JPH0381232B2 - - Google Patents

Info

Publication number
JPH0381232B2
JPH0381232B2 JP60150097A JP15009785A JPH0381232B2 JP H0381232 B2 JPH0381232 B2 JP H0381232B2 JP 60150097 A JP60150097 A JP 60150097A JP 15009785 A JP15009785 A JP 15009785A JP H0381232 B2 JPH0381232 B2 JP H0381232B2
Authority
JP
Japan
Prior art keywords
bit line
transistors
potential
channel
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60150097A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6212992A (ja
Inventor
Masao Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60150097A priority Critical patent/JPS6212992A/ja
Priority to US06/879,782 priority patent/US4791616A/en
Priority to KR1019860005399A priority patent/KR900006191B1/ko
Priority to EP86109352A priority patent/EP0209069B1/en
Priority to DE8686109352T priority patent/DE3675445D1/de
Publication of JPS6212992A publication Critical patent/JPS6212992A/ja
Publication of JPH0381232B2 publication Critical patent/JPH0381232B2/ja
Granted legal-status Critical Current

Links

JP60150097A 1985-07-10 1985-07-10 半導体記憶装置 Granted JPS6212992A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60150097A JPS6212992A (ja) 1985-07-10 1985-07-10 半導体記憶装置
US06/879,782 US4791616A (en) 1985-07-10 1986-06-27 Semiconductor memory device
KR1019860005399A KR900006191B1 (ko) 1985-07-10 1986-07-03 반도체 기억장치
EP86109352A EP0209069B1 (en) 1985-07-10 1986-07-09 Semiconductor memory device
DE8686109352T DE3675445D1 (de) 1985-07-10 1986-07-09 Halbleiterspeicheranordnung.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60150097A JPS6212992A (ja) 1985-07-10 1985-07-10 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6212992A JPS6212992A (ja) 1987-01-21
JPH0381232B2 true JPH0381232B2 (enrdf_load_stackoverflow) 1991-12-27

Family

ID=15489445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60150097A Granted JPS6212992A (ja) 1985-07-10 1985-07-10 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6212992A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6330178B1 (en) 1996-02-28 2001-12-11 Hitachi, Ltd. Ferroelectric memory device
US6097623A (en) * 1996-02-28 2000-08-01 Hitachi, Ltd. Ferroelectric memory device having two columns of memory cells precharged to separate voltages
US6545902B2 (en) 1998-08-28 2003-04-08 Hitachi, Ltd. Ferroelectric memory device
JP4901645B2 (ja) * 2007-08-23 2012-03-21 三洋電機株式会社 冷却ファン取付構造及びそれを用いた投写型映像表示装置並びに電子機器

Also Published As

Publication number Publication date
JPS6212992A (ja) 1987-01-21

Similar Documents

Publication Publication Date Title
KR0177776B1 (ko) 고집적 반도체 메모리 장치의 데이타 센싱회로
US5023841A (en) Double stage sense amplifier for random access memories
US4916671A (en) Semiconductor memory device having sense amplifier having improved activation timing thereof and operating method thereof
US4791616A (en) Semiconductor memory device
KR910009442B1 (ko) 반도체 기억장치
JP2685357B2 (ja) 半導体記憶装置
KR100256120B1 (ko) 고속 감지 증폭기
JPH0762955B2 (ja) ダイナミック型ランダムアクセスメモリ
US5416371A (en) Sense system for dynamic random access memory
JPH04114395A (ja) 半導体記憶回路
KR940004515B1 (ko) 다이나믹형 반도체 메모리장치
JPH08212780A (ja) ダイナミックランダムアクセスメモリ装置
US6292417B1 (en) Memory device with reduced bit line pre-charge voltage
JP2008140529A (ja) 半導体記憶装置
JP2002198499A (ja) 半導体記憶装置
US11830569B2 (en) Readout circuit, memory, and method of reading out data of memory
US5757707A (en) Semiconductor memory device
JPH0381232B2 (enrdf_load_stackoverflow)
JP2937719B2 (ja) 半導体記憶装置
US6188601B1 (en) Ferroelectric memory device having single bit line coupled to at least one memory cell
JP3904359B2 (ja) 半導体ｍｏｓ／バイポーラ複合トランジスタを利用した半導体メモリ素子
JP3503980B2 (ja) データ読出し用半導体集積回路
JPH0644779A (ja) 半導体ダイナミックｒａｍ装置
JP3067060B2 (ja) 半導体記憶装置
JPH054753B2 (enrdf_load_stackoverflow)