JPH01215728A - Production of quartz glass - Google Patents
Production of quartz glassInfo
- Publication number
- JPH01215728A JPH01215728A JP3904488A JP3904488A JPH01215728A JP H01215728 A JPH01215728 A JP H01215728A JP 3904488 A JP3904488 A JP 3904488A JP 3904488 A JP3904488 A JP 3904488A JP H01215728 A JPH01215728 A JP H01215728A
- Authority
- JP
- Japan
- Prior art keywords
- sol
- quartz glass
- gel
- cristobalite
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000002425 crystallisation Methods 0.000 claims abstract description 21
- 230000008025 crystallization Effects 0.000 claims abstract description 21
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 17
- -1 alkyl silicate Chemical compound 0.000 claims abstract description 15
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000003301 hydrolyzing effect Effects 0.000 claims description 4
- 150000001339 alkali metal compounds Chemical group 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000003054 catalyst Substances 0.000 abstract description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 10
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 abstract description 9
- 238000003980 solgel method Methods 0.000 abstract description 6
- 230000002378 acidificating effect Effects 0.000 abstract description 5
- 239000011780 sodium chloride Substances 0.000 abstract description 4
- 239000001307 helium Substances 0.000 abstract description 3
- 229910052734 helium Inorganic materials 0.000 abstract description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 18
- 239000000499 gel Substances 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 238000011282 treatment Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 230000007062 hydrolysis Effects 0.000 description 5
- 238000006460 hydrolysis reaction Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
- C03C1/006—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels to produce glass through wet route
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/12—Other methods of shaping glass by liquid-phase reaction processes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
- C03B2201/50—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with alkali metals
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は石英ガラスの製造方法、特には実質的に泡およ
びOH基を含まないことからレンズ、プリズマなどの光
学器機用、半導体工業用のルツボ、炉芯管などに有用と
される石英ガラスをゾルゲル法で製造する方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method for manufacturing quartz glass, particularly for use in optical instruments such as lenses and prisms, and in the semiconductor industry since it does not substantially contain bubbles and OH groups. The present invention relates to a method for producing quartz glass, which is useful for crucibles, furnace tubes, etc., using a sol-gel method.
(従来の技術とその解決すべき問題点)石英ガラスの製
造方法については、アルキルシリケートをエタノールな
どの有機溶剤に溶解し。(Conventional technology and problems to be solved) The method for manufacturing quartz glass involves dissolving alkyl silicate in an organic solvent such as ethanol.
塩酸などの酸性触媒またはアンモニアなどの塩基性触媒
の存在下で加水分解してシリカゾルを作り。Silica sol is produced by hydrolysis in the presence of an acidic catalyst such as hydrochloric acid or a basic catalyst such as ammonia.
これを脱水、縮合してシリカゲルとし、ついで乾燥焼成
して石英ガラスとする方法がいわゆるゾル−ゲル法とし
て知られている。The method of dehydrating and condensing this to obtain silica gel, and then drying and firing it to obtain quartz glass is known as the so-called sol-gel method.
しかし、この方法で得られる石英ガラスは微細な泡を含
んだものになり易く、かつはOH基を500〜1,0O
OPP■含むものであるために泡の存在を嫌う光学用途
、耐熱性の要求される半導体工業用には適さないという
品質上の問題があるため、これについては特別に脱泡処
理、脱OH処理を行なう必要がある。However, the silica glass obtained by this method tends to contain fine bubbles and has 500 to 1,000 OH groups.
Because it contains OPP, there is a quality problem in that it is not suitable for optical applications where the presence of bubbles is averse, and for semiconductor industry applications that require heat resistance, so special degassing and deOH treatments are performed for this purpose. There is a need.
しかして、この脱泡処理についてはゾルゲル法で得られ
た乾燥ゲルをヘリウムガス雰囲気中で熱処理する方法が
知られており、脱OH処理についてはこの乾燥ゲルを塩
素ガス雰囲気中で800℃以上に熱処理する方法が行わ
れているが、この脱泡処理と脱OH処理を同時に行なお
うとすると複雑かつ精密な工程管理が必要とされるし、
この脱OH処理には有毒ガスである塩素を高温で取扱う
ものであることから作業的、装置的に厳しい安全管理が
要求されるし、廃ガス処理設備などの付帯設備が必要と
されるという不利がある。For this defoaming treatment, a method is known in which dry gel obtained by the sol-gel method is heat treated in a helium gas atmosphere, and for OH removal treatment, this dry gel is heated to 800°C or higher in a chlorine gas atmosphere. A heat treatment method is used, but if you try to perform this degassing treatment and deOH treatment at the same time, complicated and precise process control is required.
