JPH0351971Y2 - - Google Patents
Info
- Publication number
- JPH0351971Y2 JPH0351971Y2 JP1988062572U JP6257288U JPH0351971Y2 JP H0351971 Y2 JPH0351971 Y2 JP H0351971Y2 JP 1988062572 U JP1988062572 U JP 1988062572U JP 6257288 U JP6257288 U JP 6257288U JP H0351971 Y2 JPH0351971 Y2 JP H0351971Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- plate electrode
- flat plate
- substrate
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 47
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988062572U JPH0351971Y2 (fr) | 1988-05-12 | 1988-05-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988062572U JPH0351971Y2 (fr) | 1988-05-12 | 1988-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01125530U JPH01125530U (fr) | 1989-08-28 |
| JPH0351971Y2 true JPH0351971Y2 (fr) | 1991-11-08 |
Family
ID=31288175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988062572U Expired JPH0351971Y2 (fr) | 1988-05-12 | 1988-05-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0351971Y2 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4445111B2 (ja) * | 2000-09-12 | 2010-04-07 | 株式会社神戸製鋼所 | プラズマ表面処理装置 |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5265184A (en) * | 1975-11-26 | 1977-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Eqipment for simultaneous sputtering at both surface |
| US4116806A (en) * | 1977-12-08 | 1978-09-26 | Battelle Development Corporation | Two-sided planar magnetron sputtering apparatus |
| JPS556410A (en) * | 1978-06-26 | 1980-01-17 | Hitachi Ltd | Plasma gas phase reactor |
| JPS5527626A (en) * | 1978-08-17 | 1980-02-27 | Murata Manufacturing Co | Electronic part magazine container |
| JPS5559727A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Plasma deposition device |
| JPS5585673A (en) * | 1978-12-20 | 1980-06-27 | Advanced Coating Tech | Cathode for sputtering |
| JPS5645761A (en) * | 1979-09-25 | 1981-04-25 | Mitsubishi Electric Corp | Plasma reaction apparatus |
| JPS5664437A (en) * | 1979-08-22 | 1981-06-01 | Onera (Off Nat Aerospatiale) | Method and device for chemically etching integrated circuit by dry process |
| JPS5681923A (en) * | 1979-12-06 | 1981-07-04 | Sumitomo Electric Ind Ltd | Manufacture of thin film |
| EP0034706A2 (fr) * | 1980-02-08 | 1981-09-02 | VEB Zentrum für Forschung und Technologie Mikroelektronik | Procédé et dispositif pour le décapage par un plasma ou pour le revêtement chimique à partir de la phase vapeur dans un plasma |
| JPS56114387A (en) * | 1980-02-13 | 1981-09-08 | Sanyo Electric Co Ltd | Manufacture of photovoltaic force element |
| JPS5743413A (en) * | 1980-05-19 | 1982-03-11 | Energy Conversion Devices Inc | Semiconductor element and method of producing same |
| JPS5767020A (en) * | 1980-10-15 | 1982-04-23 | Agency Of Ind Science & Technol | Thin silicon film and its manufacture |
| JPS5778546A (en) * | 1980-11-05 | 1982-05-17 | Stanley Electric Co Ltd | Production of photoconductive silicon layer |
| JPS5784137A (en) * | 1980-11-14 | 1982-05-26 | Matsushita Electric Ind Co Ltd | Plasma chemical evaporation |
| JPS5789217A (en) * | 1980-11-26 | 1982-06-03 | Seiko Epson Corp | Manufacturing device of semiconductor |
| JPS58174570A (ja) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | グロー放電法による膜形成装置 |
-
1988
- 1988-05-12 JP JP1988062572U patent/JPH0351971Y2/ja not_active Expired
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5265184A (en) * | 1975-11-26 | 1977-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Eqipment for simultaneous sputtering at both surface |
| US4116806A (en) * | 1977-12-08 | 1978-09-26 | Battelle Development Corporation | Two-sided planar magnetron sputtering apparatus |
| JPS556410A (en) * | 1978-06-26 | 1980-01-17 | Hitachi Ltd | Plasma gas phase reactor |
| JPS5527626A (en) * | 1978-08-17 | 1980-02-27 | Murata Manufacturing Co | Electronic part magazine container |
| JPS5559727A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Plasma deposition device |
| JPS5585673A (en) * | 1978-12-20 | 1980-06-27 | Advanced Coating Tech | Cathode for sputtering |
| JPS5664437A (en) * | 1979-08-22 | 1981-06-01 | Onera (Off Nat Aerospatiale) | Method and device for chemically etching integrated circuit by dry process |
| JPS5645761A (en) * | 1979-09-25 | 1981-04-25 | Mitsubishi Electric Corp | Plasma reaction apparatus |
| JPS5681923A (en) * | 1979-12-06 | 1981-07-04 | Sumitomo Electric Ind Ltd | Manufacture of thin film |
| EP0034706A2 (fr) * | 1980-02-08 | 1981-09-02 | VEB Zentrum für Forschung und Technologie Mikroelektronik | Procédé et dispositif pour le décapage par un plasma ou pour le revêtement chimique à partir de la phase vapeur dans un plasma |
| JPS56114387A (en) * | 1980-02-13 | 1981-09-08 | Sanyo Electric Co Ltd | Manufacture of photovoltaic force element |
| JPS5743413A (en) * | 1980-05-19 | 1982-03-11 | Energy Conversion Devices Inc | Semiconductor element and method of producing same |
| JPS5767020A (en) * | 1980-10-15 | 1982-04-23 | Agency Of Ind Science & Technol | Thin silicon film and its manufacture |
| JPS5778546A (en) * | 1980-11-05 | 1982-05-17 | Stanley Electric Co Ltd | Production of photoconductive silicon layer |
| JPS5784137A (en) * | 1980-11-14 | 1982-05-26 | Matsushita Electric Ind Co Ltd | Plasma chemical evaporation |
| JPS5789217A (en) * | 1980-11-26 | 1982-06-03 | Seiko Epson Corp | Manufacturing device of semiconductor |
| JPS58174570A (ja) * | 1982-03-29 | 1983-10-13 | エナージー・コンバーション・デバイセス・インコーポレーテッド | グロー放電法による膜形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01125530U (fr) | 1989-08-28 |
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