JPH0378787B2 - - Google Patents

Info

Publication number
JPH0378787B2
JPH0378787B2 JP9794084A JP9794084A JPH0378787B2 JP H0378787 B2 JPH0378787 B2 JP H0378787B2 JP 9794084 A JP9794084 A JP 9794084A JP 9794084 A JP9794084 A JP 9794084A JP H0378787 B2 JPH0378787 B2 JP H0378787B2
Authority
JP
Japan
Prior art keywords
control transistor
emitter
diffusion layer
semiconductor circuit
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9794084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60240158A (ja
Inventor
Tatsu Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9794084A priority Critical patent/JPS60240158A/ja
Publication of JPS60240158A publication Critical patent/JPS60240158A/ja
Publication of JPH0378787B2 publication Critical patent/JPH0378787B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP9794084A 1984-05-14 1984-05-14 半導体回路 Granted JPS60240158A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9794084A JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9794084A JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Publications (2)

Publication Number Publication Date
JPS60240158A JPS60240158A (ja) 1985-11-29
JPH0378787B2 true JPH0378787B2 (tr) 1991-12-16

Family

ID=14205659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9794084A Granted JPS60240158A (ja) 1984-05-14 1984-05-14 半導体回路

Country Status (1)

Country Link
JP (1) JPS60240158A (tr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2631951B1 (en) 2006-08-17 2017-10-11 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US9478537B2 (en) * 2009-07-15 2016-10-25 Cree, Inc. High-gain wide bandgap darlington transistors and related methods of fabrication
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
EP2754177A1 (en) 2011-09-11 2014-07-16 Cree, Inc. High current density power module comprising transistors with improved layout
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode

Also Published As

Publication number Publication date
JPS60240158A (ja) 1985-11-29

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term