JPH0370784B2 - - Google Patents
Info
- Publication number
- JPH0370784B2 JPH0370784B2 JP57213693A JP21369382A JPH0370784B2 JP H0370784 B2 JPH0370784 B2 JP H0370784B2 JP 57213693 A JP57213693 A JP 57213693A JP 21369382 A JP21369382 A JP 21369382A JP H0370784 B2 JPH0370784 B2 JP H0370784B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- ion
- light
- sensitive
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000001681 protective effect Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 28
- 238000009792 diffusion process Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57213693A JPS59102154A (ja) | 1982-12-06 | 1982-12-06 | 化学的感応素子 |
| DE19833343548 DE3343548A1 (de) | 1982-12-06 | 1983-12-01 | Chemischer sensor |
| US06/557,610 US4512870A (en) | 1982-12-06 | 1983-12-02 | Chemically sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57213693A JPS59102154A (ja) | 1982-12-06 | 1982-12-06 | 化学的感応素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59102154A JPS59102154A (ja) | 1984-06-13 |
| JPH0370784B2 true JPH0370784B2 (US06650917-20031118-M00005.png) | 1991-11-08 |
Family
ID=16643420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57213693A Granted JPS59102154A (ja) | 1982-12-06 | 1982-12-06 | 化学的感応素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4512870A (US06650917-20031118-M00005.png) |
| JP (1) | JPS59102154A (US06650917-20031118-M00005.png) |
| DE (1) | DE3343548A1 (US06650917-20031118-M00005.png) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698657A (en) * | 1984-02-10 | 1987-10-06 | Sharp Kabushiki Kaisha | FET type sensor and a method for driving the same |
| GB8416994D0 (en) * | 1984-07-04 | 1984-08-08 | Emi Ltd | Gas sensor |
| US5139626A (en) * | 1985-10-02 | 1992-08-18 | Terumo Corporation | Ion concentration measurement method |
| DK626986A (da) * | 1985-12-25 | 1987-06-26 | Terumo Corp | Ionsensor |
| EP0235470B1 (en) * | 1986-01-24 | 1992-11-11 | TERUMO KABUSHIKI KAISHA trading as TERUMO CORPORATION | Ion-sensitive fet sensor |
| JPS62180263A (ja) * | 1986-02-04 | 1987-08-07 | Terumo Corp | 酸素センサ− |
| US4871442A (en) * | 1986-05-01 | 1989-10-03 | Terumo Corporation | Ion sensor |
| JPS62277547A (ja) * | 1986-05-26 | 1987-12-02 | Terumo Corp | ガスセンサ− |
| JPS6350745A (ja) * | 1986-08-20 | 1988-03-03 | Fuji Photo Film Co Ltd | 化学センサ− |
| ATE82639T1 (de) * | 1986-10-01 | 1992-12-15 | Moeller Willi Ag | Verfahren zur bestimmung des konzentrationsverhaeltnisses von lithiumionen zu natriumionen und vorrichtung zur durchfuehrung dieses verfahrens. |
| US4782302A (en) * | 1986-10-31 | 1988-11-01 | The United States Of America As Represented By The United States Department Of Energy | Detector and energy analyzer for energetic-hydrogen in beams and plasmas |
| JPS63131056A (ja) * | 1986-11-20 | 1988-06-03 | Terumo Corp | Ｆｅｔ電極 |
| JPS63131057A (ja) * | 1986-11-20 | 1988-06-03 | Terumo Corp | 酵素センサ |
| CA1315927C (en) * | 1986-12-10 | 1993-04-13 | Terumo Kabushiki Kaisha | Ion carrier membrane, and ion sensor having same |
| JPS63195557A (ja) * | 1987-02-09 | 1988-08-12 | Nippon Koden Corp | イオンセンサ用電界効果トランジスタ |
| US4786396A (en) * | 1987-06-26 | 1988-11-22 | The Washington Technology Center | Ion electrode and method of making it |
| US5192417A (en) * | 1987-09-21 | 1993-03-09 | Terumo Kabushiki Kaisha | Lithium ion sensor |
| EP0393188A4 (en) * | 1987-11-24 | 1991-01-02 | Terumo Kabushiki Kaisha | Reference electrode |
| IT1224606B (it) * | 1988-10-10 | 1990-10-04 | Eniricerche Spa | Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione |
| JP3001104B2 (ja) * | 1989-10-04 | 2000-01-24 | オリンパス光学工業株式会社 | センサー構造体及びその製造法 |
| AU2005208303A1 (en) * | 2004-01-21 | 2005-08-11 | Rosemount Analytical Inc. | Ion sensitive field effect transistor (ISFET) sensor with improved gate configuration |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3719564A (en) * | 1971-05-10 | 1973-03-06 | Philip Morris Inc | Method of determining a reducible gas concentration and sensor therefor |
| US3831432A (en) * | 1972-09-05 | 1974-08-27 | Texas Instruments Inc | Environment monitoring device and system |
| US4020830A (en) * | 1975-03-12 | 1977-05-03 | The University Of Utah | Selective chemical sensitive FET transducers |
| JPS603614B2 (ja) * | 1977-05-26 | 1985-01-29 | 株式会社クラレ | Ｆｅｔセンサーの安定化法 |
| US4273636A (en) * | 1977-05-26 | 1981-06-16 | Kiyoo Shimada | Selective chemical sensitive field effect transistor transducers |
| US4411741A (en) * | 1982-01-12 | 1983-10-25 | University Of Utah | Apparatus and method for measuring the concentration of components in fluids |
-
1982
- 1982-12-06 JP JP57213693A patent/JPS59102154A/ja active Granted
-
1983
- 1983-12-01 DE DE19833343548 patent/DE3343548A1/de active Granted
- 1983-12-02 US US06/557,610 patent/US4512870A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59102154A (ja) | 1984-06-13 |
| DE3343548C2 (US06650917-20031118-M00005.png) | 1988-04-21 |
| DE3343548A1 (de) | 1984-06-07 |
| US4512870A (en) | 1985-04-23 |
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