JPH0370483A - High heat resistance type thermoelectric generation set - Google Patents

Abstract

PURPOSE:To generate a large temperature difference at a thin film type thermoelectric element and to enhance the efficiency of thermoelectric generation by providing many thin film type thermoelectric elements in which, when one side is raised to a high temperature, the other side is lowered to a low temperature, applying heat to the high temperature side with high temperature fluid, removing heat from the low temperature side with low temperature fluid, and providing a heat insulator in the element. CONSTITUTION:Many thin film thermoelectric elements 34 each has a first thin film layer 26, a second thin film layer (high temperature side electrode) 27, a second thin film layer 28, a fourth thin film layer (low temperature side electrode) 29, and a fifth thin film layer 30, and the layer 28 has a pair of a P-type semiconductor thermoelectric material 32 and an N-type semiconductor thermoelectric material 33. Many heat insulators 41 are provided in they layer 28, hot stream passing sectional area is reduced, and the element 24 is formed to have high heat resistance type. Thus, a large temperature difference is generated in the element 34.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a high thermal resistance type thermoelectric power generation device, and more specifically, to a thermoelectric power generation device that directly converts thermal energy into electrical energy without using a turbine or a generator. The present invention relates to a thermoelectric power generation device in which the thermoelectric element of the power generation device is of a thin film type, and heat flow is focused and passes through the thermoelectric element.

[Prior Art] A conventional nuclear power generation facility that converts thermal energy into electrical energy has a configuration as shown in FIG. 20, for example.

In FIG. 20, 61 is a reactor containment vessel, 62 is a nuclear reactor, 63 is a primary system high temperature molten sodium line, 64 is an intermediate heat exchanger, 65 is a secondary system high temperature molten sodium line,
66 is a high temperature and high pressure steam generator, 67 is a steam line, 68
69 is a steam turbine, 69 is an alternator, and 70 is a power transmission line.

That is, the primary high-temperature molten sodium heated in the reactor 62 exchanges heat with the secondary high-temperature molten sodium in the intermediate heat exchanger 64, and the heat-exchanged secondary high-temperature molten sodium is converted into water in the steam generator 66. is heated to generate steam. This steam is supplied to the steam turbine 6, which rotates to rotationally drive the alternating current generator 69.
AC power is generated and supplied to the consumer through the power transmission line 70.

However, the conventional technology for converting thermal energy into electrical energy described above requires an intermediate heat exchanger 64, a steam generator 66, a steam turbine 68, a generator 69, etc., and therefore requires a large number of equipment. There are also problems in that a large number of piping and the like are required, and maintenance and inspection thereof are costly.

There are also problems with mechanical loss and noise caused by moving parts.

Therefore, in order to solve the above-mentioned problems, the present inventor invented a thermoelectric power generation device, and in particular, invented a thermoelectric power generation device having a thin film type thermoelectric element.
It has been filed as No. 918.

First, the outline of the thermoelectric power generation device of the application will be explained.

FIG. 17 is an explanatory diagram of a power generation facility using the thermoelectric power generation device, where 1 is a reactor containment vessel, 2 is a nuclear reactor, 3 is a thermoelectric power generation device to be described later, 4 is a molten sodium supply line, and 5 is a molten sodium A discharge line, 6 is an electromagnetic pump, 7 is a cooling water supply line, 8 is a cooling water discharge line, 9 is a converter that converts direct current to alternating current, and 10 is a power transmission line.

That is, high-temperature molten sodium heated to about 550°C in the nuclear reactor 2 is continuously supplied to the thermoelectric power generation device 3,
Heat the high temperature side of the thermoelectric generator 3 (described later) to approximately 450"
C and is returned to the reactor 2 from the molten sodium discharge line 5 by the electromagnetic pump 6. On the other hand, cooling water at about 25° C. flows in from the cooling water supply line 7, cools the low temperature side of the thermoelectric generator 3, which will be described later, and is discharged from the cooling water discharge line 8 at about 32° C.

