JPH0345677U - - Google Patents
Info
- Publication number
- JPH0345677U JPH0345677U JP9320090U JP9320090U JPH0345677U JP H0345677 U JPH0345677 U JP H0345677U JP 9320090 U JP9320090 U JP 9320090U JP 9320090 U JP9320090 U JP 9320090U JP H0345677 U JPH0345677 U JP H0345677U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- buffer layer
- type
- type inp
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005253 cladding Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- 240000002329 Inga feuillei Species 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9320090U JPH0345677U (US06534493-20030318-C00166.png) | 1990-09-05 | 1990-09-05 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9320090U JPH0345677U (US06534493-20030318-C00166.png) | 1990-09-05 | 1990-09-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0345677U true JPH0345677U (US06534493-20030318-C00166.png) | 1991-04-26 |
Family
ID=31642596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9320090U Pending JPH0345677U (US06534493-20030318-C00166.png) | 1990-09-05 | 1990-09-05 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0345677U (US06534493-20030318-C00166.png) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5496386A (en) * | 1978-01-14 | 1979-07-30 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of buried optical semiconductor device |
JPS55140286A (en) * | 1979-04-18 | 1980-11-01 | Toshiba Corp | Buried heterogeneous structure semiconductor for use in laser |
JPS59145590A (ja) * | 1983-02-09 | 1984-08-21 | Hitachi Ltd | 半導体レ−ザ装置 |
-
1990
- 1990-09-05 JP JP9320090U patent/JPH0345677U/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5496386A (en) * | 1978-01-14 | 1979-07-30 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of buried optical semiconductor device |
JPS55140286A (en) * | 1979-04-18 | 1980-11-01 | Toshiba Corp | Buried heterogeneous structure semiconductor for use in laser |
JPS59145590A (ja) * | 1983-02-09 | 1984-08-21 | Hitachi Ltd | 半導体レ−ザ装置 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0345677U (US06534493-20030318-C00166.png) | ||
JPS61230388A (ja) | 埋込型半導体レ−ザ | |
JPH0710015B2 (ja) | 半導体レ−ザ装置及びその作製方法 | |
JP2685499B2 (ja) | 半導体レーザ素子 | |
JPH0247067U (US06534493-20030318-C00166.png) | ||
JPS63195769U (US06534493-20030318-C00166.png) | ||
JPS60123083A (ja) | 半導体装置 | |
JP2822195B2 (ja) | 半導体レーザーの製造方法 | |
JPH0234828Y2 (US06534493-20030318-C00166.png) | ||
JP2717213B2 (ja) | 面発光型半導体レーザ装置 | |
JPS6312870U (US06534493-20030318-C00166.png) | ||
JPH0392065U (US06534493-20030318-C00166.png) | ||
JPS6054360U (ja) | 半導体レ−ザ− | |
KR950012931A (ko) | 레이저 다이오드 및 그의 제조방법 | |
JPS62197871U (US06534493-20030318-C00166.png) | ||
JP2940185B2 (ja) | 埋め込み型半導体レーザ | |
JPS59107163U (ja) | 半導体レ−ザ・ダイオ−ド | |
JP2528834B2 (ja) | 半導体レ−ザ装置 | |
JPS6355566U (US06534493-20030318-C00166.png) | ||
JPS58116259U (ja) | 半導体レ−ザ | |
JPS63169087A (ja) | 半導体レ−ザ | |
JPS63250885A (ja) | 半導体レ−ザ素子の製造方法 | |
JPH04257284A (ja) | 埋め込みヘテロ構造半導体レーザ | |
JPH0213470B2 (US06534493-20030318-C00166.png) | ||
JPH01108958U (US06534493-20030318-C00166.png) |