JPH0334856B2 - - Google Patents
Info
- Publication number
- JPH0334856B2 JPH0334856B2 JP10566785A JP10566785A JPH0334856B2 JP H0334856 B2 JPH0334856 B2 JP H0334856B2 JP 10566785 A JP10566785 A JP 10566785A JP 10566785 A JP10566785 A JP 10566785A JP H0334856 B2 JPH0334856 B2 JP H0334856B2
- Authority
- JP
- Japan
- Prior art keywords
- contact hole
- layer
- wiring layer
- width
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 23
- 230000000903 blocking effect Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10566785A JPS61264738A (ja) | 1985-05-17 | 1985-05-17 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10566785A JPS61264738A (ja) | 1985-05-17 | 1985-05-17 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61264738A JPS61264738A (ja) | 1986-11-22 |
JPH0334856B2 true JPH0334856B2 (enrdf_load_stackoverflow) | 1991-05-24 |
Family
ID=14413787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10566785A Granted JPS61264738A (ja) | 1985-05-17 | 1985-05-17 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61264738A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960001176B1 (ko) * | 1992-12-02 | 1996-01-19 | 현대전자산업주식회사 | 반도체 접속장치 및 그 제조방법 |
-
1985
- 1985-05-17 JP JP10566785A patent/JPS61264738A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61264738A (ja) | 1986-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0136569B1 (ko) | 고집적 반도체 소자의 콘택홀 형성 방법 | |
US5063176A (en) | Fabrication of contact hole using an etch barrier layer | |
KR100188822B1 (ko) | 반도체장치 및 그의 제조방법 | |
US6111319A (en) | Method of forming submicron contacts and vias in an integrated circuit | |
US5461004A (en) | Method for fabricating connection device with reduced area of highly integrated semiconductor device | |
KR950011555B1 (ko) | 반도체 접속장치 및 그 제조방법 | |
US5427980A (en) | Method of making a contact of a semiconductor memory device | |
KR100443064B1 (ko) | 집적 회로내의 소규모 구조 형성을 위한 이미지 리버설 방법 | |
JP2952887B2 (ja) | 半導体装置およびその製造方法 | |
US6194257B1 (en) | Fabrication method of gate electrode having dual gate insulating film | |
JPH06177265A (ja) | 半導体装置およびその製造方法 | |
JPH0334856B2 (enrdf_load_stackoverflow) | ||
JP2771057B2 (ja) | 半導体装置の製造方法 | |
JP2961757B2 (ja) | 半導体装置の製造方法 | |
JP3034538B2 (ja) | 配線構造の形成方法 | |
JPS6120334A (ja) | 半導体装置の製造方法 | |
US5407859A (en) | Field effect transistor with landing pad | |
KR100231847B1 (ko) | 반도체소자 제조방법 | |
KR100265991B1 (ko) | 반도체 장치의 다층 배선간 연결공정 | |
JP3209209B2 (ja) | 容量コンタクトホールを有する半導体装置の製造方法 | |
JP3223904B2 (ja) | 半導体装置の製造方法 | |
KR0172261B1 (ko) | 반도체 소자의 콘택 홀 형성 방법 | |
KR100204910B1 (ko) | 반도체장치의 배선들의 접촉 방법 | |
KR100252756B1 (ko) | 반도체소자의설계기법의변경을통한오버랩마진향상방법 | |
KR0172778B1 (ko) | 반도체 소자 제조 방법 |