JPS5868968A - 固体光電変換装置 - Google Patents
固体光電変換装置Info
- Publication number
- JPS5868968A JPS5868968A JP56168092A JP16809281A JPS5868968A JP S5868968 A JPS5868968 A JP S5868968A JP 56168092 A JP56168092 A JP 56168092A JP 16809281 A JP16809281 A JP 16809281A JP S5868968 A JPS5868968 A JP S5868968A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- charge storage
- light
- electric charge
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 43
- 238000003860 storage Methods 0.000 claims abstract description 12
- 238000007599 discharging Methods 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 230000003321 amplification Effects 0.000 claims abstract description 5
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- LFVLUOAHQIVABZ-UHFFFAOYSA-N Iodofenphos Chemical compound COP(=S)(OC)OC1=CC(Cl)=C(I)C=C1Cl LFVLUOAHQIVABZ-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 241000519995 Stachys sylvatica Species 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- -1 boride Chemical class 0.000 description 1
- 210000001217 buttock Anatomy 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56168092A JPS5868968A (ja) | 1981-10-21 | 1981-10-21 | 固体光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56168092A JPS5868968A (ja) | 1981-10-21 | 1981-10-21 | 固体光電変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5868968A true JPS5868968A (ja) | 1983-04-25 |
| JPH0337743B2 JPH0337743B2 (nl) | 1991-06-06 |
Family
ID=15861691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56168092A Granted JPS5868968A (ja) | 1981-10-21 | 1981-10-21 | 固体光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5868968A (nl) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0352462A (ja) * | 1989-07-20 | 1991-03-06 | Hamamatsu Photonics Kk | 固体撮像装置 |
| US9077288B2 (en) | 2013-05-17 | 2015-07-07 | Nlt Technologies, Ltd. | Amplifier circuit and image sensor using amplifier circuit |
| US9698184B2 (en) | 2014-07-23 | 2017-07-04 | Nlt Technologies, Ltd. | Image sensor and driving method thereof |
-
1981
- 1981-10-21 JP JP56168092A patent/JPS5868968A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0352462A (ja) * | 1989-07-20 | 1991-03-06 | Hamamatsu Photonics Kk | 固体撮像装置 |
| US9077288B2 (en) | 2013-05-17 | 2015-07-07 | Nlt Technologies, Ltd. | Amplifier circuit and image sensor using amplifier circuit |
| US9698184B2 (en) | 2014-07-23 | 2017-07-04 | Nlt Technologies, Ltd. | Image sensor and driving method thereof |
| US9865644B2 (en) | 2014-07-23 | 2018-01-09 | Nlt Technologies, Ltd. | Image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0337743B2 (nl) | 1991-06-06 |
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