JPH0377659B2 - - Google Patents

Info

Publication number
JPH0377659B2
JPH0377659B2 JP57228687A JP22868782A JPH0377659B2 JP H0377659 B2 JPH0377659 B2 JP H0377659B2 JP 57228687 A JP57228687 A JP 57228687A JP 22868782 A JP22868782 A JP 22868782A JP H0377659 B2 JPH0377659 B2 JP H0377659B2
Authority
JP
Japan
Prior art keywords
temperature
semiconductor substrate
transparent member
wafer
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57228687A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59125621A (ja
Inventor
Minoru Inoe
Haruyoshi Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57228687A priority Critical patent/JPS59125621A/ja
Publication of JPS59125621A publication Critical patent/JPS59125621A/ja
Publication of JPH0377659B2 publication Critical patent/JPH0377659B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/42—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57228687A 1982-12-28 1982-12-28 半導体製造装置 Granted JPS59125621A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57228687A JPS59125621A (ja) 1982-12-28 1982-12-28 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57228687A JPS59125621A (ja) 1982-12-28 1982-12-28 半導体製造装置

Publications (2)

Publication Number Publication Date
JPS59125621A JPS59125621A (ja) 1984-07-20
JPH0377659B2 true JPH0377659B2 (enExample) 1991-12-11

Family

ID=16880226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57228687A Granted JPS59125621A (ja) 1982-12-28 1982-12-28 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS59125621A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796081A (en) * 1986-05-02 1989-01-03 Advanced Micro Devices, Inc. Low resistance metal contact for silicon devices
JP2611434B2 (ja) * 1989-06-23 1997-05-21 富士電機株式会社 ショットキーバリアダイオードの製造方法
SE465100B (sv) * 1989-06-30 1991-07-22 Inst Mikroelektronik Im Foerfarande och anordning foer att i en kallvaeggsreaktor behandla en kiselskiva
JP2638311B2 (ja) * 1991-01-10 1997-08-06 動力炉・核燃料開発事業団 マイクロ波高電界中における加熱温度測定装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691436A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Method for heating semiconductor substrate
JPS5754315A (en) * 1980-09-19 1982-03-31 Matsushita Electric Ind Co Ltd Preparation of semiconductor device
JPS57178316A (en) * 1981-04-27 1982-11-02 Hitachi Ltd Manufacture of semiconductor element and device therefor

Also Published As

Publication number Publication date
JPS59125621A (ja) 1984-07-20

Similar Documents

Publication Publication Date Title
US5815396A (en) Vacuum processing device and film forming device and method using same
US5098198A (en) Wafer heating and monitor module and method of operation
KR940007608B1 (ko) 진공처리 장치 및 이를 이용한 성막장치와 성막방법
US4806321A (en) Use of infrared radiation and an ellipsoidal reflection mirror
EP0092346B1 (en) Method and apparatus for heating a semiconductor substrate under reduced pressure
US20030160972A1 (en) Method and apparatus for measuring thickness of a thin oxide layer
JP3334162B2 (ja) 真空処理装置及びそれを用いた成膜装置と成膜方法
US5478609A (en) Substrate heating mechanism
CA1093216A (en) Silicon device with uniformly thick polysilicon
JP2000286207A (ja) 熱処理装置及び熱処理方法
JPH0377659B2 (enExample)
US7550366B2 (en) Method for bonding substrates and device for bonding substrates
US20230005798A1 (en) Substrate processing apparatus and substrate processing method
US4228452A (en) Silicon device with uniformly thick polysilicon
EP0452777B1 (en) Wafer heating and monitoring system and method of operation
EP0406669A2 (en) Thin film making method on semiconductor substrate and temperature controlling systems therefor
JP4451508B2 (ja) 気相成長方法
JPH029121A (ja) プラズマエッチング装置
JP2640269B2 (ja) 処理方法及び処理装置
JPH0561574B2 (enExample)
JPS63125680A (ja) 気相堆積装置
JPS59100536A (ja) マイクロ波処理装置
JP3244463B2 (ja) 真空処理装置及びそれを用いた成膜装置と成膜方法
JP2713953B2 (ja) 配線形成方法
JP2604998B2 (ja) Ｉｃ素子における配線接続方法