JPH03502389A - 静電損傷を減少させる手段を備えた集積回路 - Google Patents
静電損傷を減少させる手段を備えた集積回路Info
- Publication number
- JPH03502389A JPH03502389A JP50226889A JP50226889A JPH03502389A JP H03502389 A JPH03502389 A JP H03502389A JP 50226889 A JP50226889 A JP 50226889A JP 50226889 A JP50226889 A JP 50226889A JP H03502389 A JPH03502389 A JP H03502389A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- dielectric
- substrate
- integrated circuit
- low temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000006378 damage Effects 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 28
- 230000015556 catabolic process Effects 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000003989 dielectric material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000029142 excretion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15155588A | 1988-02-02 | 1988-02-02 | |
| US151,555 | 1988-02-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03502389A true JPH03502389A (ja) | 1991-05-30 |
Family
ID=22539291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50226889A Pending JPH03502389A (ja) | 1988-02-02 | 1989-01-23 | 静電損傷を減少させる手段を備えた集積回路 |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0397780A4 (fr) |
| JP (1) | JPH03502389A (fr) |
| CA (1) | CA1303753C (fr) |
| WO (1) | WO1989007334A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5633663B1 (ja) * | 2013-01-23 | 2014-12-03 | 株式会社村田製作所 | 薄膜キャパシタとツエナーダイオードの複合電子部品およびその製造方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2268328B (en) * | 1992-06-30 | 1995-09-06 | Texas Instruments Ltd | A capacitor with electrostatic discharge protection |
| GB9907910D0 (en) * | 1999-04-07 | 1999-06-02 | Koninkl Philips Electronics Nv | Thin film capacitor element |
| CN100583437C (zh) | 2005-03-02 | 2010-01-20 | Nxp股份有限公司 | 电子器件及其使用 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5587444A (en) * | 1978-12-26 | 1980-07-02 | Fujitsu Ltd | Method of forming insulating film on semiconductor surface |
| NL8100347A (nl) * | 1981-01-26 | 1982-08-16 | Philips Nv | Halfgeleiderinrichting met een beveiligingsinrichting. |
| BR8606541A (pt) * | 1985-04-08 | 1987-08-04 | Sgs Semiconductor Corp | Rede de protecao de entrada aperfeicoada para reduzir o efeito de danificacao de uma descarga eletrostatica em pelo menos um eletrodo de portao de entrada de um chip semicondutor mos |
| US4763184A (en) * | 1985-04-30 | 1988-08-09 | Waferscale Integration, Inc. | Input circuit for protecting against damage caused by electrostatic discharge |
| US4806999A (en) * | 1985-09-30 | 1989-02-21 | American Telephone And Telegraph Company, At&T Bell Laboratories | Area efficient input protection |
| US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
-
1989
- 1989-01-23 WO PCT/US1989/000257 patent/WO1989007334A1/fr not_active Application Discontinuation
- 1989-01-23 JP JP50226889A patent/JPH03502389A/ja active Pending
- 1989-01-23 EP EP19890902440 patent/EP0397780A4/en not_active Withdrawn
- 1989-01-30 CA CA000589539A patent/CA1303753C/fr not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5633663B1 (ja) * | 2013-01-23 | 2014-12-03 | 株式会社村田製作所 | 薄膜キャパシタとツエナーダイオードの複合電子部品およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1303753C (fr) | 1992-06-16 |
| EP0397780A1 (fr) | 1990-11-22 |
| WO1989007334A1 (fr) | 1989-08-10 |
| EP0397780A4 (en) | 1991-09-18 |
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