As a result, an electromotive force is generated in the thermoelectric element of the thermoelectric power generation device 3, and the DC power is converted into AC power by the converter 9, and the power is transmitted from the power transmission line 10 to the consumer.

FIG. 18 is an explanatory diagram of the principle of thermoelectric power generation using the semiconductor of the thermoelectric power generation device 3, in which 11 is a P-type amorphous semiconductor thermoelectric material, 12 is an N-type amorphous semiconductor thermoelectric material, 13 is an electrical insulator, and 14 is a regular plate (+ ), 15 is electron (-), 1
6 is a conductor, 17 is a high temperature side electrical conductor, 18.19 is a low temperature side electrical conductor, and 20 is a light bulb.

The principle of this thermoelectric power generation is that, similar to the known thermocouple for temperature measurement, an electromotive force is generated between the thermoelectric materials 11.12 due to the temperature difference between the high temperature side and the low temperature side of the thermoelectric materials 11.12. When the light bulb 20 is connected to this light bulb, it lights up.

FIG. 19 is a partially cutaway front view enlarging a part of the thermoelectric generator of the thermoelectric generator 3 of FIG. 17.

The thermoelectric generator 21 includes a circular tube 23 that is a good thermal conductor and whose inner surface is in contact with high temperature molten sodium to form a flow path for the high temperature molten sodium, and a tube wall 2 of this circular tube 23.
The thermoelectric element assembly 25 has a thin film type thermoelectric element assembly 25 closely attached to the outer surface of the thermoelectric element assembly 4, and low-temperature cooling water flows in contact with the outer surface of the thermoelectric element assembly 25. Note that 22 is a tube plate.

The thermoelectric element assembly 25 includes a first thin film layer 26, a second thin film layer 26, and a second thin film layer 26.
It consists of a thin film layer 27, a third thin film layer 28, a fourth thin film layer 29, a fifth thin film layer 30, and the like.

The first thin film layer 26 is made of a thin film that is an electrically poor conductor but a thermally good conductor, such as a beryllium oxide thin film or a diamond thin film, which is closely adhered to the outer peripheral surface of the tube wall 24.

The second thin film layer 27 is made of a thin film, such as a W4 thin film, closely adhered to the outer peripheral surface of the first thin film layer 26, which acts as an electrode and is a good conductor both electrically and thermally.

The third thin film layer 28 is closely attached to the outer peripheral surface of the second thin film layer 27, and is connected to a P-type amorphous Fe5iz semiconductor thermoelectric material 32 and N via an insulator 31 that is a poor conductor both electrically and thermally. Type amorphous Fe5iz semiconductor thermoelectric material 3
It consists of a large number of thin film thermoelectric elements 34 arranged in pairs.

The fourth thin film layer 29 is made of a thin film such as a copper thin film closely adhered to the outer peripheral surface of the third thin film layer 28, which acts as an electrode and is a good conductor both electrically and thermally.

The fifth thin film layer 30 is made of a thin film such as beryllium oxide or diamond thin film that is closely adhered to the outer peripheral surface of the fourth thin film layer 29 and is an electrically poor conductor but a thermally good conductor.

Moreover, each P-type amorphous Fe of the third thin film layer 28
Si, semiconductor thermoelectric material 32 and each N-type amorphous FeS
i. The semiconductor thermoelectric material 33 is electrically connected alternately on the high temperature side and the low temperature side by the second thin film layer 27 and the fourth thin film layer 29, and is connected in series as a whole.

In the thermoelectric generator 21 configured as shown in FIG. 19, high-temperature molten sodium flows down the circular tube 23 to heat the high temperature side of each thermoelectric element 34 of the thermoelectric element assembly 25, and at the same time, each thermoelectric element 34 is cooled by cooling water, an electromotive force is generated in each thermoelectric element 34, as explained in FIG. 18, and since each thermoelectric element 34 is electrically connected in series, , DC power is obtained as the sum of the electromotive forces.