Since this OH removal process involves handling chlorine, which is a toxic gas, at high temperatures, it requires strict safety management in terms of work and equipment, and has the disadvantage of requiring ancillary equipment such as waste gas treatment equipment. There is.
他方、実質的に気泡およびOH基を有しない石英ガラス
の製造については四塩化けい素などのハロゲン化けい素
を酸化して得た二酸化けい素粉をアルカリ金属塩などの
結晶化促進剤の存在下に熱処理してクリストバライトの
焼結体を作り、ついでこれを減圧下に高温処理して脱ア
ルカリと共にこの焼結体をガラス化して石英ガラスとす
る方法が知られており(特開昭61−58823号、同
61−58824号、同61−58832号、同61−
63537号、同62−30633号、同62−306
34号各公報参照)、これによれば比較的容易に気泡お
よびOH基を含まない石英ガラスを得ることができるけ
れども、この方法では出発原料が二酸化けい素粉末とさ
れており、この二酸化けい素粉末に対する結晶化促進剤
の添加が結晶化促進剤溶液の含浸によって行なわれるた
めに、この結晶化促進剤の二酸化けい素粉末に対する濃
度が二酸化けい素粉末の粒径によって異なり、必然的に
そのクリストバライト化にむらが生じるし、このクリス
トバライト化が粒子単位で進むために得られるクリスト
バライトが粒径の大きいものとなり、この焼結体を冷却
するときに220〜275℃におけるβ相→α相への相
転移時における体積変化に伴なう歪によってクラックが
入るという不利があるので、これには焼結で得たクリス
トバライトをその相移転温度以上に保ったまへでつぎの
工程に移す必要があるという工業的な欠点がある。On the other hand, for the production of quartz glass that is substantially free of bubbles and OH groups, silicon dioxide powder obtained by oxidizing silicon halides such as silicon tetrachloride is used in the presence of a crystallization accelerator such as an alkali metal salt. A method is known in which a sintered body of cristobalite is produced by heat treatment, and then this is treated at high temperature under reduced pressure to dealkalize and vitrify this sintered body to produce quartz glass (Japanese Patent Application Laid-Open No. 1983-1982). No. 58823, No. 61-58824, No. 61-58832, No. 61-
No. 63537, No. 62-30633, No. 62-306
(Refer to each publication No. 34) According to this method, it is possible to obtain quartz glass that does not contain bubbles and OH groups relatively easily, but in this method, the starting material is silicon dioxide powder, and this silicon dioxide powder is used as a starting material. Since the crystallization promoter is added to the powder by impregnating it with a crystallization promoter solution, the concentration of the crystallization promoter in the silicon dioxide powder varies depending on the particle size of the silicon dioxide powder, and inevitably the cristobalite This cristobalite formation progresses on a particle-by-particle basis, resulting in large grain sizes of the cristobalite obtained, and when the sintered body is cooled, the phase changes from β phase to α phase at 220 to 275°C. There is a disadvantage in that cracks occur due to the strain caused by the volume change during the transition, so the cristobalite obtained by sintering must be kept above its phase transition temperature before being transferred to the next process. There are some drawbacks.
(発明の構成)
本発明はこのような不利を解決した石英ガラスの製造方
法に関するものであり、これはアルキルシリケートを加
水分解して得たゾルに、このゾルに均一に溶解する結晶
化促進剤を添加してからゲル化し、このゲルを乾燥後熱
処理してクリストバライトの緻密な焼結体とし、ついで
この焼結体を真空中あるいは不活性ガス雰囲気下で加熱
して透明ガラス化することを特徴とするものである。(Structure of the Invention) The present invention relates to a method for producing quartz glass that solves these disadvantages, and this invention involves adding a crystallization promoter to a sol obtained by hydrolyzing an alkyl silicate, which is uniformly dissolved in the sol. is added and gelled, this gel is dried and heat treated to form a dense sintered body of cristobalite, and then this sintered body is heated in a vacuum or under an inert gas atmosphere to form transparent vitrification. That is.
