JPH0354465B2 - - Google Patents

Info

Publication number
JPH0354465B2
JPH0354465B2 JP57193405A JP19340582A JPH0354465B2 JP H0354465 B2 JPH0354465 B2 JP H0354465B2 JP 57193405 A JP57193405 A JP 57193405A JP 19340582 A JP19340582 A JP 19340582A JP H0354465 B2 JPH0354465 B2 JP H0354465B2
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
layer
substrate
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57193405A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5984475A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57193405A priority Critical patent/JPS5984475A/ja
Publication of JPS5984475A publication Critical patent/JPS5984475A/ja
Publication of JPH0354465B2 publication Critical patent/JPH0354465B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57193405A 1982-11-05 1982-11-05 電界効果型トランジスタ Granted JPS5984475A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57193405A JPS5984475A (ja) 1982-11-05 1982-11-05 電界効果型トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57193405A JPS5984475A (ja) 1982-11-05 1982-11-05 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
JPS5984475A JPS5984475A (ja) 1984-05-16
JPH0354465B2 true JPH0354465B2 (forum.php) 1991-08-20

Family

ID=16307402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57193405A Granted JPS5984475A (ja) 1982-11-05 1982-11-05 電界効果型トランジスタ

Country Status (1)

Country Link
JP (1) JPS5984475A (forum.php)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6127681A (ja) * 1984-07-17 1986-02-07 Res Dev Corp Of Japan 超格子構造のチヤネル部をもつ電界効果トランジスタ
JPS62194677A (ja) * 1986-02-20 1987-08-27 Fujitsu Ltd 半導体装置
JPS62209864A (ja) * 1986-03-11 1987-09-16 Fujitsu Ltd 半導体装置
JPH07193234A (ja) * 1993-12-27 1995-07-28 Nec Corp 半導体装置およびその製造方法
KR102353662B1 (ko) * 2014-09-26 2022-01-21 인텔 코포레이션 금속 옥사이드 금속 전계 효과 트랜지스터들（ｍｏｍｆｅｔｓ）

Also Published As

Publication number Publication date
JPS5984475A (ja) 1984-05-16

Similar Documents

Publication Publication Date Title
JPS6327065A (ja) ヘテロ接合二重チャネル半導体装置、この半導体装置を応用した電界効果トランジスタ、ならびにこの半導体装置を応用した負のコンダクタンスをもつ装置
US4704622A (en) Negative transconductance device
JPH0258773B2 (forum.php)
JPH05110086A (ja) トンネルトランジスタ
JPS6342864B2 (forum.php)
US4600932A (en) Enhanced mobility buried channel transistor structure
JPH084138B2 (ja) 半導体装置
JPH0354465B2 (forum.php)
JPH0312769B2 (forum.php)
JPS61241968A (ja) 半導体記憶装置
KR100199024B1 (ko) 두개의 비대칭 양자점을 갖는 평면 공명관통 트랜지스터
Das et al. Effect of noise and temperature on the performance of ferro-tunnel FET
JPS61156773A (ja) ヘテロ接合半導体デバイス
JPS61144881A (ja) 半導体装置
JP2655594B2 (ja) 集積型半導体装置
JPS6281063A (ja) 超格子電子素子
JPH0311767A (ja) 速度変調型電界効果トランジスタ
JPH0352227B2 (forum.php)
Li et al. n-Channel AlSbGaSb modulation-doped field-effect transistors
JPS62209864A (ja) 半導体装置
EP0366861A1 (en) Semiconductor ballistic transistor
JPH0219623B2 (forum.php)
JPS6244698B2 (forum.php)
JPH0513463A (ja) 速度変調トランジスタ
JPH0666465B2 (ja) 電界効果トランジスタ