In the thermoelectric generator 21 having the thin film type thermoelectric element 34 shown in FIG. 19, since the thermoelectric element 34 is of the thin film type, the thermoelectric generator can be easily miniaturized and the amount of required materials can be reduced. and the thermoelectric element 3
4 has the advantage of having a small internal electrical resistance, allowing a correspondingly large amount of DC power to be extracted, and improving heat utilization efficiency for thermoelectric power generation.

[Problem to be solved by the invention] However, the thin film type thermoelectric element 34 shown in FIG.
Although the thermal lightning generator 21 has the above-mentioned advantages, it cannot be applied as a high-temperature fluid to heat media with poor heat transfer characteristics such as combustion gas, exhaust gas, flame, and high-temperature gas heated by a high-temperature gas furnace. Although it is a thin film, it had to be relatively thick.

However, increasing the thickness of the thermoelectric element increases the amount of material required, increases the size of the thermoelectric generator, and also increases the number of manufacturing steps and increases the need for close contact between the thermoelectric element and the electrodes. It has to be done mechanically, so
There are physical and technical limitations such as heat loss, and there are other problems such as increased costs.

The present invention attempts to solve the above problems. In other words, the present invention is applicable not only to high-temperature fluids with relatively good heat transfer properties such as molten metal, but also when using heat from high-temperature fluids with poor heat transfer properties such as gases. It is an object of the present invention to provide a high thermal resistance type thermoelectric power generating device that can generate a large temperature difference in a thermoelectric element and obtain high efficiency.

[Means for Solving the Problems] In order to achieve the above object, the present invention provides a structure in which a P-type semiconductor thin film thermoelectric material and an N-type semiconductor thin film thermoelectric material form a pair and are both electrically and thermally A large number of thin film thermoelectric elements are formed through an insulator that is a poor conductor, one side of which is a high temperature side, and the other side of which is a low temperature side, and the thin film thermoelectric element has a high temperature side. comprising electrodes provided on each side and a low temperature side, and having a flow path for flowing a high temperature fluid and a low temperature fluid separately, and applying heat to the high temperature side of the thin film thermoelectric element with the high temperature fluid, The thermoelectric power generating device is configured to remove heat from the low-temperature side of the thin film thermoelectric element by the low-temperature fluid, and includes a heat insulating section that increases thermal resistance to heat flow flowing within the thermoelectric element.

[Function] According to the present invention, a heat insulating section is provided in the portion through which heat passes, and the area through which heat passes within the thermoelectric element is substantially reduced, so that the thermoelectric element becomes a high heat resistance type, and is capable of resisting large temperatures. It makes a difference. Therefore, since the electromotive force of the thermoelectric generator depends on the temperature difference across the thermoelectric elements, a large electromotive force can be obtained.

Next, the principle of increasing the temperature difference when the thermal lightning element is made of a high thermal resistance type will be explained with reference to FIG. 13.

In FIG. 13, 51 is an electrode on the high temperature side, 52 is a thermoelectric element, and 53 is an electrode on the low temperature side.

To is the bulk temperature of the high temperature fluid, T1 is the temperature of the contact surface between the high temperature fluid and the electrode 51, T2 is the temperature of the interface between the electrode 51 and the thermoelectric element 52, and T3 is the temperature of the interface between the thermoelectric element 52 and the electrode 53. , T4 is the temperature of the contact surface between the low temperature fluid and the electrode 53, T is the bulk temperature of the low temperature fluid, and Q is the amount of heat flowing per unit time.

Here, the cross-sectional area of the electrode 51, thermoelectric element 52, and electrode 53 through which the heat flow passes is A, B, C1 thickness, respectively, Ll + jz + L], and the thermal conductivity, respectively, is kl + kZ + k.
ff, the heat transfer coefficient between the high temperature fluid and the electrode 51 is hl, the heat transfer coefficient between the low temperature fluid and the electrode 53 is h2, and in a steady state,
It is expressed as follows.

