JPH0334055B2 - - Google Patents
Info
- Publication number
- JPH0334055B2 JPH0334055B2 JP58076203A JP7620383A JPH0334055B2 JP H0334055 B2 JPH0334055 B2 JP H0334055B2 JP 58076203 A JP58076203 A JP 58076203A JP 7620383 A JP7620383 A JP 7620383A JP H0334055 B2 JPH0334055 B2 JP H0334055B2
- Authority
- JP
- Japan
- Prior art keywords
- seconds
- ultraviolet rays
- resist
- acid ester
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229940117955 isoamyl acetate Drugs 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- -1 naphthoquinonediazide sulfonic acid ester Chemical class 0.000 claims description 4
- 229920003986 novolac Polymers 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7620383A JPS59202462A (ja) | 1983-05-02 | 1983-05-02 | ネガ型レジストのパタ−ン形成方法 |
| US06/594,481 US4609615A (en) | 1983-03-31 | 1984-03-27 | Process for forming pattern with negative resist using quinone diazide compound |
| EP84302145A EP0124265B1 (en) | 1983-03-31 | 1984-03-29 | Process for forming pattern with negative resist |
| DE8484302145T DE3466741D1 (en) | 1983-03-31 | 1984-03-29 | Process for forming pattern with negative resist |
| CA000450963A CA1214679A (en) | 1983-03-31 | 1984-03-30 | Process for forming pattern with negative resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7620383A JPS59202462A (ja) | 1983-05-02 | 1983-05-02 | ネガ型レジストのパタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59202462A JPS59202462A (ja) | 1984-11-16 |
| JPH0334055B2 true JPH0334055B2 (ro) | 1991-05-21 |
Family
ID=13598596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7620383A Granted JPS59202462A (ja) | 1983-03-31 | 1983-05-02 | ネガ型レジストのパタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59202462A (ro) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045243A (ja) * | 1983-08-23 | 1985-03-11 | Oki Electric Ind Co Ltd | レジストパタ−ンの形成方法 |
| JPS61241745A (ja) * | 1985-04-18 | 1986-10-28 | Oki Electric Ind Co Ltd | ネガ型フオトレジスト組成物及びレジストパタ−ン形成方法 |
| ATE42419T1 (de) * | 1985-08-12 | 1989-05-15 | Hoechst Celanese Corp | Verfahren zur herstellung negativer bilder aus einem positiv arbeitenden photoresist. |
| JPH01158451A (ja) * | 1987-09-25 | 1989-06-21 | Toray Ind Inc | 水なし平版印刷板の製版方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49127615A (ro) * | 1973-04-07 | 1974-12-06 | ||
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
-
1983
- 1983-05-02 JP JP7620383A patent/JPS59202462A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49127615A (ro) * | 1973-04-07 | 1974-12-06 | ||
| JPS5692536A (en) * | 1979-12-27 | 1981-07-27 | Fujitsu Ltd | Pattern formation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59202462A (ja) | 1984-11-16 |
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