JPH0334669B2 - - Google Patents

Info

Publication number
JPH0334669B2
JPH0334669B2 JP56215038A JP21503881A JPH0334669B2 JP H0334669 B2 JPH0334669 B2 JP H0334669B2 JP 56215038 A JP56215038 A JP 56215038A JP 21503881 A JP21503881 A JP 21503881A JP H0334669 B2 JPH0334669 B2 JP H0334669B2
Authority
JP
Japan
Prior art keywords
channel region
thin film
polycrystalline
impurity diffusion
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56215038A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58115864A (ja
Inventor
Takashi Umigami
Bunjiro Tsujama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56215038A priority Critical patent/JPS58115864A/ja
Priority to US06/454,008 priority patent/US4528480A/en
Publication of JPS58115864A publication Critical patent/JPS58115864A/ja
Publication of JPH0334669B2 publication Critical patent/JPH0334669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Bipolar Transistors (AREA)
JP56215038A 1981-12-28 1981-12-28 半導体装置 Granted JPS58115864A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56215038A JPS58115864A (ja) 1981-12-28 1981-12-28 半導体装置
US06/454,008 US4528480A (en) 1981-12-28 1982-12-28 AC Drive type electroluminescent display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56215038A JPS58115864A (ja) 1981-12-28 1981-12-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS58115864A JPS58115864A (ja) 1983-07-09
JPH0334669B2 true JPH0334669B2 (OSRAM) 1991-05-23

Family

ID=16665720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56215038A Granted JPS58115864A (ja) 1981-12-28 1981-12-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS58115864A (OSRAM)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066471A (ja) * 1983-09-21 1985-04-16 Seiko Epson Corp 薄膜トランジスタの製造方法
EP0156528B1 (en) * 1984-03-12 1991-01-30 Xerox Corporation High-voltage thin-film transistor
JPS60251667A (ja) * 1984-05-28 1985-12-12 Seiko Epson Corp 薄膜トランジスタ−
JP2705933B2 (ja) * 1987-09-01 1998-01-28 シチズン時計株式会社 半導体集積回路装置およびその製造方法
JPH0714009B2 (ja) * 1987-10-15 1995-02-15 日本電気株式会社 Ｍｏｓ型半導体記憶回路装置
JPH0442579A (ja) * 1990-06-08 1992-02-13 Seiko Epson Corp 薄膜トランジスタ及び製造方法
JP2646829B2 (ja) * 1990-10-18 1997-08-27 富士ゼロックス株式会社 高耐圧薄膜トランジスタ
JP2999271B2 (ja) * 1990-12-10 2000-01-17 株式会社半導体エネルギー研究所 表示装置
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
KR960001611B1 (ko) * 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
JP2794678B2 (ja) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
USRE36314E (en) * 1991-03-06 1999-09-28 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
JP2873632B2 (ja) * 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
JP2794499B2 (ja) * 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JP2776059B2 (ja) * 1991-06-11 1998-07-16 日本電気株式会社 絶縁ゲート電界効果トランジスタ
US5414442A (en) * 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP2845303B2 (ja) * 1991-08-23 1999-01-13 株式会社 半導体エネルギー研究所 半導体装置とその作製方法
JP3061907B2 (ja) * 1991-10-01 2000-07-10 日本電気株式会社 半導体装置及びその製造方法
US5485019A (en) 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6624450B1 (en) * 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
TW223178B (en) * 1992-03-27 1994-05-01 Semiconductor Energy Res Co Ltd Semiconductor device and its production method
TW425637B (en) 1993-01-18 2001-03-11 Semiconductor Energy Lab Method of fabricating mis semiconductor device
KR100484624B1 (ko) * 2002-12-12 2005-04-22 주식회사 캄코 직부식 커넥터가 장착된 콘덴서용 쿨링팬 모터
KR100560470B1 (ko) * 2003-11-24 2006-03-13 삼성에스디아이 주식회사 다이오드 접속된 트랜지스터의 제조 방법 및 이를 이용한화상 표시 장치

Also Published As

Publication number Publication date
JPS58115864A (ja) 1983-07-09

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