Q = Ahl (To-TI) ・・・・・・ (
1)-Chz (T4Ts) ・ ・ ・ ・
・(5) Solving equations (1) to (5) above for the temperature difference yields the following. However, the electrode 51 and the thermoelectric element 5
The thermal gap between each of the electrodes 2 and 53 is sufficiently small and can be ignored because of the close contact structure.

Here, since the electrodes 5L and 53 are both materials that conduct heat well, k+ and 3 can be considered to be substantially infinite, and the above equation (6) is simplified. In other words, from the above equations (7) and (3'), 1° the above equations (r), (2'), (3'), (4'), and (5'), When the left side and the right side are added, the left side becomes T and -T, so this is set as ΔT. That is, Ah.

2B h2 From the above equations (7) and (r), From the above equations (7) 2 and (5'), 1 Here, for the sake of simplicity, each thermal resistance is
The above equations (8), (9), and (10) are expressed as follows, respectively.

Therefore, in order to increase the power generation efficiency of the thermoelectric power generation device, it is necessary to increase the temperature difference (T2-'h) applied to the thermoelectric element 52.

For this purpose, as can be seen from the above equation (8'), it is necessary to make Y large, X small, and Z small.

That is, first, in order to increase Y, the above (11)
From the formula, k2 is decreased (the thermal conductivity of the thermoelectric element 52 is decreased), B is decreased (the cross-sectional area through which the heat flow of the thermoelectric element 52 passes is decreased), and t2 is increased (the thickness of the thermoelectric element 52 is decreased). increase). Second,
To reduce X and Z, if hl and h2 are constant,
This will increase A and C. Therefore, if the thermal conductivity of the thermoelectric element 52 is already determined to be 2 and the thickness t2, by making the area B smaller than A and C, Tz T3 can be increased.

Note that the above principle can be applied as follows.

(1) Thermal conductivity of thermoelectric elements is high (easily heat passes through)
, if a sufficient temperature difference does not occur between the high-temperature side and the low-temperature side of the thermoelectric element in a thin film and the efficiency decreases, the cross-sectional area B through which the heat flow of the thermoelectric element passes should be made smaller than A and C. to increase thermal resistance.

(2) When it is desired to reduce the thickness of the thermoelectric element due to reduction in the amount of material or manufacturing issues, the thickness t2 should be reduced in order to not reduce the power generation efficiency of the thermoelectric generator, and accordingly, Area B is also made smaller.

(3) The thermal conductivity and thickness of the thermoelectric element are within a reasonable range, but the heating medium on the high temperature side is gas, etc., and the above hl is small,
increases, and the temperature drop T on the high temperature fluid wall surface. -T,
may become large, and the temperature difference T, -T, between the high temperature side and the low temperature side of the thermoelectric element may become small. In this case, the area B is made smaller than A to make the thermal resistance Y larger, that is, y>>x.

(4) The thermal conductivity and thickness of the thermoelectric element are within reasonable ranges, but since the cooling medium on the low temperature side is gas, h2 is small and Z is large, resulting in a temperature rise Ta Ts on the wall surface of the low temperature fluid.
may become large and T2 Ts may become small. In this case, the area B is made smaller than C to make the thermal resistance Y larger, that is, Y>>Z.

〔Example〕

FIG. 1 is a cross-sectional front view showing a first embodiment of the present invention, and FIG. 2 is an enlarged view of the portion marked ■ in FIG. 1.

This first embodiment also includes the first thin film layer 26 shown in FIG.
2nd thin film layer (high temperature side electrode) 27, 3rd thin film layer 2nd, 4th
It has a thin film layer (low temperature side electrode) 29 and a fifth thin film layer 30, and the third thin film layer 28 is made of P-type amorphous FeS i z
It consists of a large number of thin film thermoelectric elements 34 in which a semiconductor thermoelectric material 32 and an N-type amorphous Fe5iz semiconductor thermoelectric material 33 form pairs.

