JPH0361348B2 - - Google Patents

Info

Publication number
JPH0361348B2
JPH0361348B2 JP57124000A JP12400082A JPH0361348B2 JP H0361348 B2 JPH0361348 B2 JP H0361348B2 JP 57124000 A JP57124000 A JP 57124000A JP 12400082 A JP12400082 A JP 12400082A JP H0361348 B2 JPH0361348 B2 JP H0361348B2
Authority
JP
Japan
Prior art keywords
amorphous silicon
substrate
layer
solar cell
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57124000A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5914682A (ja
Inventor
Kyoshi Takahashi
Makoto Konagai
Masanari Watase
Tadahito Kudo
Noryoshi Mase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arkray Inc
Original Assignee
Arkray Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arkray Inc filed Critical Arkray Inc
Priority to JP57124000A priority Critical patent/JPS5914682A/ja
Publication of JPS5914682A publication Critical patent/JPS5914682A/ja
Publication of JPH0361348B2 publication Critical patent/JPH0361348B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP57124000A 1982-07-16 1982-07-16 アモルフアスシリコン太陽電池 Granted JPS5914682A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57124000A JPS5914682A (ja) 1982-07-16 1982-07-16 アモルフアスシリコン太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57124000A JPS5914682A (ja) 1982-07-16 1982-07-16 アモルフアスシリコン太陽電池

Publications (2)

Publication Number Publication Date
JPS5914682A JPS5914682A (ja) 1984-01-25
JPH0361348B2 true JPH0361348B2 (cs) 1991-09-19

Family

ID=14874554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57124000A Granted JPS5914682A (ja) 1982-07-16 1982-07-16 アモルフアスシリコン太陽電池

Country Status (1)

Country Link
JP (1) JPS5914682A (cs)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN162671B (cs) * 1984-03-05 1988-06-25 Energy Conversion Devices Inc
JPS60201668A (ja) * 1984-03-27 1985-10-12 Agency Of Ind Science & Technol 非晶質太陽電池
JPS6381986A (ja) * 1986-09-26 1988-04-12 Anelva Corp 光電変換素子
JPH0323678A (ja) * 1989-06-20 1991-01-31 Mitsubishi Electric Corp 受光発電素子
JP2784841B2 (ja) * 1990-08-09 1998-08-06 キヤノン株式会社 太陽電池用基板
US5284525A (en) * 1990-12-13 1994-02-08 Canon Kabushiki Kaisha Solar cell
JP2908067B2 (ja) * 1991-05-09 1999-06-21 キヤノン株式会社 太陽電池用基板および太陽電池
DE19543037A1 (de) * 1995-11-07 1997-05-15 Launicke Karl Otto Bauelement mit fotovoltaisch wirksamer Schicht
AU6420398A (en) 1997-03-21 1998-10-20 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
JP3869095B2 (ja) * 1997-11-26 2007-01-17 株式会社東芝 給水加熱器
EP1369931A1 (en) * 2002-06-03 2003-12-10 Hitachi, Ltd. Solar cell and its manufacturing method, metal plate for the same
CN102272944B (zh) * 2009-05-06 2013-08-14 薄膜硅公司 光伏电池和提高半导体层堆叠中的光俘获的方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS569764U (cs) * 1979-07-04 1981-01-27

Also Published As

Publication number Publication date
JPS5914682A (ja) 1984-01-25

Similar Documents

Publication Publication Date Title
JP3271990B2 (ja) 光起電力素子及びその製造方法
US20120017989A1 (en) Metal and metal oxide surface texturing
US4644091A (en) Photoelectric transducer
JP5537101B2 (ja) 結晶シリコン系太陽電池
JP2001345460A (ja) 太陽電池装置
KR20030081662A (ko) 이중층 반사방지막이 형성된 태양전지
US4931412A (en) Method of producing a thin film solar cell having a n-i-p structure
JPH0361348B2 (cs)
CN219917180U (zh) 具有绒面结构的硅片和太阳能电池
CN108365022A (zh) 选择性发射极黑硅多晶perc电池结构的制备方法
JP5991945B2 (ja) 太陽電池および太陽電池モジュール
JPH1197724A (ja) 太陽電池およびその製造方法
WO2025039932A1 (zh) 异质结太阳能电池及其制作方法、光伏组件及光伏系统
CN105161553A (zh) 一种新型全背电极晶体硅太阳电池的制备方法
CN113328012A (zh) 降低复合速率的perc电池的制作方法和perc电池
CN113013293A (zh) 一种异质结电池的制备方法
WO2025138473A1 (zh) 光伏组件及其tbc太阳能电池、tbc电池的背面结构与制备
JP2989373B2 (ja) 光電変換装置の製造方法
CN115642196A (zh) 一种n型topcon电池及其制作方法
CN110265499A (zh) 具有绒面结构的硅片及其制备方法和应用
JPH0328073B2 (cs)
JP2003197940A (ja) 太陽電池用基板の粗面化法
CN113380922A (zh) 制备方法及选择性发射极太阳能电池
CN118053941A (zh) 一种硼掺杂se结构的制备方法、硼掺杂se结构及太阳能电池
CN103746006A (zh) 一种晶体硅太阳能电池的钝化层及其钝化工艺