JPH033946B2 - - Google Patents

Info

Publication number
JPH033946B2
JPH033946B2 JP58056832A JP5683283A JPH033946B2 JP H033946 B2 JPH033946 B2 JP H033946B2 JP 58056832 A JP58056832 A JP 58056832A JP 5683283 A JP5683283 A JP 5683283A JP H033946 B2 JPH033946 B2 JP H033946B2
Authority
JP
Japan
Prior art keywords
sample
dislocation density
acoustic signal
crystal
acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58056832A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59184539A (ja
Inventor
Masahiko Morita
Shiro Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Broadcasting Corp
Original Assignee
Japan Broadcasting Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Broadcasting Corp filed Critical Japan Broadcasting Corp
Priority to JP58056832A priority Critical patent/JPS59184539A/ja
Publication of JPS59184539A publication Critical patent/JPS59184539A/ja
Publication of JPH033946B2 publication Critical patent/JPH033946B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP58056832A 1983-04-02 1983-04-02 半導体結晶の転位密度測定方法 Granted JPS59184539A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58056832A JPS59184539A (ja) 1983-04-02 1983-04-02 半導体結晶の転位密度測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58056832A JPS59184539A (ja) 1983-04-02 1983-04-02 半導体結晶の転位密度測定方法

Publications (2)

Publication Number Publication Date
JPS59184539A JPS59184539A (ja) 1984-10-19
JPH033946B2 true JPH033946B2 (enExample) 1991-01-21

Family

ID=13038354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58056832A Granted JPS59184539A (ja) 1983-04-02 1983-04-02 半導体結晶の転位密度測定方法

Country Status (1)

Country Link
JP (1) JPS59184539A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6227036B1 (en) 1998-10-28 2001-05-08 The Regents Of The University Of Michigan Multiple microphone photoacoustic leak detection and localization system and method
JP4790578B2 (ja) * 2006-12-11 2011-10-12 日本電信電話株式会社 成分濃度測定装置
JP5358065B2 (ja) * 2007-04-18 2013-12-04 日本電信電話株式会社 成分濃度測定装置
JP6264183B2 (ja) * 2014-05-14 2018-01-24 昭和電工株式会社 光音響分光方法および光音響分光装置
WO2017154450A1 (ja) * 2016-03-10 2017-09-14 国立大学法人北海道大学 金属酸化物の同定方法

Also Published As

Publication number Publication date
JPS59184539A (ja) 1984-10-19

Similar Documents

Publication Publication Date Title
US7045786B2 (en) Method of photocarrier radiometry of semiconductors
JPWO1996028721A1 (ja) 検査方法並びに装置及びこれを用いた半導体装置の製造方法
JPH0535983B2 (enExample)
JPH0816607B2 (ja) 薄膜処理制御方法
JPS63124942A (ja) 特に半導体スライスの表面性状を測定するための方法と装置
JP3830461B2 (ja) 固体中の欠陥測定方法および欠陥測定装置
WO1997035162A1 (en) Method and device for measuring defect of crystal on crystal surface
JPH033946B2 (enExample)
Wright Fluorescence excitation spectra and quantum efficiencies of organic crystals
JPH0318340B2 (enExample)
JP3730289B2 (ja) 半導体ウェーハの欠陥測定方法及び同装置
CN115728250B (zh) 一种半导体载流子动力学测试仪器及测试方法
Maslar et al. Raman spectroscopy of n-type and p-type GaSb with multiple excitation wavelengths
JPH01182739A (ja) 化合物半導体結晶の歪測定方法
JPH0410578B2 (enExample)
JPS58102536A (ja) 半導体結晶評価法
JP3313994B2 (ja) 光熱ベンディング分光装置および分光法
RU2009575C1 (ru) Способ бесконтактного определения характеристик кремниевых пластин с внутренним геттером
RU1784878C (ru) Способ обнаружени дефектов в поверхности диэлектрических и полупроводниковых материалов
JPH01181434A (ja) ビーム変調分光装置
Kuwahata et al. Carrier concentration dependence of photoacoustic signal intensity of silicon
Brueck Optical Microanalysis of Device Materials and Structures
JPH0495853A (ja) 非接触半導体評価装置
Mandelis et al. Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay
JPS62115346A (ja) 半導体結晶中の不純物濃度の測定方法、および装置