In terms of dimensions, for example, as shown in Figure 2,
The thickness a of the third thin film layer 28 (thermoelectric material 32.33) is 0.
3++u++, the thicknesses of the second thin film layer (high temperature side electrode) 27 and the fourth thin film layer (low temperature side electrode) 29, c are both 0.
8 mm, thickness d, e of the first thin film layer 26 and the fifth thin film layer 30
It is desirable that both of them be about 0.4 mm.

Further, the third thin film layer 28, which is the thermoelectric element 34, is provided with a large number of heat insulating parts 41 to reduce the cross-sectional area through which the heat flow passes (corresponding to the area B of the thermoelectric element 52 explained in FIG. 12). are doing. That is, the thermoelectric element 34 is of a high thermal resistance type. Moreover, this heat insulating part 41 is composed of a P-type amorphous Fe5iz semiconductor thermoelectric material 32 and an N-type amorphous Pe
5t, and also acts as an electrical insulator between the semiconductor thermoelectric material 33.

The heat insulating section 41 is evacuated, sealed with a gas such as air or argon, or filled with a heat insulating material such as asbestos or glass wool.

In this way, by providing the heat insulating part 41, the thermoelectric element 34 becomes a high thermal resistance type, so as explained in the above equation (8'), Tz Tz (temperature difference effective for thermoelectric generation of the thermoelectric element 34) becomes larger, and a larger electromotive force can be obtained.

FIG. 3 shows a second embodiment of the invention. In this second embodiment, a heat insulating section 41 similar to that of the first embodiment is provided in the fourth thin film layer 29, that is, in the low temperature side electrode. Even in this case, the heat flow flowing through the thermoelectric element 34 is concentrated, and the area of the thermoelectric element 34 is substantially reduced, so that the thermoelectric element 34 becomes a high thermal resistance type.

FIG. 4 shows a third embodiment of the invention. In this third embodiment, a heat insulating section 41 similar to that of the first embodiment is provided in the second thin film layer 27, that is, in the high temperature side electrode. In this third embodiment as well, the thermoelectric element 34 is of a high thermal resistance type, as in the second embodiment.

Note that the heat insulating portion 41 may be provided in both the second thin film layer 27 and the fourth thin film layer 29.

FIG. 5 is a sectional front view showing a fourth embodiment of the present invention, and FIG. 6 is an enlarged view of the portion marked ■ in FIG.

In this fourth embodiment, the above-described heat insulating section 41 is connected to the thermoelectric element 3.
4 and the fourth thin film layer 29 (low temperature side electrode).

That is, the fourth embodiment corresponds to a combination of the first and second embodiments. By doing so, the thermoelectric element 34 becomes a more reliable high heat resistance type.

Note that the heat insulating part 41 is connected to the second thin film layer 27, the thermoelectric element 34, and the fourth
It may be provided in three parts of the thin film layer 29.

7 to 9 show a fifth embodiment of the present invention.

FIG. 7 is a partially cutaway side view with illustrations of the first thin film layer 26 and the fifth thin film layer 30 omitted;
The figure shows a state in which the second thin film layer 27 (high temperature side electrode), third thin film layer 28 (thermoelectric element 34), and fourth thin film layer 29 (low temperature side electrode) in Fig. 7 are disassembled (actually, they are laminated in close contact). FIG. 9 is a sectional front view of the fourth thin film layer 29 shown in FIG.
FIG. 3 is a cross-sectional bottom view showing only the (low-temperature side electrode).

In this fifth embodiment, the heat insulating section 41 is provided in both the third thin film layer 29 and the fourth thin film layer 29, that is, the fourth thin film layer 29
Then, make cross-shaped grooves uniformly on the film surface by masking or other methods, create a vacuum between it and the second thin film layer 27, or fill in a gas such as air or argon, or use a heat insulating material such as asbestos or glass wool. The heat insulating portion 41 is formed by filling with a material.

