CA2150679A1 - Improved Structure for CdSe TFT - Google Patents

Improved Structure for CdSe TFT

Info

Publication number
CA2150679A1
CA2150679A1 CA2150679A CA2150679A CA2150679A1 CA 2150679 A1 CA2150679 A1 CA 2150679A1 CA 2150679 A CA2150679 A CA 2150679A CA 2150679 A CA2150679 A CA 2150679A CA 2150679 A1 CA2150679 A1 CA 2150679A1
Authority
CA
Canada
Prior art keywords
deposited
layer
semiconductor channel
thin film
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2150679A
Other languages
French (fr)
Other versions
CA2150679C (en
Inventor
James F. Farrell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
iFire Technology Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP6512599A priority Critical patent/JPH08511130A/en
Priority to CA002150679A priority patent/CA2150679C/en
Priority to PCT/CA1992/000520 priority patent/WO1994013019A1/en
Priority to EP92923643A priority patent/EP0672302A1/en
Publication of CA2150679A1 publication Critical patent/CA2150679A1/en
Application granted granted Critical
Publication of CA2150679C publication Critical patent/CA2150679C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

A thin film transistor, comprising: a glass substrate; a gate electrode deposited on the substrate; a gate insulator layer deposited on the substrate so as to overly the gate electrode; a thin film semiconductor channel layer deposited on the gate insulator layer and substantially aligned with the gate electrode;
a passivation layer deposited on the gate insulator layer so as to overly the thin film semiconductor channel layer; a pair of via holes etched though the passivation layer to the semiconductor channel layer; and a pair of source and drain electrodes deposited on the passivation layer and extending through the via holes for contacting the semiconductor channel layer.
CA002150679A 1992-12-01 1992-12-01 Improved structure for cdse tft Expired - Fee Related CA2150679C (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6512599A JPH08511130A (en) 1992-12-01 1992-12-01 Improved structure for CdSe thin film transistor
CA002150679A CA2150679C (en) 1992-12-01 1992-12-01 Improved structure for cdse tft
PCT/CA1992/000520 WO1994013019A1 (en) 1992-12-01 1992-12-01 IMPROVED STRUCTURE FOR CdSe TFT
EP92923643A EP0672302A1 (en) 1992-12-01 1992-12-01 IMPROVED STRUCTURE FOR CdSe TFT

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA002150679A CA2150679C (en) 1992-12-01 1992-12-01 Improved structure for cdse tft
PCT/CA1992/000520 WO1994013019A1 (en) 1992-12-01 1992-12-01 IMPROVED STRUCTURE FOR CdSe TFT

Publications (2)

Publication Number Publication Date
CA2150679A1 true CA2150679A1 (en) 1994-06-09
CA2150679C CA2150679C (en) 2000-01-11

Family

ID=25677986

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002150679A Expired - Fee Related CA2150679C (en) 1992-12-01 1992-12-01 Improved structure for cdse tft

Country Status (2)

Country Link
CA (1) CA2150679C (en)
WO (1) WO1994013019A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6043113A (en) * 1995-07-31 2000-03-28 1294339 Ontario, Inc. Method of forming self-aligned thin film transistor
CN104020621B (en) * 2014-05-26 2017-03-01 京东方科技集团股份有限公司 A kind of array base palte and preparation method thereof, display device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure

Also Published As

Publication number Publication date
CA2150679C (en) 2000-01-11
WO1994013019A1 (en) 1994-06-09

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed