JPH0337743B2 - - Google Patents
Info
- Publication number
- JPH0337743B2 JPH0337743B2 JP56168092A JP16809281A JPH0337743B2 JP H0337743 B2 JPH0337743 B2 JP H0337743B2 JP 56168092 A JP56168092 A JP 56168092A JP 16809281 A JP16809281 A JP 16809281A JP H0337743 B2 JPH0337743 B2 JP H0337743B2
- Authority
- JP
- Japan
- Prior art keywords
- signal
- photoelectric conversion
- output
- wiring
- amplification means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 66
- 230000003321 amplification Effects 0.000 claims description 33
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 33
- 238000003860 storage Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims description 3
- 239000010409 thin film Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56168092A JPS5868968A (ja) | 1981-10-21 | 1981-10-21 | 固体光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56168092A JPS5868968A (ja) | 1981-10-21 | 1981-10-21 | 固体光電変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5868968A JPS5868968A (ja) | 1983-04-25 |
| JPH0337743B2 true JPH0337743B2 (nl) | 1991-06-06 |
Family
ID=15861691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56168092A Granted JPS5868968A (ja) | 1981-10-21 | 1981-10-21 | 固体光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5868968A (nl) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2865209B2 (ja) * | 1989-07-20 | 1999-03-08 | 浜松ホトニクス 株式会社 | 固体撮像装置 |
| JP6132283B2 (ja) | 2013-05-17 | 2017-05-24 | Ｎｌｔテクノロジー株式会社 | 増幅回路および増幅回路を用いたイメージセンサ |
| JP6459271B2 (ja) | 2014-07-23 | 2019-01-30 | Ｔｉａｎｍａ Ｊａｐａｎ株式会社 | イメージセンサ及びその駆動方法 |
-
1981
- 1981-10-21 JP JP56168092A patent/JPS5868968A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5868968A (ja) | 1983-04-25 |
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