JPH0367340B2 - - Google Patents

Info

Publication number
JPH0367340B2
JPH0367340B2 JP59219903A JP21990384A JPH0367340B2 JP H0367340 B2 JPH0367340 B2 JP H0367340B2 JP 59219903 A JP59219903 A JP 59219903A JP 21990384 A JP21990384 A JP 21990384A JP H0367340 B2 JPH0367340 B2 JP H0367340B2
Authority
JP
Japan
Prior art keywords
bonding
wire
lead frame
reducing gas
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59219903A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6197938A (ja
Inventor
Mitsuo Kobayashi
Osamu Usuda
Yoshihiko Sano
Koichiro Atsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59219903A priority Critical patent/JPS6197938A/ja
Priority to US06/759,273 priority patent/US4732313A/en
Priority to EP85109406A priority patent/EP0169574B1/en
Priority to DE8585109406T priority patent/DE3577371D1/de
Priority to KR1019850005537A priority patent/KR900000205B1/ko
Priority to CN85106110A priority patent/CN85106110B/zh
Publication of JPS6197938A publication Critical patent/JPS6197938A/ja
Publication of JPH0367340B2 publication Critical patent/JPH0367340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/0711—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H10W72/01551—
    • H10W72/07141—
    • H10W72/07173—
    • H10W72/075—
    • H10W72/07511—
    • H10W72/07521—
    • H10W72/07532—
    • H10W72/07541—
    • H10W72/50—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5449—
    • H10W72/884—
    • H10W90/736—
    • H10W90/756—

Landscapes

  • Wire Bonding (AREA)
JP59219903A 1984-07-27 1984-10-19 半導体素子の組立方法 Granted JPS6197938A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59219903A JPS6197938A (ja) 1984-10-19 1984-10-19 半導体素子の組立方法
US06/759,273 US4732313A (en) 1984-07-27 1985-07-26 Apparatus and method for manufacturing semiconductor device
EP85109406A EP0169574B1 (en) 1984-07-27 1985-07-26 Apparatus for manufacturing semiconductor device
DE8585109406T DE3577371D1 (de) 1984-07-27 1985-07-26 Apparat zum herstellen einer halbleiteranordnung.
KR1019850005537A KR900000205B1 (ko) 1984-10-19 1985-07-31 결속상태가 개선된 반도체 장치의 제조장치
CN85106110A CN85106110B (zh) 1984-10-19 1985-08-13 制造半导体器件的装置及其使用方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59219903A JPS6197938A (ja) 1984-10-19 1984-10-19 半導体素子の組立方法

Publications (2)

Publication Number Publication Date
JPS6197938A JPS6197938A (ja) 1986-05-16
JPH0367340B2 true JPH0367340B2 (cg-RX-API-DMAC10.html) 1991-10-22

Family

ID=16742835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59219903A Granted JPS6197938A (ja) 1984-07-27 1984-10-19 半導体素子の組立方法

Country Status (1)

Country Link
JP (1) JPS6197938A (cg-RX-API-DMAC10.html)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142485A (en) * 1976-05-21 1977-11-28 Mitsubishi Electric Corp Wire bonding device
JPS5713747A (en) * 1980-06-27 1982-01-23 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS58223339A (ja) * 1982-06-22 1983-12-24 Toshiba Corp 半導体ペレツトのワイヤボンデイング方法

Also Published As

Publication number Publication date
JPS6197938A (ja) 1986-05-16

Similar Documents

Publication Publication Date Title
US4732313A (en) Apparatus and method for manufacturing semiconductor device
KR960005549B1 (ko) 볼 본딩 방법 및 그 장치
KR100378024B1 (ko) 핀형상 와이어의 형성방법
US4674671A (en) Thermosonic palladium lead wire bonding
US20070029367A1 (en) Semiconductor device
US5003373A (en) Structure of electrode junction for semiconductor device
JPS60154537A (ja) 半導体デバイスの製作方法
JPH0367339B2 (cg-RX-API-DMAC10.html)
JPH0367340B2 (cg-RX-API-DMAC10.html)
US5087590A (en) Method of manufacturing semiconductor devices
JPH0354855B2 (cg-RX-API-DMAC10.html)
JPH0462456B2 (cg-RX-API-DMAC10.html)
JPS62152143A (ja) バンプ形成方法
JPH05275428A (ja) バンプの形成方法
CN85106110A (zh) 用于制造半导体器件的装置
JPH05235080A (ja) 半田ワイヤーによるワイヤーボンディング装置
JPH0325019B2 (cg-RX-API-DMAC10.html)
JPS61119053A (ja) ワイヤボンデイング方法
JP2978852B2 (ja) 半導体装置のワイヤボンディング接続方法
JPS60177639A (ja) 半導体装置の製造方法
JPS5944836A (ja) ワイヤ−ボンデイング方法
JPS5944837A (ja) 金線ボンデイング方法
JPS59172732A (ja) ワイヤボンデイング方法
JPH0587976B2 (cg-RX-API-DMAC10.html)
JPS62219935A (ja) ワイヤボンデイング装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term