450263B2 JPH0450263B2 (en) | 1992-08-13 |
Family
ID=18178958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32562688A Granted JPH02172832A (en) | 1988-09-13 | 1988-12-22 | Synthesized quartz glass and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02172832A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0340929A (en) * | 1989-07-06 | 1991-02-21 | Shinetsu Sekiei Kk | Synthetic quartz glass member having excellent heat resistance and workability |
| JPH0394843A (en) * | 1989-09-04 | 1991-04-19 | Shin Etsu Chem Co Ltd | Synthetic quartz glass crucible and its production |
| EP1026289A1 (en) * | 1998-07-31 | 2000-08-09 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass crucible for pulling up silicon single crystal and process for producing the same |
-
1988
- 1988-12-22 JP JP32562688A patent/JPH02172832A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0340929A (en) * | 1989-07-06 | 1991-02-21 | Shinetsu Sekiei Kk | Synthetic quartz glass member having excellent heat resistance and workability |
| JPH0394843A (en) * | 1989-09-04 | 1991-04-19 | Shin Etsu Chem Co Ltd | Synthetic quartz glass crucible and its production |
| EP1026289A1 (en) * | 1998-07-31 | 2000-08-09 | Shin-Etsu Quartz Products Co., Ltd. | Quartz glass crucible for pulling up silicon single crystal and process for producing the same |
| EP1026289A4 (en) * | 1998-07-31 | 2008-12-24 | Shinetsu Quartz Prod | Quartz glass crucible for pulling up silicon single crystal and process for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0450263B2 (en) | 1992-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5302556A (en) | Synthetic silica glass articles and a method for manufacturing them | |
| JP3092675B2 (en) | Oxynitride glass and method for producing the same | |
| JPH0826742A (en) | Synthetic quartz glass powder | |
| JPH07300324A (en) | Production of heat-resistant synthetic quartz glass | |
| JPH02172832A (en) | Synthesized quartz glass and production thereof | |
| JPH03109223A (en) | Quartz glass and production thereof | |
| JPH01183421A (en) | Production of quartz glass | |
| JP2732643B2 (en) | Manufacturing method of high purity and high viscosity silica glass | |
| JP2002160930A (en) | Porous quartz glass and method of producing the same | |
| JPH0717389B2 (en) | Method for producing synthetic quartz glass | |
| JPH0517172B2 (en) | ||
| JP4297578B2 (en) | Method for producing opaque quartz glass | |
| JPH04224135A (en) | Foamed glass and its manufacture | |
| JPH11268923A (en) | Production of silica gel, synthetic quartz glass powder and quartz glass molding | |
| JP3371399B2 (en) | Cristobalite crystalline phase-containing silica glass and method for producing the same | |
| JPH05254859A (en) | Tool for heat-treatment of semiconductor wafer and its production | |
| JP3114936B2 (en) | High heat resistant synthetic quartz glass | |
| JPH0733447A (en) | Production of nitrogen doped glass | |
| JPH0776093B2 (en) | Quartz glass manufacturing method | |
| JPH07115881B2 (en) | Quartz glass material for heat treatment | |
| JPH11236209A (en) | Silica gel, synthetic quartz glass powder, quartz glass molding and their production | |
| JPH0394843A (en) | Synthetic quartz glass crucible and its production | |
| JP3689926B2 (en) | High-purity synthetic quartz glass powder, method for producing the same, and high-purity synthetic quartz glass molded body using the same | |
| JPH05208838A (en) | Producrtion of silica glass crucible | |
| JPH02229735A (en) | Quartz glass member |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20070813 Year of fee payment: 15 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080813 Year of fee payment: 16 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090813 Year of fee payment: 17 |
|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090813 Year of fee payment: 17 |