JPH0370382B2 - - Google Patents
Info
- Publication number
- JPH0370382B2 JPH0370382B2 JP57220582A JP22058282A JPH0370382B2 JP H0370382 B2 JPH0370382 B2 JP H0370382B2 JP 57220582 A JP57220582 A JP 57220582A JP 22058282 A JP22058282 A JP 22058282A JP H0370382 B2 JPH0370382 B2 JP H0370382B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- region
- substrate
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 22
- 239000003990 capacitor Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 235000012239 silicon dioxide Nutrition 0.000 description 22
- 239000000377 silicon dioxide Substances 0.000 description 22
- 238000003860 storage Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000002955 isolation Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000010354 integration Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- OFHCOWSQAMBJIW-AVJTYSNKSA-N alfacalcidol Chemical compound C1(/[C@@H]2CC[C@@H]([C@]2(CCC1)C)[C@H](C)CCCC(C)C)=C\C=C1\C[C@@H](O)C[C@H](O)C1=C OFHCOWSQAMBJIW-AVJTYSNKSA-N 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57220582A JPS59110155A (ja) | 1982-12-16 | 1982-12-16 | 半導体メモリセル |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57220582A JPS59110155A (ja) | 1982-12-16 | 1982-12-16 | 半導体メモリセル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59110155A JPS59110155A (ja) | 1984-06-26 |
| JPH0370382B2 true JPH0370382B2 (cs) | 1991-11-07 |
Family
ID=16753226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57220582A Granted JPS59110155A (ja) | 1982-12-16 | 1982-12-16 | 半導体メモリセル |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59110155A (cs) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6115362A (ja) * | 1984-06-29 | 1986-01-23 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | ダイナミツクｒａｍセル |
| JPH0296368A (ja) * | 1988-09-30 | 1990-04-09 | Ricoh Co Ltd | 半導体メモリ装置 |
| JPH02135776A (ja) * | 1988-11-17 | 1990-05-24 | Hitachi Ltd | 半導体記憶装置 |
-
1982
- 1982-12-16 JP JP57220582A patent/JPS59110155A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59110155A (ja) | 1984-06-26 |
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