JPH0364476B2 - - Google Patents
Info
- Publication number
- JPH0364476B2 JPH0364476B2 JP61154503A JP15450386A JPH0364476B2 JP H0364476 B2 JPH0364476 B2 JP H0364476B2 JP 61154503 A JP61154503 A JP 61154503A JP 15450386 A JP15450386 A JP 15450386A JP H0364476 B2 JPH0364476 B2 JP H0364476B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- polycrystalline
- single crystal
- growth
- abnormal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007790 solid phase Substances 0.000 claims description 37
- 230000002159 abnormal effect Effects 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 27
- 239000000919 ceramic Substances 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000012790 adhesive layer Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 10
- 230000001737 promoting effect Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 239000011222 crystalline ceramic Substances 0.000 claims 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 229910000859 α-Fe Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 2
- 238000005324 grain boundary diffusion Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 241001149900 Fusconaia subrotunda Species 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009036 growth inhibition Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/026—Solid phase epitaxial growth through a disordered intermediate layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61154503A JPS6311591A (ja) | 1986-07-01 | 1986-07-01 | 単結晶セラミクスの製造方法 |
| US07/361,774 US4900393A (en) | 1986-07-01 | 1989-05-26 | Process for producing single-crystal ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61154503A JPS6311591A (ja) | 1986-07-01 | 1986-07-01 | 単結晶セラミクスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6311591A JPS6311591A (ja) | 1988-01-19 |
| JPH0364476B2 true JPH0364476B2 (US20090192370A1-20090730-C00001.png) | 1991-10-07 |
Family
ID=15585665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61154503A Granted JPS6311591A (ja) | 1986-07-01 | 1986-07-01 | 単結晶セラミクスの製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4900393A (US20090192370A1-20090730-C00001.png) |
| JP (1) | JPS6311591A (US20090192370A1-20090730-C00001.png) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5312304A (en) * | 1992-11-18 | 1994-05-17 | United Artists Entertainment | Convertible sprocket for motion picture film |
| US5427051A (en) * | 1993-05-21 | 1995-06-27 | General Electric Company | Solid state formation of sapphire using a localized energy source |
| US5451553A (en) * | 1993-09-24 | 1995-09-19 | General Electric Company | Solid state thermal conversion of polycrystalline alumina to sapphire |
| US5394420A (en) * | 1994-01-27 | 1995-02-28 | Trw Inc. | Multiform crystal and apparatus for fabrication |
| US5487353A (en) * | 1994-02-14 | 1996-01-30 | General Electric Company | Conversion of doped polycrystalline material to single crystal |
| US6048394A (en) * | 1997-08-14 | 2000-04-11 | Competitive Technologies Of Pa, Inc. | Method for growing single crystals from polycrystalline precursors |
| US7208041B2 (en) * | 2000-02-23 | 2007-04-24 | Ceracomp Co., Ltd. | Method for single crystal growth of perovskite oxides |
| US6475942B1 (en) | 2000-09-05 | 2002-11-05 | General Electric Company | Conversion of polycrystalline alumina to single crystal sapphire using molybdenum doping |
| US20030177975A1 (en) * | 2000-09-18 | 2003-09-25 | Akio Ikesue | Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material |
| US6783588B2 (en) * | 2000-12-15 | 2004-08-31 | Canon Kabushiki Kaisha | BaTiO3-PbTiO3 series single crystal and method of manufacturing the same piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator |
| KR100564092B1 (ko) * | 2002-10-11 | 2006-03-27 | 주식회사 세라콤 | 고상 단결정 성장 방법 |
| US8202364B2 (en) * | 2002-10-11 | 2012-06-19 | Ceracomp Co., Ltd. | Method for solid-state single crystal growth |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59141499A (ja) * | 1983-01-28 | 1984-08-14 | Matsushita Electric Ind Co Ltd | 単結晶フエライトの製造方法 |
| JPS61186297A (ja) * | 1985-02-13 | 1986-08-19 | Tdk Corp | 単結晶フエライトの製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5413168B2 (US20090192370A1-20090730-C00001.png) * | 1974-04-25 | 1979-05-29 | ||
| JPS51112800A (en) * | 1975-03-31 | 1976-10-05 | Hideo Tamura | Synthesis of single crystal of ferrite |
| US4402787A (en) * | 1979-05-31 | 1983-09-06 | Ngk Insulators, Ltd. | Method for producing a single crystal |
| JPS56155100A (en) * | 1980-05-02 | 1981-12-01 | Ngk Insulators Ltd | Production of single crystal of ferrite |
-
1986
- 1986-07-01 JP JP61154503A patent/JPS6311591A/ja active Granted
-
1989
- 1989-05-26 US US07/361,774 patent/US4900393A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59141499A (ja) * | 1983-01-28 | 1984-08-14 | Matsushita Electric Ind Co Ltd | 単結晶フエライトの製造方法 |
| JPS61186297A (ja) * | 1985-02-13 | 1986-08-19 | Tdk Corp | 単結晶フエライトの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4900393A (en) | 1990-02-13 |
| JPS6311591A (ja) | 1988-01-19 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |