JPH0340470A - 絶縁ゲイト型電界効果トランジスタ - Google Patents

絶縁ゲイト型電界効果トランジスタ

Info

Publication number
JPH0340470A
JPH0340470A JP1274696A JP27469689A JPH0340470A JP H0340470 A JPH0340470 A JP H0340470A JP 1274696 A JP1274696 A JP 1274696A JP 27469689 A JP27469689 A JP 27469689A JP H0340470 A JPH0340470 A JP H0340470A
Authority
JP
Japan
Prior art keywords
semiconductor
type
silicon
silicon carbide
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1274696A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0525395B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP1274696A priority Critical patent/JPH0340470A/ja
Publication of JPH0340470A publication Critical patent/JPH0340470A/ja
Publication of JPH0525395B2 publication Critical patent/JPH0525395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
JP1274696A 1989-10-20 1989-10-20 絶縁ゲイト型電界効果トランジスタ Granted JPH0340470A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1274696A JPH0340470A (ja) 1989-10-20 1989-10-20 絶縁ゲイト型電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1274696A JPH0340470A (ja) 1989-10-20 1989-10-20 絶縁ゲイト型電界効果トランジスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP58151405A Division JPS6043869A (ja) 1983-08-19 1983-08-19 半導体装置

Publications (2)

Publication Number Publication Date
JPH0340470A true JPH0340470A (ja) 1991-02-21
JPH0525395B2 JPH0525395B2 (enrdf_load_stackoverflow) 1993-04-12

Family

ID=17545296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1274696A Granted JPH0340470A (ja) 1989-10-20 1989-10-20 絶縁ゲイト型電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPH0340470A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors

Also Published As

Publication number Publication date
JPH0525395B2 (enrdf_load_stackoverflow) 1993-04-12

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