JPH0350832B2 - - Google Patents
Info
- Publication number
- JPH0350832B2 JPH0350832B2 JP2442582A JP2442582A JPH0350832B2 JP H0350832 B2 JPH0350832 B2 JP H0350832B2 JP 2442582 A JP2442582 A JP 2442582A JP 2442582 A JP2442582 A JP 2442582A JP H0350832 B2 JPH0350832 B2 JP H0350832B2
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- target
- magnet
- speed
- center
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004544 sputter deposition Methods 0.000 claims description 44
- 230000033001 locomotion Effects 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 24
- 239000000758 substrate Substances 0.000 description 22
- 238000001514 detection method Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2442582A JPS58144474A (ja) | 1982-02-19 | 1982-02-19 | スパツタリング装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2442582A JPS58144474A (ja) | 1982-02-19 | 1982-02-19 | スパツタリング装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58144474A JPS58144474A (ja) | 1983-08-27 |
JPH0350832B2 true JPH0350832B2 (zh) | 1991-08-02 |
Family
ID=12137792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2442582A Granted JPS58144474A (ja) | 1982-02-19 | 1982-02-19 | スパツタリング装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58144474A (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0718006B2 (ja) * | 1983-11-30 | 1995-03-01 | 日本テキサス・インスツルメンツ株式会社 | スパッタ装置 |
JPH0774438B2 (ja) * | 1985-12-17 | 1995-08-09 | ローム株式会社 | マグネトロンスパッタにおける膜厚調整方法 |
JPH0752527B2 (ja) * | 1986-08-18 | 1995-06-05 | 松下電器産業株式会社 | 光学情報記録再生デイスクの製造方法 |
JPH01123065A (ja) * | 1987-11-05 | 1989-05-16 | Fuji Electric Co Ltd | 薄膜形成装置 |
JPH04308083A (ja) * | 1991-04-06 | 1992-10-30 | Japan Steel Works Ltd:The | 薄膜の作成方法 |
JP4939709B2 (ja) * | 2001-09-06 | 2012-05-30 | アプライド マテリアルズ インコーポレイテッド | スパッタリング装置のマグネトロンユニット及びスパッタリング装置 |
US8585873B2 (en) * | 2004-10-16 | 2013-11-19 | Aviza Technology Limited | Methods and apparatus for sputtering |
JP5613243B2 (ja) * | 2010-11-18 | 2014-10-22 | 株式会社アルバック | 成膜装置及び成膜方法 |
JP6425431B2 (ja) * | 2014-06-30 | 2018-11-21 | 株式会社アルバック | スパッタリング方法 |
-
1982
- 1982-02-19 JP JP2442582A patent/JPS58144474A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58144474A (ja) | 1983-08-27 |
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