JPH0355783B2 - - Google Patents
Info
- Publication number
- JPH0355783B2 JPH0355783B2 JP24006585A JP24006585A JPH0355783B2 JP H0355783 B2 JPH0355783 B2 JP H0355783B2 JP 24006585 A JP24006585 A JP 24006585A JP 24006585 A JP24006585 A JP 24006585A JP H0355783 B2 JPH0355783 B2 JP H0355783B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion part
- diffusion
- oxide film
- resin
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 description 10
- 239000012535 impurity Substances 0.000 description 9
- 238000007789 sealing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24006585A JPS6298246A (ja) | 1985-10-25 | 1985-10-25 | Mos型半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24006585A JPS6298246A (ja) | 1985-10-25 | 1985-10-25 | Mos型半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6298246A JPS6298246A (ja) | 1987-05-07 |
| JPH0355783B2 true JPH0355783B2 (OSRAM) | 1991-08-26 |
Family
ID=17053963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24006585A Granted JPS6298246A (ja) | 1985-10-25 | 1985-10-25 | Mos型半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6298246A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4546796B2 (ja) * | 2004-09-16 | 2010-09-15 | パナソニック株式会社 | 半導体装置 |
-
1985
- 1985-10-25 JP JP24006585A patent/JPS6298246A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6298246A (ja) | 1987-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4397714A (en) | System for measuring the concentration of chemical substances | |
| US4322680A (en) | Chemically sensitive JFET transducer devices utilizing a blocking interface | |
| KR940001427A (ko) | 박막 반도체 장치와 그 제작방법 | |
| US4908682A (en) | Power MOSFET having a current sensing element of high accuracy | |
| US7211459B2 (en) | Fabrication method of an ion sensitive field effect transistor | |
| GB1457800A (en) | Semiconductor devices | |
| JPH0355783B2 (OSRAM) | ||
| CA1114072A (en) | Charge-flow transistors having metallization patterns | |
| JPS56110264A (en) | High withstand voltage mos transistor | |
| US5160990A (en) | MIS-FET with small chip area and high strength against static electricity | |
| US3453506A (en) | Field-effect transistor having insulated gates | |
| JP2684712B2 (ja) | 電界効果トランジスタ | |
| JPS60102770A (ja) | 半導体装置 | |
| JPS6272135A (ja) | Mos型半導体素子 | |
| JPH03120830A (ja) | 半導体装置 | |
| JPH0462875A (ja) | 半導体装置 | |
| JP2000187017A (ja) | 半導体イオンセンサ | |
| JPH0521347B2 (OSRAM) | ||
| JPH04364079A (ja) | 半導体装置 | |
| JPH05175238A (ja) | 接合型電界効果トランジスタ | |
| JPS6255303B2 (OSRAM) | ||
| JP3119914B2 (ja) | 半導体装置 | |
| JPS62291121A (ja) | プレ−ナ型半導体装置 | |
| JPS632339A (ja) | 封止樹脂評価方法 | |
| JPS57192071A (en) | Solid-state image pickup element |