JPH0356013B2 - - Google Patents
Info
- Publication number
- JPH0356013B2 JPH0356013B2 JP56127057A JP12705781A JPH0356013B2 JP H0356013 B2 JPH0356013 B2 JP H0356013B2 JP 56127057 A JP56127057 A JP 56127057A JP 12705781 A JP12705781 A JP 12705781A JP H0356013 B2 JPH0356013 B2 JP H0356013B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric
- thickness
- order
- electromechanical coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 180
- 239000000463 material Substances 0.000 claims description 18
- 229910010272 inorganic material Inorganic materials 0.000 claims description 8
- 239000011147 inorganic material Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 description 34
- 238000010168 coupling process Methods 0.000 description 34
- 238000005859 coupling reaction Methods 0.000 description 34
- 239000000758 substrate Substances 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910004298 SiO 2 Inorganic materials 0.000 description 16
- 238000005530 etching Methods 0.000 description 14
- 230000004044 response Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 Furthermore Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12705781A JPS5829211A (ja) | 1981-08-13 | 1981-08-13 | 薄膜圧電振動子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12705781A JPS5829211A (ja) | 1981-08-13 | 1981-08-13 | 薄膜圧電振動子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5829211A JPS5829211A (ja) | 1983-02-21 |
JPH0356013B2 true JPH0356013B2 (it) | 1991-08-27 |
Family
ID=14950523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12705781A Granted JPS5829211A (ja) | 1981-08-13 | 1981-08-13 | 薄膜圧電振動子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5829211A (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6068711A (ja) * | 1983-09-26 | 1985-04-19 | Toshiba Corp | 圧電薄膜共振子 |
JPS60189307A (ja) * | 1984-03-09 | 1985-09-26 | Toshiba Corp | 圧電薄膜共振器およびその製造方法 |
US6515402B2 (en) * | 2001-01-24 | 2003-02-04 | Koninklijke Philips Electronics N.V. | Array of ultrasound transducers |
JP2004147246A (ja) | 2002-10-28 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 圧電振動子、それを用いたフィルタ及び圧電振動子の調整方法 |
JP4978210B2 (ja) * | 2007-01-25 | 2012-07-18 | セイコーエプソン株式会社 | バルク音響振動子の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4928795A (it) * | 1972-07-14 | 1974-03-14 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5140771Y2 (it) * | 1971-10-08 | 1976-10-05 | ||
JPS5399976U (it) * | 1977-01-17 | 1978-08-12 |
-
1981
- 1981-08-13 JP JP12705781A patent/JPS5829211A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4928795A (it) * | 1972-07-14 | 1974-03-14 |
Also Published As
Publication number | Publication date |
---|---|
JPS5829211A (ja) | 1983-02-21 |
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