JPH0334054B2 - - Google Patents

Info

Publication number
JPH0334054B2
JPH0334054B2 JP58053674A JP5367483A JPH0334054B2 JP H0334054 B2 JPH0334054 B2 JP H0334054B2 JP 58053674 A JP58053674 A JP 58053674A JP 5367483 A JP5367483 A JP 5367483A JP H0334054 B2 JPH0334054 B2 JP H0334054B2
Authority
JP
Japan
Prior art keywords
resist
cracks
pattern
water
sulfonic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58053674A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59181536A (ja
Inventor
Yoshio Yamashita
Takaharu Kawazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58053674A priority Critical patent/JPS59181536A/ja
Priority to US06/574,363 priority patent/US4600684A/en
Publication of JPS59181536A publication Critical patent/JPS59181536A/ja
Publication of JPH0334054B2 publication Critical patent/JPH0334054B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58053674A 1983-02-10 1983-03-31 レジストパタ−ンの形成方法 Granted JPS59181536A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58053674A JPS59181536A (ja) 1983-03-31 1983-03-31 レジストパタ−ンの形成方法
US06/574,363 US4600684A (en) 1983-02-10 1984-01-27 Process for forming a negative resist using high energy beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58053674A JPS59181536A (ja) 1983-03-31 1983-03-31 レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS59181536A JPS59181536A (ja) 1984-10-16
JPH0334054B2 true JPH0334054B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-05-21

Family

ID=12949370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58053674A Granted JPS59181536A (ja) 1983-02-10 1983-03-31 レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS59181536A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045243A (ja) * 1983-08-23 1985-03-11 Oki Electric Ind Co Ltd レジストパタ−ンの形成方法
JPH01177539A (ja) * 1988-01-07 1989-07-13 Matsushita Electron Corp レジストの現像方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49127615A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-04-07 1974-12-06
US4078098A (en) * 1974-05-28 1978-03-07 International Business Machines Corporation High energy radiation exposed positive resist mask process
JPS5151939A (ja) * 1974-10-31 1976-05-07 Canon Kk Saisenpataanyohotorejisutogenzoeki

Also Published As

Publication number Publication date
JPS59181536A (ja) 1984-10-16

Similar Documents

Publication Publication Date Title
KR910007245B1 (ko) 양성 포토레지스트
US8552538B2 (en) Methods of eliminating pattern collapse on photoresist patterns
JP2824350B2 (ja) デバイスの製造方法
EP0519297B1 (de) Strahlungsempfindliches Gemisch, das als Bindemittel neue Polymere mit Einheiten aus Amiden von alpha,beta-ungesättigten Carbonsäuren enthält
CN1097601C (zh) 制备具有很低金属离子含量的光刻胶组合物的方法
JPH06266106A (ja) 放射線感受性レジスト組成物及びその使用
US5384220A (en) Production of photolithographic structures
KR20010015280A (ko) 포토레지스트패턴의 형성방법
US6251569B1 (en) Forming a pattern of a negative photoresist
US6218090B1 (en) Method of creating controlled discontinuity between photoresist and substrate for improving metal lift off
JPS6045238A (ja) ポジ型レジスト材料とその製造方法
JPH07140668A (ja) オーバーコート材料
JPH0449703B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0334054B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH02248952A (ja) 感光性組成物
WO2016121535A1 (ja) 感放射線性又は感活性光線性組成物、並びに、それを用いた膜、マスクブランクス、レジストパターン形成方法、及び電子デバイスの製造方法
JP3228832B2 (ja) パターン形成方法
JPS6248211B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2001318472A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS60107644A (ja) 現像しうる水性ネガレジスト組成物
JP3786168B2 (ja) レジスト材料及びパターン形成方法
WO2019145311A1 (en) Photoresist remover compositions
JPH0356469B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH06148899A (ja) レジストパターン形成方法
JPS6145376B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)