JPH0362962A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To reduce the occupying area of an input circuit part by providing a protecting resistor at the front stage of the input transistor of the input circuit part, and providing a contact hole for connecting said protecting resistor and an Al pad at the diagonal part with respect to a lead-out port for connection from the protecting resistor to the input transistor. CONSTITUTION:The following parts are formed at the lower part of a bonding pad; an input protecting resistor element 1 constituted of the same material as that of a gate electrode, a second Al part 3 forming a bonding pad, a contact hole 4 for connecting the protecting resistor element 1 and the bonding pad and input transistor 5. Namely when the input protecting resistor element is formed at the lower part of the bonding pad by using the same material as that of the gate electrode, the area is reduced when the input circuit is formed. When the contact hole for the connection with the Al pad is provided at the diagonal part with respect to a lead-out port for connection from the protecting resistor element to the input transistor, the resistance value of the protecting element can be made high, and the surge breakdown of the input transistor due to external noises is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to an input protection circuit for a semiconductor integrated circuit device.

[Conventional technology]

FIG. 3 shows a configuration diagram of a conventional input circuit. In the diagram,
3 is a bonding pad composed of the second Al, Ge) 71! It is connected to the input transistor 5 via a protective resistance element 6 made of the same material as the fiF or made of diffusion or the like. The protective resistance element 6 prevents the input transistor 5 from being damaged by surges due to external noise.

FIG. 4 shows a cross-sectional structure of the semiconductor integrated circuit of the bonding pad portion of FIG. 3. A first A12 and a second A13 are formed on the B1 substrate 8 with Si acid oxidized fluoride interposed therebetween.

[Problem to be solved by the invention]

In the conventional input circuit for a semiconductor integrated circuit device, the protection element was configured on a flat surface as described above, so there was a problem that the area of the input circuit section became large.This invention solves the above problem. The present invention has been made in order to solve the above problems, and the object thereof is to obtain a semiconductor integrated circuit device that can reduce the area occupied by the input circuit section.

[Means to solve the problem]

In the semiconductor integrated circuit device according to the present invention, the input protection resistance element is formed below the bonding pad using the same material as the gate electrode, and is connected to the Al pad in order to increase the resistance value of the protection resistance element. contact hole,
It is provided diagonally to the outlet connecting the protective resistance element to the input transistor.

[For production]

In the semiconductor integrated circuit device according to the present invention, in the input circuit section, the input protection resistance element is formed below the bonding pad using the same material as the gate electrode.
When forming the input circuit, the area is small and Al
By providing the contact hole that connects with the pad diagonally to the outlet that connects the protection resistance element to the input transistor, the resistance value of the protection resistance element can be increased, and the resistance of the input transistor due to external noise can be increased. Surge damage can be prevented.

〔Example〕

Hereinafter, one embodiment of the present invention will be explained with reference to the drawings. In FIG. 1, 1 is an input protection resistance element made of the same material as the gate electrode below the bonding pad, and 3 is a bonding pad. 2nd Al, 4 is protective resistance element 1
Contact hole for connecting the pad and the bonding pad, 5
is the input transistor.

〔Effect of the invention〕

As described above, according to the present invention, since the input protection resistor element is made of the same material as the gate electrode and is provided below the bonding pad, the area of the input circuit section can be reduced, and the bonding pad and the protection resistor element Since the contact hole connecting the protective resistive element to the input transistor is provided diagonally to the outlet connecting the protective resistive element to the input transistor, the resistance value of the protective resistive element can be increased.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing an input circuit of a semiconductor integrated circuit device according to an embodiment of the present invention, FIG. 2 is a sectional view of a bonding pad portion of the input circuit of FIG. 1, and FIG. 3 is a diagram of a conventional semiconductor integrated circuit device. FIG. 4 is a block diagram showing the input circuit of the integrated circuit device. It is a front view. In the figure, l is a protective resistance element made of the same material as the gate electrode, and 2 and 3 are first resistor elements forming a bonding pad.
4 is a contact hole connecting a bonding pad and a protective resistor element, 5 is an input transistor, 6 is a protective resistor element, 1 is an Eli oxide film, and 8 is an 81 substrate. In the figures, the same symbols indicate the same parts or priest parts.

Claims (1)

[Claims] A protective resistor is provided in the front stage of the input transistor of the input circuit section, and a contact hole connecting the protective resistor and the Al pad is provided diagonally to an outlet connecting the protective resistor to the input transistor. Semiconductor integrated circuit device.