JPH0195769U - - Google Patents

Info

Publication number
JPH0195769U
JPH0195769U JP19164187U JP19164187U JPH0195769U JP H0195769 U JPH0195769 U JP H0195769U JP 19164187 U JP19164187 U JP 19164187U JP 19164187 U JP19164187 U JP 19164187U JP H0195769 U JPH0195769 U JP H0195769U
Authority
JP
Japan
Prior art keywords
photoelectric conversion
conversion film
back electrode
photovoltaic device
semiconductor photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19164187U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19164187U priority Critical patent/JPH0195769U/ja
Publication of JPH0195769U publication Critical patent/JPH0195769U/ja
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Description

【図面の簡単な説明】
第1図は本考案光起電力装置の一実施例を示す
模式的断面図、第2図は半導体光電変換膜に対す
る背面電極の接着強度の金属粒径依存性を示す特
性図、第3図は背面電極の抵抗値の金属粒径依存
性を示す特性図、第4図は光電変換特性のフイル
フアクタと金属粒径との関係を示す特性図、第5
図は光電変換特性の光電変換効率と金属粒径との
関係を示す特性図、である。 2……受光面電極、3……半導体光電変換膜、
4……背面電極。

Claims (1)

    【実用新案登録請求の範囲】
  1. 光入射側から見て、受光面電極、非晶質シリコ
    ンを主体とした半導体光電変換膜及び背面電極を
    この順序で配置した光起電力装置であつて、上記
    背面電極の少なくとも半導体光電変換膜界面側は
    、粒径が約1000Å以下の微粒子金属のPVD
    膜からなる光起電力装置。
JP19164187U 1987-12-16 1987-12-16 Pending JPH0195769U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19164187U JPH0195769U (ja) 1987-12-16 1987-12-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19164187U JPH0195769U (ja) 1987-12-16 1987-12-16

Publications (1)

Publication Number Publication Date
JPH0195769U true JPH0195769U (ja) 1989-06-26

Family

ID=31482544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19164187U Pending JPH0195769U (ja) 1987-12-16 1987-12-16

Country Status (1)

Country Link
JP (1) JPH0195769U (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171867A (ja) * 1982-03-31 1983-10-08 Matsushita Electric Ind Co Ltd アモルフアスシリコン太陽電池の製造方法
JPS58209169A (ja) * 1982-05-31 1983-12-06 Toshiba Corp アモルフアスシリコン太陽電池

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171867A (ja) * 1982-03-31 1983-10-08 Matsushita Electric Ind Co Ltd アモルフアスシリコン太陽電池の製造方法
JPS58209169A (ja) * 1982-05-31 1983-12-06 Toshiba Corp アモルフアスシリコン太陽電池

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