JPH0363930U - - Google Patents
Info
- Publication number
- JPH0363930U JPH0363930U JP12499889U JP12499889U JPH0363930U JP H0363930 U JPH0363930 U JP H0363930U JP 12499889 U JP12499889 U JP 12499889U JP 12499889 U JP12499889 U JP 12499889U JP H0363930 U JPH0363930 U JP H0363930U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- semiconductor layer
- utility
- scope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12499889U JPH0363930U (enExample) | 1989-10-25 | 1989-10-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12499889U JPH0363930U (enExample) | 1989-10-25 | 1989-10-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0363930U true JPH0363930U (enExample) | 1991-06-21 |
Family
ID=31672887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12499889U Pending JPH0363930U (enExample) | 1989-10-25 | 1989-10-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0363930U (enExample) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60111472A (ja) * | 1983-11-22 | 1985-06-17 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JPS63219171A (ja) * | 1987-03-06 | 1988-09-12 | Hosiden Electronics Co Ltd | 薄膜トランジスタ |
-
1989
- 1989-10-25 JP JP12499889U patent/JPH0363930U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60111472A (ja) * | 1983-11-22 | 1985-06-17 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| JPS63219171A (ja) * | 1987-03-06 | 1988-09-12 | Hosiden Electronics Co Ltd | 薄膜トランジスタ |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0270323A3 (en) | A thin-film transistor | |
| SE8008738L (sv) | Tunnfilmstransistor | |
| JPS5688363A (en) | Field effect transistor | |
| KR20000019853A (en) | Device for sensing x-ray video and manufacturing method thereof | |
| JPS56162875A (en) | Semiconductor device | |
| TW288200B (en) | Semiconductor device and process thereof | |
| JPH02140863U (enExample) | ||
| JPH0363930U (enExample) | ||
| JPS54136275A (en) | Field effect transistor of isolation gate | |
| JPS5691470A (en) | Semiconductor | |
| JPS577972A (en) | Insulated gate type thin film transistor | |
| JPS56126977A (en) | Junction type field effect transistor | |
| JPS5364481A (en) | Production of schottky type field effect transistor | |
| JPS52100877A (en) | Field effect transistor of junction type | |
| JPS5291382A (en) | Insulating gate type field effect transistor | |
| CA2150679A1 (en) | Improved Structure for CdSe TFT | |
| JPS5713765A (en) | Insulated gate type field effect transistor and manufacture thereof | |
| JPS5286086A (en) | Field effect transistor | |
| JPS54104782A (en) | Mos type semiconductor device | |
| JPS6439065A (en) | Thin film field-effect transistor | |
| JPS55108773A (en) | Insulating gate type field effect transistor | |
| JPS5513944A (en) | C-mos semiconductor device | |
| JPS6099553U (ja) | 半導体装置 | |
| JPS52128078A (en) | Manufacture of field effect transistor | |
| GB2013977A (en) | Depletion-mode field-effect transistor |