JPH038577B2 - - Google Patents

Info

Publication number
JPH038577B2
JPH038577B2 JP58135398A JP13539883A JPH038577B2 JP H038577 B2 JPH038577 B2 JP H038577B2 JP 58135398 A JP58135398 A JP 58135398A JP 13539883 A JP13539883 A JP 13539883A JP H038577 B2 JPH038577 B2 JP H038577B2
Authority
JP
Japan
Prior art keywords
oxide
tin
ctf
reaction
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58135398A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6027125A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58135398A priority Critical patent/JPS6027125A/ja
Publication of JPS6027125A publication Critical patent/JPS6027125A/ja
Publication of JPH038577B2 publication Critical patent/JPH038577B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type

Landscapes

  • Photovoltaic Devices (AREA)
JP58135398A 1983-07-25 1983-07-25 光プラズマ気相反応法 Granted JPS6027125A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58135398A JPS6027125A (ja) 1983-07-25 1983-07-25 光プラズマ気相反応法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58135398A JPS6027125A (ja) 1983-07-25 1983-07-25 光プラズマ気相反応法

Publications (2)

Publication Number Publication Date
JPS6027125A JPS6027125A (ja) 1985-02-12
JPH038577B2 true JPH038577B2 (https=) 1991-02-06

Family

ID=15150778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58135398A Granted JPS6027125A (ja) 1983-07-25 1983-07-25 光プラズマ気相反応法

Country Status (1)

Country Link
JP (1) JPS6027125A (https=)

Also Published As

Publication number Publication date
JPS6027125A (ja) 1985-02-12

Similar Documents

Publication Publication Date Title
US6013338A (en) CVD apparatus
US4735821A (en) Method for depositing material on depressions
JPH0752718B2 (ja) 薄膜形成方法
JPS6237527B2 (https=)
JPS5930130B2 (ja) 気相成長方法
JP2003017422A (ja) 半導体装置の製造方法及び半導体装置の製造装置
KR970067623A (ko) 할로겐 도핑된 산화 실리콘막의 막 안정성 개선을 위한 방법 및 그 장치
JPS59198718A (ja) 気相法による被膜作製方法
JPH038577B2 (https=)
JPH0149004B2 (https=)
JPH07504535A (ja) 圧電性基体を半導体材料で被覆する方法およびこの被覆方法を含む小滴エゼクタ装置の製造方法
JPH0557732B2 (https=)
US4719122A (en) CVD method and apparatus for forming a film
JP3018627B2 (ja) 絶縁膜の製造方法
JP3086424B2 (ja) 層間絶縁膜の作製方法
JP2003041372A (ja) 大気圧プラズマ処理装置及び大気圧プラズマ処理方法
JPS6027121A (ja) 光ｃｖｄ装置
JPS6027124A (ja) 光プラズマ気相反応法
JPS6246515A (ja) 薄膜形成方法及びその装置
KR20020054907A (ko) 플라즈마 증착장비 및 이를 이용한 증착막 형성방법
JP2004099994A (ja) ガラス膜の形成方法
JP3697482B2 (ja) 絶縁膜生成方法およびその装置
JPS6240377A (ja) 窒化アンチモンの作製方法
JP3167995B2 (ja) 層間絶縁膜の作製方法
JPH1048438A (ja) 石英光導波路