JPH0366850B2 - - Google Patents
Info
- Publication number
- JPH0366850B2 JPH0366850B2 JP56111935A JP11193581A JPH0366850B2 JP H0366850 B2 JPH0366850 B2 JP H0366850B2 JP 56111935 A JP56111935 A JP 56111935A JP 11193581 A JP11193581 A JP 11193581A JP H0366850 B2 JPH0366850 B2 JP H0366850B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transistor
- field effect
- electrode
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
Landscapes
- Electronic Switches (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56111935A JPS5813030A (ja) | 1981-07-17 | 1981-07-17 | アナログスイッチ装置 |
DE3226339A DE3226339C2 (de) | 1981-07-17 | 1982-07-14 | Analoge Schaltervorrichtung mit MOS-Transistoren |
US06/398,356 US4529897A (en) | 1981-07-17 | 1982-07-15 | Analog switch device having threshold change reducing means |
FR8212498A FR2509931B1 (en, 2012) | 1981-07-17 | 1982-07-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56111935A JPS5813030A (ja) | 1981-07-17 | 1981-07-17 | アナログスイッチ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5813030A JPS5813030A (ja) | 1983-01-25 |
JPH0366850B2 true JPH0366850B2 (en, 2012) | 1991-10-18 |
Family
ID=14573816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56111935A Granted JPS5813030A (ja) | 1981-07-17 | 1981-07-17 | アナログスイッチ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5813030A (en, 2012) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6246470A (ja) * | 1985-08-23 | 1987-02-28 | Toshiba Corp | 磁気デイスク装置 |
GB2327544B (en) * | 1997-07-16 | 2001-02-07 | Ericsson Telefon Ab L M | Electronic analogue switch |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5323260A (en) * | 1976-08-17 | 1978-03-03 | Torio Kk | Mosfet transistor switch circuit |
JPS53129262U (en, 2012) * | 1977-05-02 | 1978-10-13 |
-
1981
- 1981-07-17 JP JP56111935A patent/JPS5813030A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5813030A (ja) | 1983-01-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4529897A (en) | Analog switch device having threshold change reducing means | |
US4417263A (en) | Semiconductor device | |
US6628161B2 (en) | Reference voltage circuit | |
US4453090A (en) | MOS Field-effect capacitor | |
US10054974B1 (en) | Current mirror devices using cascode with back-gate bias | |
US4599554A (en) | Vertical MOSFET with current monitor utilizing common drain current mirror | |
JP2674669B2 (ja) | 半導体集積回路 | |
US5677550A (en) | Integrated circuit devices including insulated-gate transistor device having two separately biasable gates | |
JPH06169247A (ja) | アナログスイッチ | |
US4097844A (en) | Output circuit for a digital correlator | |
JP2560018B2 (ja) | Cmos回路 | |
US5272369A (en) | Circuit element with elimination of kink effect | |
JPH0119303B2 (en, 2012) | ||
EP0449351A1 (en) | Circuit element with elimination of kink effect | |
JPH0366850B2 (en, 2012) | ||
JPH0226816B2 (en, 2012) | ||
JPH0368572B2 (en, 2012) | ||
JPH0794988A (ja) | Mos型半導体クランプ回路 | |
JP2679450B2 (ja) | 半導体装置 | |
US4947056A (en) | MOSFET for producing a constant voltage | |
GB1476192A (en) | Semiconductor switching circuit arrangements | |
JPH0119304B2 (en, 2012) | ||
JPH0666670B2 (ja) | 相補型mosアナログスイッチ | |
CN117130423B (zh) | 参考电压电路 | |
JP2798022B2 (ja) | 基準電圧回路 |