JPH0376030B2 - - Google Patents
Info
- Publication number
- JPH0376030B2 JPH0376030B2 JP56144393A JP14439381A JPH0376030B2 JP H0376030 B2 JPH0376030 B2 JP H0376030B2 JP 56144393 A JP56144393 A JP 56144393A JP 14439381 A JP14439381 A JP 14439381A JP H0376030 B2 JPH0376030 B2 JP H0376030B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode wiring
- contact
- thickness
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 75
- 229910000838 Al alloy Inorganic materials 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14439381A JPS5844767A (ja) | 1981-09-11 | 1981-09-11 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14439381A JPS5844767A (ja) | 1981-09-11 | 1981-09-11 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5844767A JPS5844767A (ja) | 1983-03-15 |
| JPH0376030B2 true JPH0376030B2 (pl) | 1991-12-04 |
Family
ID=15361100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14439381A Granted JPS5844767A (ja) | 1981-09-11 | 1981-09-11 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5844767A (pl) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021261521A1 (ja) * | 2020-06-26 | 2021-12-30 | 株式会社デンソー | 半導体装置およびその製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018121050A (ja) * | 2017-01-24 | 2018-08-02 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5444866A (en) * | 1977-09-16 | 1979-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
-
1981
- 1981-09-11 JP JP14439381A patent/JPS5844767A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5444866A (en) * | 1977-09-16 | 1979-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021261521A1 (ja) * | 2020-06-26 | 2021-12-30 | 株式会社デンソー | 半導体装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5844767A (ja) | 1983-03-15 |
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