In the case of the fifth embodiment, as can be seen in FIG. 7, the area of the heat flow concentrating portion in close contact with the third thin film layer 28 is 1/4 of the total area, so the thermal resistance is four times as large. the result,
The same electromotive force and power generation efficiency can be obtained even if the thickness of the third thin film layer 28 is reduced to 1/4 compared to the case where there is no heat insulating section 41 at all.

10 and 11 show a sixth embodiment of the present invention.

In this sixth embodiment, the heat insulating parts 41 are made of a substantially hemispherical heat insulating material with a part of the spherical shape cut off for ease of manufacture, and the third thin film layer 28 is provided between each heat insulating part 41. It is formed. That is, by providing the heat insulating portion 41, the third thin film layer 28 (thermoelectric element) becomes a high heat resistance type.

FIG. 12 shows a seventh embodiment of the invention.

In this seventh embodiment, a spherical P-type amorphous Fe5iz semiconductor thermoelectric material 32 and an N-type amorphous Fe5iz semiconductor thermoelectric material are placed between the second thin film layer 27 (high temperature side electrode) and the fourth thin film layer 29 (low temperature side electrode). 33 are uniformly distributed with a space between them, and a heat insulating part 41 made of vacuum, gas, or heat insulating material is provided between each of these materials, and the thermal resistance of the thermoelectric element 34 is large. There is.

[Estimation example]

Based on the above-mentioned FIG. 13, as a practical example, the effect of the high thermal resistance type thermoelectric power generation device is estimated as follows.

As shown in Figure 14, To =550°C1T, =Tz
=450°c (assuming k+- to be infinite), T3=T
, =300°C (assuming k3 to be infinite), T, =1
00°C1 A=B=C=1cm”Q=10 explained in Figure 13
Assume that a steady state is reached at 0 W and tz = 0.5 mm. It is also assumed that heat transfer due to radiation can be ignored.

From the above equation (r) From the above equation (2') I = O k+ From the above (3') 2 From the above (4') equation 1 From the above (5') equation ■ Here, only the area B of the thermoelectric element 52 Suppose that becomes -B, then from equation (3'), and from equations (8), (9), and (lO) above, that is, by setting the area of thermoelectric element 52 to -,
The temperature difference applied to the thermoelectric element 52 is expressed by the above equation (3') 01
From 50°C, the formula (3') above becomes 0225°C, so
In other words, as shown in FIG. 15, it increases by 50%. Therefore, the power generation efficiency of the thermoelectric power generation device increases. Furthermore, by setting B to -, the thickness can be set to - without changing the temperature difference involved in thermoelectric power generation, that is, without reducing the electromotive force or the power generation rate. This state is shown in FIG.

(Effects of the Invention) As explained above, according to the present invention, a heat insulating portion is provided in the portion through which heat passes, and the area through which heat passes within the thermoelectric element is substantially reduced. , has a simple structure and high thermal resistance, creating a large temperature difference. Therefore, even if the heat medium has poor heat transfer characteristics, a sufficient temperature difference can be created between both ends of the thin film thermoelectric element, allowing highly efficient power generation. Therefore, only a small amount of materials are required, and the manufacturing process is simple.
Thin-film thermoelectric generators with good adhesion between each thin-film layer can be widely used for combustion gases with poor heat transfer characteristics, exhaust gases, high-temperature gases heated by high-temperature gas furnaces, and general flames. It becomes possible.

