JPH0351679B2 - - Google Patents
Info
- Publication number
- JPH0351679B2 JPH0351679B2 JP61305123A JP30512386A JPH0351679B2 JP H0351679 B2 JPH0351679 B2 JP H0351679B2 JP 61305123 A JP61305123 A JP 61305123A JP 30512386 A JP30512386 A JP 30512386A JP H0351679 B2 JPH0351679 B2 JP H0351679B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- carbide whiskers
- carbon
- raw material
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Catalysts (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61305123A JPS63159299A (ja) | 1986-12-20 | 1986-12-20 | 炭化ケイ素ウイスカ−の製造方法 |
US07/096,743 US4873070A (en) | 1986-12-17 | 1987-09-15 | Process for producing silicon carbide whiskers |
DE8787308276T DE3777577D1 (de) | 1986-12-17 | 1987-09-18 | Verfahren zur herstellung von siliziumcarbid-whiskern. |
EP87308276A EP0272773B1 (en) | 1986-12-17 | 1987-09-18 | Process for production silicon carbide whiskers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61305123A JPS63159299A (ja) | 1986-12-20 | 1986-12-20 | 炭化ケイ素ウイスカ−の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63159299A JPS63159299A (ja) | 1988-07-02 |
JPH0351679B2 true JPH0351679B2 (en:Method) | 1991-08-07 |
Family
ID=17941375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61305123A Granted JPS63159299A (ja) | 1986-12-17 | 1986-12-20 | 炭化ケイ素ウイスカ−の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63159299A (en:Method) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57101000A (en) * | 1980-12-12 | 1982-06-23 | Sumitomo Electric Ind Ltd | Preparation of ceramic whisker |
JPS58120599A (ja) * | 1982-01-12 | 1983-07-18 | Onoda Cement Co Ltd | β−炭化珪素ウイスカ−の製造方法 |
-
1986
- 1986-12-20 JP JP61305123A patent/JPS63159299A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS63159299A (ja) | 1988-07-02 |
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