すなわち、本発明者らは実質的に気泡およびOH基を含
有しない石英ガラスをゾルゲル法で製造する方法につい
て種々検討した結果、結晶化促進剤を溶液とし、これを
石英ガラスの前駆体であるアルキルシリケートの加水分
解で得られるゾルに添加すると結晶化促進剤を極めて容
易にかつ完全にゾル中に均一に添加することができるの
で、これをゲル化させたものを乾燥後熱処理すると結晶
化促進剤が分子レベルで均一に分散された、均一で緻密
なりリストパライト焼結体が得られること、このクリス
トバライトが非常に細かい緻密な焼結体として得られる
のでこのものはβ相→α相への相転移時にもクラック発
生で割れることがなくなり、室温まで冷却しても安定で
あること、またこのクリストバライト焼結体を真空中ま
たは不活性ガス雰囲気下で加熱すると石英ガラスにとっ
ては不純物である結晶化促進剤はこの熱処理で完全に除
去することができるほか、気泡も発生せず、OH基もな
くすることができるということを見出した。That is, the present inventors have conducted various studies on a method for producing quartz glass that is substantially free of bubbles and OH groups by the sol-gel method. When added to the sol obtained by hydrolysis of silicate, the crystallization accelerator can be added very easily and completely uniformly into the sol, so if the gel is dried and then heat-treated, the crystallization accelerator can be added. A homogeneous and dense listobalite sintered body in which cristobalite is uniformly dispersed at the molecular level can be obtained, and since this cristobalite is obtained as a very fine and dense sintered body, the transition from β phase to α phase occurs. It does not break due to cracking during phase transition, and is stable even when cooled to room temperature. Also, when this cristobalite sintered body is heated in a vacuum or in an inert gas atmosphere, crystallization, which is an impurity in silica glass, occurs. It has been found that the accelerator can be completely removed by this heat treatment, and that no bubbles are generated and OH groups can also be eliminated.
以下に本発明の各工程をさらに詳細に説明する。Each step of the present invention will be explained in more detail below.
本発明の方法はまずアルキルシリケートを加水分解して
ゾルを作るのであるが、これは公知の方法で行えばよく
、シたがってこれはアルキルシリケート、例えばテトラ
メトキシシラン、テトラエトキシシラン、テトライソプ
ロポキシシラン、テトラブトキシシランなどのけい酸エ
ステル1モルに水4〜20モルと有機溶剤、例えばメタ
ノール。In the method of the present invention, a sol is first prepared by hydrolyzing an alkyl silicate, which can be carried out by any known method. 1 mole of silicate ester such as silane or tetrabutoxysilane, 4 to 20 moles of water, and an organic solvent such as methanol.
エタノールなどのアルコール類を添加し、これに酸性触
媒としての塩酸、硝酸などまたは塩基性触媒としてのア
ンモニア水、ホルムアミドなどを1/100〜1モル加
え、室温で加水分解させればよい。Alcohol such as ethanol may be added, and 1/100 to 1 mole of hydrochloric acid, nitric acid, etc. as an acidic catalyst, or aqueous ammonia, formamide, etc. as a basic catalyst may be added thereto, and hydrolysis may be carried out at room temperature.
本発明の方法ではこのようにしてアルキルシリケートの
加水分解で得られたゾルに結晶化促進剤を添加するので
あるが、この結晶化促進剤の添加はこれを溶液状にして
ゾルに添加すればよい。この結晶化促進剤としてはアル
カリ金属のように蒸気圧の高い金属の化合物1例えばそ
の塩化物、水酸化物、酸化物、アルコキシドなどで上記
したアルキルシリケート、水、アルコールなどの有機溶
剤に可溶なものから選択すればよく、したがってこれに
は塩化ナトリウム、水酸化ナトリウム、炭酸水素ナトリ
ウムなどが例示されるが、これらは1〜10%程度の水
溶液として使用すればよい。In the method of the present invention, a crystallization promoter is added to the sol obtained by hydrolysis of alkyl silicate. good. Examples of crystallization accelerators include compounds of metals with high vapor pressure such as alkali metals (1), such as their chlorides, hydroxides, oxides, alkoxides, etc., which are soluble in organic solvents such as the alkyl silicates, water, and alcohols mentioned above. Therefore, sodium chloride, sodium hydroxide, sodium hydrogen carbonate, etc. are exemplified, and these may be used as an aqueous solution of about 1 to 10%.
