JPH0345953Y2 - - Google Patents
Info
- Publication number
- JPH0345953Y2 JPH0345953Y2 JP1987037808U JP3780887U JPH0345953Y2 JP H0345953 Y2 JPH0345953 Y2 JP H0345953Y2 JP 1987037808 U JP1987037808 U JP 1987037808U JP 3780887 U JP3780887 U JP 3780887U JP H0345953 Y2 JPH0345953 Y2 JP H0345953Y2
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- crucible
- beam source
- opening
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987037808U JPH0345953Y2 (enExample) | 1987-03-13 | 1987-03-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987037808U JPH0345953Y2 (enExample) | 1987-03-13 | 1987-03-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63145866U JPS63145866U (enExample) | 1988-09-27 |
| JPH0345953Y2 true JPH0345953Y2 (enExample) | 1991-09-27 |
Family
ID=30849467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987037808U Expired JPH0345953Y2 (enExample) | 1987-03-13 | 1987-03-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0345953Y2 (enExample) |
-
1987
- 1987-03-13 JP JP1987037808U patent/JPH0345953Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63145866U (enExample) | 1988-09-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7815737B2 (en) | Source for thermal physical vapor deposition of organic electroluminescent layers | |
| JP4713612B2 (ja) | 単一坩堝とかかる坩堝を利用した流出(エフュージョン)源 | |
| US5558720A (en) | Rapid response vapor source | |
| US2772318A (en) | Apparatus for vaporization of metals and metalloids | |
| US4699083A (en) | Molecular beam generator using thermal decomposition for manufacturing semiconductors by epitaxy | |
| EP0735157A2 (en) | Formation of magnesium vapor with high evaporation speed | |
| KR101846692B1 (ko) | 스피팅 방지 구조체를 구비한 증착장치용 증발원 | |
| JP2004211110A (ja) | 蒸着用るつぼ、蒸着装置および蒸着方法 | |
| JPH10214787A (ja) | Si用分子線セルと分子線エピタキシー装置 | |
| KR100829736B1 (ko) | 진공 증착장치의 가열용기 | |
| JPH09209126A (ja) | 真空蒸着装置 | |
| JPH0585888A (ja) | 分子線発生装置 | |
| KR20170056326A (ko) | 진공증착기용 매니퓰레이터 | |
| JP7011521B2 (ja) | 真空蒸着装置用の蒸着源 | |
| JPH097948A (ja) | 分子線の生成方法および分子線セル | |
| JPH0473285B2 (enExample) | ||
| JPH0544023A (ja) | 物質の蒸発方法及びその装置 | |
| JPH08199345A (ja) | 成膜装置及び成膜方法 | |
| JPH0748669Y2 (ja) | 分子線セル | |
| JPH072617Y2 (ja) | Pbnルツボの均一加熱機構 | |
| JP2652947B2 (ja) | 分子線セル | |
| JPH0232781B2 (enExample) | ||
| JPH0680496A (ja) | 低温用クヌ−ドセンセル | |
| JPS6369967A (ja) | 蒸着膜形成装置 | |
| JPS62190719A (ja) | 分子線エピタキシヤル成長装置 |