JPH0388359U - - Google Patents
Info
- Publication number
- JPH0388359U JPH0388359U JP14993389U JP14993389U JPH0388359U JP H0388359 U JPH0388359 U JP H0388359U JP 14993389 U JP14993389 U JP 14993389U JP 14993389 U JP14993389 U JP 14993389U JP H0388359 U JPH0388359 U JP H0388359U
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- approximately
- film
- ratio
- contained
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第１図は本考案光起電力装置の基本構造を示す
模式的断面図、第２図は光電変換効率の光劣化割
合とＳｉ−Ｈ２結合の割合の関係を、水素量をパ
ラメータとして測定した特性図である。
模式的断面図、第２図は光電変換効率の光劣化割
合とＳｉ−Ｈ２結合の割合の関係を、水素量をパ
ラメータとして測定した特性図である。
Claims (1)
- 膜中に含まれるシリコンの内、２個の水素原子
と結合しているシリコン原子の割合が約１％以下
で、且つ膜中に含まれる水素原子の割合がシリコ
ン原子に対して約２〜１０％である水素化半導体
を主たる光活性層とすることを特徴とする光起電
力装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14993389U JPH0388359U (ja) | 1989-12-26 | 1989-12-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14993389U JPH0388359U (ja) | 1989-12-26 | 1989-12-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0388359U true JPH0388359U (ja) | 1991-09-10 |
Family
ID=31696306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14993389U Pending JPH0388359U (ja) | 1989-12-26 | 1989-12-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0388359U (ja) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5886721A (ja) * | 1982-08-24 | 1983-05-24 | Konishiroku Photo Ind Co Ltd | アモルフアス半導体膜の形成方法 |
| JPS5927522A (ja) * | 1982-08-07 | 1984-02-14 | Nippon Denso Co Ltd | アモルフアス半導体薄膜の製造方法 |
| JPS6384079A (ja) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | 光起電力装置 |
-
1989
- 1989-12-26 JP JP14993389U patent/JPH0388359U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5927522A (ja) * | 1982-08-07 | 1984-02-14 | Nippon Denso Co Ltd | アモルフアス半導体薄膜の製造方法 |
| JPS5886721A (ja) * | 1982-08-24 | 1983-05-24 | Konishiroku Photo Ind Co Ltd | アモルフアス半導体膜の形成方法 |
| JPS6384079A (ja) * | 1986-09-26 | 1988-04-14 | Sanyo Electric Co Ltd | 光起電力装置 |