また、この結晶化促進剤の添加量は例えば前記した特開
昭61−58823号公報に開示されている発明ではN
a成分として100〜2.OOOppmの添加が必要と
されているけれども1本発明の方法ではこれがアルキル
シリケートのゾルに溶液で均一に添加されるのでこれよ
り少量の5〜90ppm、例えば20ppmでよく、こ
れによってアルキルシリケートの加水分解で得られたゾ
ルは必要にして充分な量な結晶化促進剤を含んだものと
される。Further, the amount of the crystallization promoter added is, for example, N
100-2. Although it is necessary to add OOOppm, in the method of the present invention, it is uniformly added to the alkyl silicate sol in the form of a solution, so a smaller amount of 5 to 90 ppm, for example 20 ppm, may be used, thereby reducing the hydrolysis of the alkyl silicate. The sol obtained is said to contain a necessary and sufficient amount of crystallization promoter.
本発明の方法はこのようにして得られた結晶化促進剤を
含んだゾルをゲル化し、ついで焼結してクリストバライ
トとするのであるが、このゲルは公知の方法にしたがっ
てこのゾルに塩酸、硝酸などの酸性触媒またはアンモニ
ア水、ホルムアミドなどの塩基性触媒を添加すればよく
、これら触媒の添加量はゾルに対し1〜100%添加す
ればよく、ゲル化はこの触媒添加後、室温放置すること
によって容易に行なわせることができる。このようにし
て得たゲルは50〜80℃に加熱することによって乾燥
ゲルとしたのち、焼結することによってクリストバライ
トとされるのであるが、この焼結は乾燥ゲルを電気炉中
においてi、ooo〜1.400℃に5〜20時間加熱
すればよく、この焼結によって乾燥ゲルは緻密なりリス
トパライト焼結体とされる。なお、この焼結体は非常に
細かい緻密なものであるので、冷却時にβ相→α相への
相転移点とされる220〜275℃を経るときでも体積
変化に伴なう歪が小さく、したがってクラックを発生す
ることもないのでこのものは冷却によって常温まで冷却
することができる。In the method of the present invention, the sol containing the crystallization accelerator thus obtained is gelled and then sintered to form cristobalite. It is sufficient to add an acidic catalyst such as or a basic catalyst such as aqueous ammonia or formamide.The amount of these catalysts may be 1 to 100% based on the sol.For gelation, leave it at room temperature after adding this catalyst. This can be easily done by The gel thus obtained is made into a dry gel by heating to 50 to 80°C, and then sintered to form cristobalite. It is sufficient to heat the gel to ~1.400° C. for 5 to 20 hours, and the dry gel becomes dense through this sintering to form a listoparite sintered body. Furthermore, since this sintered body is very fine and dense, even when it passes through 220 to 275 degrees Celsius, which is the phase transition point from β phase to α phase during cooling, the strain caused by the volume change is small. Therefore, since cracks do not occur, this product can be cooled to room temperature by cooling.
本発明の方法はこのクリストバライト焼結体を溶融して
石英ガラスとするのであるが、この石英ガラスはクラス
トパライト焼結体を電気炉中に1゜800℃以上に加熱
して溶融してガラス化させればよい。この工程では前記
した工程で添加された結晶化促進剤およびその他の不純
物を揮散除去させる必要があるが、これは真空中あるい
はヘリウムなどの不活性ガス雰囲気中において行なえば
よい。このように処理するとクリストバライト焼結体は
溶融され、ガラス化されて透明な石英ガラスとされるが
、この石英ガラスはすでに焼結体から結晶化促進剤その
他の不純物が除去されているので純度の高いものになる
し、これはまたその溶融によって気泡もなく、さらには
OH基も除去されたものとなるので、実質的に気泡とO
H基を含まない透明な高純度の石英ガラスとされる。In the method of the present invention, this cristobalite sintered body is melted to produce quartz glass. All you have to do is make it In this step, it is necessary to volatilize and remove the crystallization promoter and other impurities added in the above-described step, but this may be carried out in a vacuum or in an inert gas atmosphere such as helium. When processed in this way, the cristobalite sintered body is melted and vitrified to produce transparent quartz glass, but since the crystallization accelerator and other impurities have already been removed from the sintered body, the purity of this quartz glass cannot be improved. This also means that there are no air bubbles and OH groups have been removed by the melting, so there are virtually no air bubbles and O2 groups.
It is considered to be transparent, high-purity quartz glass that does not contain H groups.