In addition, by substantially reducing the heat passing area for a heat medium with good heat transfer characteristics, the film thickness of the thin-film thermoelectric element can be made thinner without reducing the power generation efficiency of the thermoelectric generator. I can do it.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional front view showing the first embodiment of the present invention, and the second embodiment is a cross-sectional front view showing the first embodiment of the present invention.
The figure is an enlarged view of the part marked ■ in Figure 1, and Figure 3 is the second part of the present invention.
4 is a cross-sectional front view showing the third embodiment of the present invention, FIG. 5 is a cross-sectional front view showing the fourth embodiment of the present invention, and FIG. 6 is a cross-sectional front view showing the fourth embodiment of the present invention. 5 is an enlarged view of the part marked ■, FIG. 7 is a partially cutaway side view showing the fifth embodiment of the present invention, FIG. 8 is an exploded sectional front view of FIG. 7, and FIG. 9 is an exploded sectional front view of FIG. 7. FIG. 10 is a cross-sectional bottom view showing only a part of the sixth embodiment of the present invention.
11 is a partially cutaway side view showing the embodiment; FIG. 11 is a cross-sectional front view taken along cutting line XI-XI in FIG. 10; FIG. 12 is a cross-sectional front view showing a seventh embodiment of the present invention; FIG. The figure is an explanatory diagram of the principle of a high thermal resistance type thermoelectric element, Fig. 14 is an explanatory diagram of one example of trial calculation based on Fig. 13, and Fig. 15 is another one.
FIG. 16 is another explanatory diagram, and FIG. 17 is an explanatory diagram showing an example of thermoelectric power generation equipment.
Figure 8 is an explanatory diagram of the principle of thermoelectric power generation, Figure 19 is a partially cutaway front view showing an example of a thermoelectric generator using a thin film type thermoelectric element, and Figure 20 is an example of conventional technology. It is an explanatory diagram. 3...Thermoelectric generator, 2■...Thermoelectric generator, 2
6... First thin film layer, 27... Second thin film layer, 28
...Third thin film layer, 29...Fourth thin film layer, 30.
...Fifth thin film layer, 31...Insulator, 32...P
Type amorphous FeSi, semiconductor thermoelectric material, 33...
N-type amorphous Fe5iz semiconductor thermoelectric material, 34...
・Thermoelectric element, 41...insulation section.

Claims (1)

[Claims] 1. A P-type semiconductor thin film thermoelectric material and an N-type semiconductor thin film thermoelectric material are formed as a pair through an insulator that is a poor conductor both electrically and thermally. , comprising a large number of thin film thermoelectric elements whose one side is a high temperature side and the other side is a low temperature side, and comprising electrodes provided on each of the high temperature side and the low temperature side of the thin film thermoelectric element. ,Moreover,
It has flow paths through which high-temperature fluid and low-temperature fluid flow separately, and the high-temperature fluid applies heat to the high-temperature side of the thin-film thermoelectric element, and the low-temperature fluid removes heat from the low-temperature side of the thin-film thermoelectric element. 1. A high thermal resistance type thermoelectric power generation device, comprising: a heat insulating portion that increases thermal resistance to heat flow flowing within the thermoelectric element. 2. Claim 1, wherein the heat insulating portion is provided in the thin film thermoelectric element.
The high thermal resistance type thermoelectric power generating device described above. 3. The high thermal resistance type thermoelectric power generation device according to claim 1 or 2, wherein the thin film type thermoelectric element is made of a large number of thermoelectric materials, and the gaps between the thermoelectric materials serve as a heat insulating section. 4. The high heat resistance type thermoelectric power generation device according to claim 1, wherein the electrode is provided with a heat insulating section. 5. The high thermal resistance type thermoelectric power generation device according to claim 1, wherein the heat insulating portion is provided on the thin film type thermoelectric element and the electrode. 6. Claims 1, 2, and 3, wherein the heat insulating part is made of a heat insulating material.
5. The high thermal resistance type thermoelectric power generation device according to 4 or 5. 7. Claims 1, 2, 3, 4, wherein the heat insulating part is made of vacuum.
or the high thermal resistance type thermoelectric power generation device according to 5. 8. Claims 1, 2, 3, and 4, wherein the heat insulating portion is made of gas.
or the high thermal resistance type thermoelectric power generation device according to 5.