JPH0350522Y2 - - Google Patents

Info

Publication number

JPH0350522Y2

JPH0350522Y2 JP1979115353U JP11535379U JPH0350522Y2 JP H0350522 Y2 JPH0350522 Y2 JP H0350522Y2 JP 1979115353 U JP1979115353 U JP 1979115353U JP 11535379 U JP11535379 U JP 11535379U JP H0350522 Y2 JPH0350522 Y2 JP H0350522Y2

Authority

JP

Japan

Prior art keywords

photomask

glass

glass substrate

pattern

layer

Prior art date

1979-08-22

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000011521 glass Substances 0.000 claims description 39
• 239000000758 substrate Substances 0.000 claims description 26
• 238000000034 method Methods 0.000 description 10
• 238000005498 polishing Methods 0.000 description 6
• VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
• WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 4
• 229910052804 chromium Inorganic materials 0.000 description 4
• 239000011651 chromium Substances 0.000 description 4
• 229910000423 chromium oxide Inorganic materials 0.000 description 4
• 238000005530 etching Methods 0.000 description 4
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
• 238000004519 manufacturing process Methods 0.000 description 3
• CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
• 239000003082 abrasive agent Substances 0.000 description 2
• 230000007547 defect Effects 0.000 description 2
• 239000004065 semiconductor Substances 0.000 description 2
• 238000004528 spin coating Methods 0.000 description 2
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 229910000420 cerium oxide Inorganic materials 0.000 description 1
• 238000002508 contact lithography Methods 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 230000002950 deficient Effects 0.000 description 1
• 230000018044 dehydration Effects 0.000 description 1
• 238000006297 dehydration reaction Methods 0.000 description 1
• 238000010586 diagram Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 1
• 238000010438 heat treatment Methods 0.000 description 1
• 239000007788 liquid Substances 0.000 description 1
• 208000019423 liver disease Diseases 0.000 description 1
• 239000003960 organic solvent Substances 0.000 description 1
• 230000003647 oxidation Effects 0.000 description 1
• 238000007254 oxidation reaction Methods 0.000 description 1
• BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
• 238000000059 patterning Methods 0.000 description 1
• 229920002120 photoresistant polymer Polymers 0.000 description 1
• 238000007517 polishing process Methods 0.000 description 1
• 235000019353 potassium silicate Nutrition 0.000 description 1
• 239000010453 quartz Substances 0.000 description 1
• 238000000926 separation method Methods 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
• XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
• 229910052724 xenon Inorganic materials 0.000 description 1
• FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1