本発明の方法は上記したようにゾルゲル法においてゾル
に結晶化促進剤を添加したものであるので、ゲルのクリ
ストバライト化が容易となり、結果において実質的に気
泡、OH基を含有しない合成石英を容易に得ることがで
きるという有利性が与えられる。As described above, in the method of the present invention, a crystallization accelerator is added to the sol in the sol-gel method, so it is easy to convert the gel into cristobalite, and as a result, it is easy to produce synthetic quartz that does not substantially contain bubbles or OH groups. This gives the advantage of being able to obtain
つぎに本発明の実施例をあげる。Next, examples of the present invention will be given.
実施例1
けい酸エチル0.5モルに水5モルと塩酸0.005モ
ルを添加し加水分解して得たシリカゾルに、2.5%の
一塩化ナトリウム水溶液0.1gを添加してから0.2
Nのアンモニア水を添加しpHを3゜5に調整してシリ
カゲルを作った。Example 1 0.1 g of a 2.5% sodium monochloride aqueous solution was added to a silica sol obtained by adding 5 mol of water and 0.005 mol of hydrochloric acid to 0.5 mol of ethyl silicate and hydrolyzing it. .2
Silica gel was prepared by adding N aqueous ammonia and adjusting the pH to 3.5.
ついでこのシリカゲルを60℃で10日間乾燥したとこ
ろ、Na濃度が30PpHである乾燥ゲルが得られたの
で、これを大気中において1,350”Cまで段階的に
昇温し、1,350℃で10時間焼結したのち、200
℃/分の速度で室温まで冷却したところ、クラックの発
生することもなくり、リストパライトの緻密な焼結体が
得られた。Next, this silica gel was dried at 60°C for 10 days, and a dried gel with a Na concentration of 30PpH was obtained.The temperature of this was raised stepwise to 1,350"C in the air, and the gel was dried at 1,350"C. After sintering for 10 hours, 200
When it was cooled to room temperature at a rate of .degree. C./min, no cracks were generated, and a dense sintered body of listalite was obtained.
つぎにこの焼結体を真空加熱炉に挿入し10−4トルの
真空下で1,800℃に30分間加熱したところ、60
φX5tm+mの透明な石英ガラス体が得られ、このも
のには偏光歪計による歪点がなく、そのOH基濃度を赤
外分析法でしらべたところOI(濃度はOppmであり
、原子吸光法で測定した残留Na濃度は0 、5 pp
+s以下であった。Next, this sintered body was inserted into a vacuum heating furnace and heated to 1,800°C for 30 minutes under a vacuum of 10-4 Torr.
A transparent quartz glass body of φX5tm+m was obtained, and there was no strain point measured by a polarization strain meter, and its OH group concentration was examined by infrared analysis and found to be OI (concentration is Oppm, measured by atomic absorption spectrometry). The residual Na concentration was 0.5pp.
+s or less.
比較例1
上記した実施例における結晶化促進剤としての塩化ナト
リウムを添加しないほかは上記と同様に処理して乾燥ゲ
ルを作り、この乾燥ゲルを大気中において1,350℃
まで段階的に昇温し、1,350℃で10時間加熱して
から200℃/分の速度で室温まで冷却したところ透明
な石英ガラス体が得られたが、このものは0 、1 a
m程度の微細な泡を多数含んでいて、この泡はその約1
0%が偏光歪計で見て歪を有したものであったし、赤外
分光法によるOH濃度も570pp■であった。Comparative Example 1 A dry gel was prepared in the same manner as in the above example except that sodium chloride as a crystallization accelerator was not added.
When the temperature was raised stepwise to 1,350°C for 10 hours and then cooled to room temperature at a rate of 200°C/min, a transparent quartz glass body was obtained.
Contains many microscopic bubbles of about m size, and this bubble is about 1 of them.
0% had distortion as seen with a polarization strain meter, and the OH concentration as measured by infrared spectroscopy was 570 pp.
比較例2
けL1酸エチル0.5モル、水5モルに0.005モル
の塩酸を添加し室温で加水分解させてシリカゾルを作り
、これをpH3,5に調整してシリカゲルとし、60℃
で20日間乾燥して乾燥ゲルを作ったのち、これをボー
ルミルで粉砕して粒径20〜100μ腸の微細な石英粉
30gを作った。Comparative Example 2 0.005 mol of hydrochloric acid was added to 0.5 mol of ethyl L1 acid and 5 mol of water and hydrolyzed at room temperature to produce silica sol, which was adjusted to pH 3.5 to form silica gel and heated at 60°C.
After drying for 20 days to produce a dry gel, this was ground in a ball mill to produce 30 g of fine quartz powder with a particle size of 20 to 100 μm.
ついで、この石英粉に5%塩化ナトリウム溶液を含浸さ
せ、乾燥したところ、原子吸光法によるNa濃度が1,
200ppmである乾燥石英粉が得られたので、これを
型内にタブレット状に押しかため、1,350℃まで段
階的に昇温し、1,350℃で10時間加熱してから2
00℃/分の速度で室温まで冷却したところ、得られた
クリストバライト焼結体は割れてしまった。Next, this quartz powder was impregnated with a 5% sodium chloride solution and dried, and the Na concentration was 1.
Dry quartz powder with a concentration of 200 ppm was obtained, so it was pressed into a tablet shape in a mold, heated stepwise to 1,350°C, heated at 1,350°C for 10 hours, and then
When the cristobalite sintered body was cooled to room temperature at a rate of 00° C./min, it cracked.
Claims (1)
のゾルに均一に溶解する結晶化促進剤の存在下にゲル化
し、このゲルを乾燥後熱処理してクリストバライトの緻
密な焼結体とし、ついでこの焼結体を真空中あるいは不
活性ガス雰囲気下で加熱して透明ガラス化することを特
徴とする石英ガラスの製造方法。 2、結晶化促進剤がアルカリ金属の化合物から選択され
たものである特許請求の範囲第1項記載の石英ガラスの
製造方法。[Claims] 1. A sol obtained by hydrolyzing an alkyl silicate is gelled in the presence of a crystallization accelerator that is uniformly dissolved in the sol, and this gel is dried and then heat-treated to form a dense crystal of cristobalite. A method for producing quartz glass, which comprises forming a sintered body, and then heating the sintered body in a vacuum or an inert gas atmosphere to turn it into transparent glass. 2. The method for producing quartz glass according to claim 1, wherein the crystallization promoter is selected from alkali metal compounds.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63039044A JPH0776093B2 (en) | 1988-02-22 | 1988-02-22 | Quartz glass manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63039044A JPH0776093B2 (en) | 1988-02-22 | 1988-02-22 | Quartz glass manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01215728A true JPH01215728A (en) | 1989-08-29 |
JPH0776093B2 JPH0776093B2 (en) | 1995-08-16 |
Family
ID=12542121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63039044A Expired - Fee Related JPH0776093B2 (en) | 1988-02-22 | 1988-02-22 | Quartz glass manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0776093B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0394843A (en) * | 1989-09-04 | 1991-04-19 | Shin Etsu Chem Co Ltd | Synthetic quartz glass crucible and its production |
WO1996004210A1 (en) * | 1994-08-04 | 1996-02-15 | Hitachi Chemical Company, Ltd. | Process for producing silica glass |
CN107793021A (en) * | 2017-10-31 | 2018-03-13 | 江苏亨通光导新材料有限公司 | Controlled micro crystallization furnace core tube and quick controlled micro crystallization method suitable for preform sintering furnace |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6126524A (en) * | 1984-07-16 | 1986-02-05 | Seiko Epson Corp | Production of quartz glass |
-
1988
- 1988-02-22 JP JP63039044A patent/JPH0776093B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6126524A (en) * | 1984-07-16 | 1986-02-05 | Seiko Epson Corp | Production of quartz glass |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0394843A (en) * | 1989-09-04 | 1991-04-19 | Shin Etsu Chem Co Ltd | Synthetic quartz glass crucible and its production |
WO1996004210A1 (en) * | 1994-08-04 | 1996-02-15 | Hitachi Chemical Company, Ltd. | Process for producing silica glass |
US5871558A (en) * | 1994-08-04 | 1999-02-16 | Hitachi Chemical Company, Ltd. | Process for producing silica glass |
CN107793021A (en) * | 2017-10-31 | 2018-03-13 | 江苏亨通光导新材料有限公司 | Controlled micro crystallization furnace core tube and quick controlled micro crystallization method suitable for preform sintering furnace |
CN107793021B (en) * | 2017-10-31 | 2021-07-30 | 江苏亨通光导新材料有限公司 | Microcrystallization furnace core pipe suitable for optical fiber preform sintering furnace and rapid microcrystallization method |
Also Published As
Publication number | Publication date |
---|---|
JPH0776093B2 (en) | 1995-08-16 |
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