JPH0372151B2 - - Google Patents
Info
- Publication number
- JPH0372151B2 JPH0372151B2 JP60147162A JP14716285A JPH0372151B2 JP H0372151 B2 JPH0372151 B2 JP H0372151B2 JP 60147162 A JP60147162 A JP 60147162A JP 14716285 A JP14716285 A JP 14716285A JP H0372151 B2 JPH0372151 B2 JP H0372151B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- semiconductor wafer
- plasma oxide
- film
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 38
- 230000001681 protective effect Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 239000011253 protective coating Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Landscapes
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14716285A JPS627846A (ja) | 1985-07-04 | 1985-07-04 | サセプタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14716285A JPS627846A (ja) | 1985-07-04 | 1985-07-04 | サセプタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS627846A JPS627846A (ja) | 1987-01-14 |
| JPH0372151B2 true JPH0372151B2 (ko) | 1991-11-15 |
Family
ID=15423990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14716285A Granted JPS627846A (ja) | 1985-07-04 | 1985-07-04 | サセプタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS627846A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6432041B1 (en) | 1998-09-09 | 2002-08-13 | Olympus Optical Co., Ltd. | Endoscope shape detecting apparatus wherein form detecting processing is controlled according to connection state of magnetic field generating means |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50747A (ko) * | 1973-05-02 | 1975-01-07 |
-
1985
- 1985-07-04 JP JP14716285A patent/JPS627846A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50747A (ko) * | 1973-05-02 | 1975-01-07 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS627846A (ja) | 1987-01-14 |
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