JPH0363227B2 - - Google Patents

Info

Publication number
JPH0363227B2
JPH0363227B2 JP57099521A JP9952182A JPH0363227B2 JP H0363227 B2 JPH0363227 B2 JP H0363227B2 JP 57099521 A JP57099521 A JP 57099521A JP 9952182 A JP9952182 A JP 9952182A JP H0363227 B2 JPH0363227 B2 JP H0363227B2
Authority
JP
Japan
Prior art keywords
light
optical
optical semiconductor
resin
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57099521A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58216474A (ja
Inventor
Tooru Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57099521A priority Critical patent/JPS58216474A/ja
Publication of JPS58216474A publication Critical patent/JPS58216474A/ja
Publication of JPH0363227B2 publication Critical patent/JPH0363227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H10W90/00—
    • H10W90/756—

Landscapes

  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP57099521A 1982-06-10 1982-06-10 光半導体装置 Granted JPS58216474A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57099521A JPS58216474A (ja) 1982-06-10 1982-06-10 光半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57099521A JPS58216474A (ja) 1982-06-10 1982-06-10 光半導体装置

Publications (2)

Publication Number Publication Date
JPS58216474A JPS58216474A (ja) 1983-12-16
JPH0363227B2 true JPH0363227B2 (enExample) 1991-09-30

Family

ID=14249539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57099521A Granted JPS58216474A (ja) 1982-06-10 1982-06-10 光半導体装置

Country Status (1)

Country Link
JP (1) JPS58216474A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60156759U (ja) * 1984-03-28 1985-10-18 ミツミ電機株式会社 光−電気変換装置
JPS61114859U (enExample) * 1984-12-28 1986-07-19
JPS63176A (ja) * 1986-06-19 1988-01-05 Honda Motor Co Ltd 複合型光センサ
US6795120B2 (en) * 1996-05-17 2004-09-21 Sony Corporation Solid-state imaging apparatus and camera using the same
DE102009046872B4 (de) 2009-11-19 2018-06-21 Ifm Electronic Gmbh Berührungslos arbeitendes elektronisches Schaltgerät mit einer optischen Schaltzustandsanzeige

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120168U (enExample) * 1973-02-13 1974-10-15
JPS51156770U (enExample) * 1975-06-07 1976-12-14
JPS54109389A (en) * 1978-02-16 1979-08-27 Toshiba Corp Semiconductor device and its molding method

Also Published As

Publication number Publication date
JPS58216474A (ja) 1983-12-16

Similar Documents

Publication Publication Date Title
KR970005706B1 (ko) 고체촬상소자 및 그 제조방법
CN109273474B (zh) 一种感光芯片封装结构及其封装方法
JP2000174350A (ja) 光半導体モジュール
CN108447882A (zh) 一种影像传感芯片的封装结构及其封装方法
TW495934B (en) Solid image pickup device
JPH0363227B2 (enExample)
JPH0621414A (ja) 固体撮像装置とその製造方法
CN108520886A (zh) 一种影像传感芯片的封装结构及其封装方法
JP3166216B2 (ja) オンチップレンズ付固体撮像装置およびその製造方法
JPH0469958A (ja) 半導体装置
JPS58218176A (ja) 光半導体装置
JPS62190776A (ja) 光電変換装置
CN101162711A (zh) 封装盖板、芯片封装结构及其制造方法
TWI787999B (zh) 感測器封裝結構及其製造方法
JPH02229453A (ja) 半導体装置及びその製造方法
JPH04114456A (ja) 光電変換装置
JPH02101776A (ja) 光センサ用パッケージとその製造方法
JPS61280676A (ja) フオトセンサｉｃの製造方法
JPS5998564A (ja) フオトセンサおよびその製造方法
JPS63127556A (ja) 半導体装置の製造方法
JPS5910762Y2 (ja) 光結合半導体装置
KR102693303B1 (ko) 방사선 센서 및 이를 위한 제조 방법
JPH0620159B2 (ja) 光半導体装置の製造方法
JPH0349403Y2 (enExample)
JPH02203561A (ja) 半導体装置の製造方法