JPH0362015B2 - - Google Patents

Info

Publication number
JPH0362015B2
JPH0362015B2 JP58217949A JP21794983A JPH0362015B2 JP H0362015 B2 JPH0362015 B2 JP H0362015B2 JP 58217949 A JP58217949 A JP 58217949A JP 21794983 A JP21794983 A JP 21794983A JP H0362015 B2 JPH0362015 B2 JP H0362015B2
Authority
JP
Japan
Prior art keywords
bipolar transistor
lateral bipolar
epitaxial layer
conductivity type
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58217949A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59104166A (ja
Inventor
Aaru Sumisu Piitaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS59104166A publication Critical patent/JPS59104166A/ja
Publication of JPH0362015B2 publication Critical patent/JPH0362015B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP58217949A 1982-11-22 1983-11-21 横方向バイポ−ラトランジスタ内の基板注入の制御 Granted JPS59104166A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/443,846 US4507848A (en) 1982-11-22 1982-11-22 Control of substrate injection in lateral bipolar transistors
US443846 1982-11-22

Publications (2)

Publication Number Publication Date
JPS59104166A JPS59104166A (ja) 1984-06-15
JPH0362015B2 true JPH0362015B2 (OSRAM) 1991-09-24

Family

ID=23762413

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58217949A Granted JPS59104166A (ja) 1982-11-22 1983-11-21 横方向バイポ−ラトランジスタ内の基板注入の制御

Country Status (5)

Country Link
US (1) US4507848A (OSRAM)
EP (1) EP0110773B1 (OSRAM)
JP (1) JPS59104166A (OSRAM)
CA (1) CA1205923A (OSRAM)
DE (1) DE3381034D1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4669177A (en) * 1985-10-28 1987-06-02 Texas Instruments Incorporated Process for making a lateral bipolar transistor in a standard CSAG process
US5102812A (en) * 1989-11-09 1992-04-07 Bell Communications Research Method of making a lateral bipolar heterojunction structure
US11094806B2 (en) * 2017-12-29 2021-08-17 Texas Instruments Incorporated Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3443174A (en) * 1966-05-17 1969-05-06 Sprague Electric Co L-h junction lateral transistor
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
DE2507366C3 (de) * 1975-02-20 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Unterdrückung parasitärer Schaltungselemente
DE2507613C3 (de) * 1975-02-21 1979-07-05 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines invers betriebenen Transistors
US4025364A (en) * 1975-08-11 1977-05-24 Fairchild Camera And Instrument Corporation Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases
US4167425A (en) * 1975-09-19 1979-09-11 Siemens Aktiengesellschaft Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment
US4115797A (en) * 1976-10-04 1978-09-19 Fairchild Camera And Instrument Corporation Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector
US4144098A (en) * 1977-04-28 1979-03-13 Hughes Aircraft Company P+ Buried layer for I2 L isolation by ion implantation
NL7709363A (nl) * 1977-08-25 1979-02-27 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.
US4231057A (en) * 1978-11-13 1980-10-28 Fujitsu Limited Semiconductor device and method for its preparation
US4201800A (en) * 1978-04-28 1980-05-06 International Business Machines Corp. Hardened photoresist master image mask process
JPS5534619U (OSRAM) * 1978-08-25 1980-03-06
JPS56115565A (en) * 1980-02-19 1981-09-10 Fujitsu Ltd Semiconductor device
US4259680A (en) * 1980-04-17 1981-03-31 Bell Telephone Laboratories, Incorporated High speed lateral bipolar transistor
US4398338A (en) * 1980-12-24 1983-08-16 Fairchild Camera & Instrument Corp. Fabrication of high speed, nonvolatile, electrically erasable memory cell and system utilizing selective masking, deposition and etching techniques
US4433471A (en) * 1982-01-18 1984-02-28 Fairchild Camera & Instrument Corporation Method for the formation of high density memory cells using ion implantation techniques

Also Published As

Publication number Publication date
CA1205923A (en) 1986-06-10
EP0110773A2 (en) 1984-06-13
JPS59104166A (ja) 1984-06-15
DE3381034D1 (de) 1990-02-01
US4507848A (en) 1985-04-02
EP0110773B1 (en) 1989-12-27
EP0110773A3 (en) 1985-09-18

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