JPH0119304B2 - - Google Patents

Info

Publication number
JPH0119304B2
JPH0119304B2 JP56111932A JP11193281A JPH0119304B2 JP H0119304 B2 JPH0119304 B2 JP H0119304B2 JP 56111932 A JP56111932 A JP 56111932A JP 11193281 A JP11193281 A JP 11193281A JP H0119304 B2 JPH0119304 B2 JP H0119304B2
Authority
JP
Japan
Prior art keywords
voltage
mos transistor
electrode
mos
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56111932A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5813028A (ja
Inventor
Kenji Matsuo
Yasoji Suzuki
Akira Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56111932A priority Critical patent/JPS5813028A/ja
Priority to DE3226339A priority patent/DE3226339C2/de
Priority to US06/398,356 priority patent/US4529897A/en
Priority to FR8212498A priority patent/FR2509931B1/fr
Publication of JPS5813028A publication Critical patent/JPS5813028A/ja
Publication of JPH0119304B2 publication Critical patent/JPH0119304B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018Special modifications or use of the back gate voltage of a FET

Landscapes

  • Electronic Switches (AREA)
JP56111932A 1981-07-17 1981-07-17 アナログスイッチ装置 Granted JPS5813028A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56111932A JPS5813028A (ja) 1981-07-17 1981-07-17 アナログスイッチ装置
DE3226339A DE3226339C2 (de) 1981-07-17 1982-07-14 Analoge Schaltervorrichtung mit MOS-Transistoren
US06/398,356 US4529897A (en) 1981-07-17 1982-07-15 Analog switch device having threshold change reducing means
FR8212498A FR2509931B1 (en, 2012) 1981-07-17 1982-07-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56111932A JPS5813028A (ja) 1981-07-17 1981-07-17 アナログスイッチ装置

Publications (2)

Publication Number Publication Date
JPS5813028A JPS5813028A (ja) 1983-01-25
JPH0119304B2 true JPH0119304B2 (en, 2012) 1989-04-11

Family

ID=14573740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56111932A Granted JPS5813028A (ja) 1981-07-17 1981-07-17 アナログスイッチ装置

Country Status (1)

Country Link
JP (1) JPS5813028A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090108911A1 (en) 2007-10-30 2009-04-30 Rohm Co., Ltd. Analog switch

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323260A (en) * 1976-08-17 1978-03-03 Torio Kk Mosfet transistor switch circuit

Also Published As

Publication number Publication date
JPS5813028A (ja) 1983-01-25

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