JPH0351787B2 - - Google Patents
Info
- Publication number
- JPH0351787B2 JPH0351787B2 JP58171217A JP17121783A JPH0351787B2 JP H0351787 B2 JPH0351787 B2 JP H0351787B2 JP 58171217 A JP58171217 A JP 58171217A JP 17121783 A JP17121783 A JP 17121783A JP H0351787 B2 JPH0351787 B2 JP H0351787B2
- Authority
- JP
- Japan
- Prior art keywords
- boron
- substrate
- ions
- ion
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 28
- 230000008020 evaporation Effects 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 25
- 229910052582 BN Inorganic materials 0.000 claims description 24
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 24
- 125000004429 atom Chemical group 0.000 claims description 15
- 230000001133 acceleration Effects 0.000 claims description 14
- 229910052796 boron Inorganic materials 0.000 claims description 13
- -1 nitrogen atom ions Chemical class 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 150000001639 boron compounds Chemical class 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 2
- 239000006104 solid solution Substances 0.000 claims description 2
- 239000011195 cermet Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical compound [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- ZVTQDOIPKNCMAR-UHFFFAOYSA-N sulfanylidene(sulfanylideneboranylsulfanyl)borane Chemical compound S=BSB=S ZVTQDOIPKNCMAR-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58171217A JPS6063372A (ja) | 1983-09-19 | 1983-09-19 | 高硬度窒化ホウ素薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58171217A JPS6063372A (ja) | 1983-09-19 | 1983-09-19 | 高硬度窒化ホウ素薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6063372A JPS6063372A (ja) | 1985-04-11 |
| JPH0351787B2 true JPH0351787B2 (de) | 1991-08-07 |
Family
ID=15919206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58171217A Granted JPS6063372A (ja) | 1983-09-19 | 1983-09-19 | 高硬度窒化ホウ素薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6063372A (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60152677A (ja) * | 1984-01-20 | 1985-08-10 | Sumitomo Electric Ind Ltd | 立方晶窒化硼素被覆硬質体の製造方法 |
| JPS61157674A (ja) * | 1984-12-29 | 1986-07-17 | Agency Of Ind Science & Technol | 高硬度窒化ホウ素膜の製造方法 |
| JP2603919B2 (ja) * | 1985-10-18 | 1997-04-23 | 日新電機株式会社 | 立方晶系窒化ホウ素の結晶粒を含む窒化ホウ素膜の作製方法 |
| JP2593441B2 (ja) * | 1986-01-16 | 1997-03-26 | 日新電機株式会社 | 高硬度膜被覆工具材料とその製造方法 |
| JPH0742571B2 (ja) * | 1986-07-11 | 1995-05-10 | 三菱重工業株式会社 | Ｃｂｎ被覆法 |
| JPH0819523B2 (ja) * | 1986-11-22 | 1996-02-28 | 住友電気工業株式会社 | 高硬度窒化硼素の合成法 |
| JPH01225767A (ja) * | 1988-03-07 | 1989-09-08 | Nissin Electric Co Ltd | 窒化ケイ素膜の製造方法 |
| JPH0685962B2 (ja) * | 1988-12-07 | 1994-11-02 | 工業技術院長 | 鍛造用金型及びその製法 |
| JPH02159362A (ja) * | 1988-12-13 | 1990-06-19 | Mitsubishi Heavy Ind Ltd | 薄膜製造方法および装置 |
| JP2761026B2 (ja) * | 1989-03-31 | 1998-06-04 | 三菱重工業株式会社 | 窒化ホウ素膜の製造方法 |
| DE69021337T2 (de) * | 1989-11-17 | 1996-01-25 | Nissin Electric Co Ltd | Verfahren zum Bilden einer Bornitrid enthaltenden Borschicht, Magnetkopf und Verfahren zu dessen Herstellung. |
| JP2611522B2 (ja) * | 1990-09-12 | 1997-05-21 | 日新電機株式会社 | 窒化ホウ素薄膜の形成方法 |
| JP2611521B2 (ja) * | 1990-09-12 | 1997-05-21 | 日新電機株式会社 | 窒化ホウ素薄膜の形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5282699A (en) * | 1975-12-29 | 1977-07-11 | Youichi Murayama | Hard boronnitride c0ating |
-
1983
- 1983-09-19 JP JP58171217A patent/JPS6063372A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5282699A (en) * | 1975-12-29 | 1977-07-11 | Youichi Murayama | Hard boronnitride c0ating |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6063372A (ja) | 1985-04-11 |
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