JPH0351845U - - Google Patents
Info
- Publication number
- JPH0351845U JPH0351845U JP11228589U JP11228589U JPH0351845U JP H0351845 U JPH0351845 U JP H0351845U JP 11228589 U JP11228589 U JP 11228589U JP 11228589 U JP11228589 U JP 11228589U JP H0351845 U JPH0351845 U JP H0351845U
- Authority
- JP
- Japan
- Prior art keywords
- glass
- melting point
- bonded
- low melting
- point glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
第１図は本考案のガラス封止型半導体素子収納
用パツケージの一実施例を示す断面図、第２図は
従来のガラス封止型半導体素子収納用パツケージ
の断面図である。 １……絶縁基体、２……蓋体、４，４′……封
止用低融点ガラス、５……外部リード端子、７…
…補強膜。
用パツケージの一実施例を示す断面図、第２図は
従来のガラス封止型半導体素子収納用パツケージ
の断面図である。 １……絶縁基体、２……蓋体、４，４′……封
止用低融点ガラス、５……外部リード端子、７…
…補強膜。
Claims (1)
- 絶縁基体と透光性セラミツクから成る蓋体とを
、その間に多数の外部リード端子を挟むと共に、
低融点ガラスにより接合して成るガラス封止型半
導体素子収納用パツケージにおいて、前記蓋体の
低融点ガラスが接合する表面に表面粗さ（中心線
平均粗さＲａ）がＲａ≧０．１５μｍの薄膜形成
技術により形成される補強膜を被着させたことを
特徴とするガラス封止型半導体素子収納用パツケ
ージ。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11228589U JPH0351845U (ja) | 1989-09-26 | 1989-09-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11228589U JPH0351845U (ja) | 1989-09-26 | 1989-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0351845U true JPH0351845U (ja) | 1991-05-20 |
Family
ID=31660734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11228589U Pending JPH0351845U (ja) | 1989-09-26 | 1989-09-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0351845U (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011142957A (ja) * | 2010-01-12 | 2011-07-28 | Monberu:Kk | 絞り機構 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5491057A (en) * | 1977-12-28 | 1979-07-19 | Nec Corp | Semiconductor device |
| JPS61108151A (ja) * | 1984-11-01 | 1986-05-26 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
| JPH02244660A (ja) * | 1989-03-15 | 1990-09-28 | Nec Corp | 紫外線消去型メモリｉｃ |
-
1989
- 1989-09-26 JP JP11228589U patent/JPH0351845U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5491057A (en) * | 1977-12-28 | 1979-07-19 | Nec Corp | Semiconductor device |
| JPS61108151A (ja) * | 1984-11-01 | 1986-05-26 | Sumitomo Electric Ind Ltd | 半導体装置用基板 |
| JPH02244660A (ja) * | 1989-03-15 | 1990-09-28 | Nec Corp | 紫外線消去型メモリｉｃ |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011142957A (ja) * | 2010-01-12 | 2011-07-28 | Monberu:Kk | 絞り機構 |
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